JP2009532862A5 - - Google Patents

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Publication number
JP2009532862A5
JP2009532862A5 JP2009502820A JP2009502820A JP2009532862A5 JP 2009532862 A5 JP2009532862 A5 JP 2009532862A5 JP 2009502820 A JP2009502820 A JP 2009502820A JP 2009502820 A JP2009502820 A JP 2009502820A JP 2009532862 A5 JP2009532862 A5 JP 2009532862A5
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Japan
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target
periodic
features
disambiguation
layer
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JP2009502820A
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Japanese (ja)
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JP2009532862A (ja
JP5616627B2 (ja
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Priority claimed from US11/525,320 external-priority patent/US7616313B2/en
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JP2009502820A 2006-03-31 2007-03-08 ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法 Active JP5616627B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US78800506P 2006-03-31 2006-03-31
US60/788,005 2006-03-31
US11/525,320 2006-09-21
US11/525,320 US7616313B2 (en) 2006-03-31 2006-09-21 Apparatus and methods for detecting overlay errors using scatterometry
PCT/US2007/006031 WO2007126559A2 (en) 2006-03-31 2007-03-08 Apparatus and method for detecting overlay errors using scatterometry

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013201126A Division JP2014030047A (ja) 2006-03-31 2013-09-27 スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法

Publications (3)

Publication Number Publication Date
JP2009532862A JP2009532862A (ja) 2009-09-10
JP2009532862A5 true JP2009532862A5 (https=) 2010-06-03
JP5616627B2 JP5616627B2 (ja) 2014-10-29

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ID=38558396

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JP2009502820A Active JP5616627B2 (ja) 2006-03-31 2007-03-08 ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法
JP2013201126A Pending JP2014030047A (ja) 2006-03-31 2013-09-27 スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法

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JP2013201126A Pending JP2014030047A (ja) 2006-03-31 2013-09-27 スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法

Country Status (3)

Country Link
US (1) US7616313B2 (https=)
JP (2) JP5616627B2 (https=)
WO (1) WO2007126559A2 (https=)

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US8004679B2 (en) * 2008-05-09 2011-08-23 Kla-Tencor Corporation Target design and methods for scatterometry overlay determination
TWI364784B (en) * 2008-06-13 2012-05-21 Ind Tech Res Inst Method for designing overlay targets and method and system for measuring overlay error using the same
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
TWI539250B (zh) * 2011-03-15 2016-06-21 Orc Mfg Co Ltd A registration device and an exposure device having a registration device
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
CN103748515A (zh) * 2011-08-23 2014-04-23 Asml荷兰有限公司 量测方法和设备以及器件制造方法
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US9535338B2 (en) 2012-05-29 2017-01-03 Asml Netherlands B.V. Metrology method and apparatus, substrate, lithographic system and device manufacturing method
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KR102015934B1 (ko) * 2012-07-05 2019-08-29 에이에스엠엘 네델란즈 비.브이. 리소그래피를 위한 계측법
TWI598972B (zh) 2012-11-09 2017-09-11 克萊譚克公司 減少散射量測疊對量測技術中演算法之不準確
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
JP2015095631A (ja) * 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． 半導体装置
WO2015124397A1 (en) 2014-02-21 2015-08-27 Asml Netherlands B.V. Optimization of target arrangement and associated target
US10415963B2 (en) 2014-04-09 2019-09-17 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
WO2015157464A1 (en) * 2014-04-09 2015-10-15 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
US10352876B2 (en) 2014-05-09 2019-07-16 KLA—Tencor Corporation Signal response metrology for scatterometry based overlay measurements
JP6421237B2 (ja) * 2014-08-29 2018-11-07 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジー方法、ターゲット、及び基板
WO2016083076A1 (en) * 2014-11-26 2016-06-02 Asml Netherlands B.V. Metrology method, computer product and system
KR20160066448A (ko) 2014-12-02 2016-06-10 삼성전자주식회사 표면 검사 방법
KR20160121206A (ko) 2015-04-10 2016-10-19 삼성전자주식회사 오버레이 에러의 검출 방법 및 이를 이용한 반도체 장치의 제조 방법
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
WO2017178220A1 (en) 2016-04-11 2017-10-19 Asml Netherlands B.V. Metrology target, method and apparatus, target design method, computer program and lithographic system
US10527952B2 (en) 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
WO2018081147A1 (en) * 2016-10-25 2018-05-03 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
JP7179742B2 (ja) * 2017-02-10 2022-11-29 ケーエルエー コーポレイション 散乱計測オーバーレイターゲット及び方法
US10204867B1 (en) * 2017-08-31 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor metrology target and manufacturing method thereof
US10990022B2 (en) * 2018-12-20 2021-04-27 Kla Corporation Field-to-field corrections using overlay targets
US11874102B2 (en) * 2019-12-30 2024-01-16 Kla Corporation Thick photo resist layer metrology target
KR102630496B1 (ko) * 2020-04-15 2024-01-29 케이엘에이 코포레이션 반도체 디바이스의 오정합을 측정하는 데 유용한 디바이스 스케일 피쳐를 갖는 오정합 타겟
US12276921B2 (en) * 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
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