JP5616627B2 - ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法 - Google Patents

ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法 Download PDF

Info

Publication number
JP5616627B2
JP5616627B2 JP2009502820A JP2009502820A JP5616627B2 JP 5616627 B2 JP5616627 B2 JP 5616627B2 JP 2009502820 A JP2009502820 A JP 2009502820A JP 2009502820 A JP2009502820 A JP 2009502820A JP 5616627 B2 JP5616627 B2 JP 5616627B2
Authority
JP
Japan
Prior art keywords
target
periodic
features
target cells
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009502820A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009532862A5 (https=
JP2009532862A (ja
Inventor
カンデル・ダニエル
ミーハー・ウォルター・ディ．
ゴロヴァネブスキイ・ボリス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2009532862A publication Critical patent/JP2009532862A/ja
Publication of JP2009532862A5 publication Critical patent/JP2009532862A5/ja
Application granted granted Critical
Publication of JP5616627B2 publication Critical patent/JP5616627B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2009502820A 2006-03-31 2007-03-08 ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法 Active JP5616627B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US78800506P 2006-03-31 2006-03-31
US60/788,005 2006-03-31
US11/525,320 US7616313B2 (en) 2006-03-31 2006-09-21 Apparatus and methods for detecting overlay errors using scatterometry
US11/525,320 2006-09-21
PCT/US2007/006031 WO2007126559A2 (en) 2006-03-31 2007-03-08 Apparatus and method for detecting overlay errors using scatterometry

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013201126A Division JP2014030047A (ja) 2006-03-31 2013-09-27 スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法

Publications (3)

Publication Number Publication Date
JP2009532862A JP2009532862A (ja) 2009-09-10
JP2009532862A5 JP2009532862A5 (https=) 2010-06-03
JP5616627B2 true JP5616627B2 (ja) 2014-10-29

Family

ID=38558396

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009502820A Active JP5616627B2 (ja) 2006-03-31 2007-03-08 ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法
JP2013201126A Pending JP2014030047A (ja) 2006-03-31 2013-09-27 スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013201126A Pending JP2014030047A (ja) 2006-03-31 2013-09-27 スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法

Country Status (3)

Country Link
US (1) US7616313B2 (https=)
JP (2) JP5616627B2 (https=)
WO (1) WO2007126559A2 (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4839127B2 (ja) * 2006-05-10 2011-12-21 株式会社日立ハイテクノロジーズ 校正用標準部材及びこれを用いた校正方法および電子ビーム装置
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7808638B2 (en) * 2007-07-13 2010-10-05 Kla-Tencor Corporation Scatterometry target and method
US8004679B2 (en) * 2008-05-09 2011-08-23 Kla-Tencor Corporation Target design and methods for scatterometry overlay determination
TWI364784B (en) * 2008-06-13 2012-05-21 Ind Tech Res Inst Method for designing overlay targets and method and system for measuring overlay error using the same
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
TWI539250B (zh) * 2011-03-15 2016-06-21 Orc Mfg Co Ltd A registration device and an exposure device having a registration device
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
CN103748515A (zh) * 2011-08-23 2014-04-23 Asml荷兰有限公司 量测方法和设备以及器件制造方法
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
NL2010734A (en) 2012-05-29 2013-12-02 Asml Netherlands Bv Metrology method and apparatus, substrate, lithographic system and device manufacturing method.
KR102102007B1 (ko) 2012-06-26 2020-04-20 케이엘에이 코포레이션 근접장 계측
US9714827B2 (en) * 2012-07-05 2017-07-25 Asml Netherlands B.V. Metrology method and apparatus, lithographic system, device manufacturing method and substrate
TWI598972B (zh) 2012-11-09 2017-09-11 克萊譚克公司 減少散射量測疊對量測技術中演算法之不準確
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
JP2015095631A (ja) * 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． 半導体装置
CN106030414B (zh) * 2014-02-21 2018-10-09 Asml荷兰有限公司 目标布置的优化和相关的目标
WO2015157464A1 (en) * 2014-04-09 2015-10-15 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
US10415963B2 (en) 2014-04-09 2019-09-17 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
US10352876B2 (en) 2014-05-09 2019-07-16 KLA—Tencor Corporation Signal response metrology for scatterometry based overlay measurements
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
IL290735B2 (en) * 2014-11-26 2023-03-01 Asml Netherlands Bv Metrological method, computer product and system
KR20160066448A (ko) 2014-12-02 2016-06-10 삼성전자주식회사 표면 검사 방법
KR20160121206A (ko) 2015-04-10 2016-10-19 삼성전자주식회사 오버레이 에러의 검출 방법 및 이를 이용한 반도체 장치의 제조 방법
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
WO2017178220A1 (en) 2016-04-11 2017-10-19 Asml Netherlands B.V. Metrology target, method and apparatus, target design method, computer program and lithographic system
WO2018081147A1 (en) * 2016-10-25 2018-05-03 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
US10527952B2 (en) 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
JP7179742B2 (ja) * 2017-02-10 2022-11-29 ケーエルエー コーポレイション 散乱計測オーバーレイターゲット及び方法
US10204867B1 (en) * 2017-08-31 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor metrology target and manufacturing method thereof
US10990022B2 (en) * 2018-12-20 2021-04-27 Kla Corporation Field-to-field corrections using overlay targets
US11874102B2 (en) * 2019-12-30 2024-01-16 Kla Corporation Thick photo resist layer metrology target
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US12276921B2 (en) * 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
US12044982B2 (en) * 2021-12-02 2024-07-23 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements
US12579628B2 (en) * 2022-08-22 2026-03-17 Applied Materials Israel Ltd. Overlay measurement between layers of a semiconductor specimen based on center of symmetry (COS) localization
US20240337952A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for determining overlay measurement of a scanning target

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923041A (en) * 1995-02-03 1999-07-13 Us Commerce Overlay target and measurement procedure to enable self-correction for wafer-induced tool-induced shift by imaging sensor means
JP2003532306A (ja) 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
DE10142317B4 (de) * 2001-08-30 2010-07-01 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung zur Bestimmung eines Überlagerungsfehlers und kritischer Dimensionen in einer Halbleiterstruktur mittels Streuungsmessung
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
TWI227814B (en) * 2002-09-20 2005-02-11 Asml Netherlands Bv Alignment system and methods for lithographic systems using at least two wavelengths
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
WO2004053426A1 (en) * 2002-12-05 2004-06-24 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7230704B2 (en) * 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
JP4734261B2 (ja) * 2004-02-18 2011-07-27 ケーエルエー−テンカー コーポレイション 連続変化するオフセットマークと、オーバレイ決定方法
US20060012779A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379184B2 (en) * 2004-10-18 2008-05-27 Nanometrics Incorporated Overlay measurement target

Also Published As

Publication number Publication date
US7616313B2 (en) 2009-11-10
WO2007126559A3 (en) 2007-12-21
JP2014030047A (ja) 2014-02-13
JP2009532862A (ja) 2009-09-10
WO2007126559A2 (en) 2007-11-08
US20070229829A1 (en) 2007-10-04

Similar Documents

Publication Publication Date Title
JP5616627B2 (ja) ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法
JP6735884B2 (ja) ターゲットのパラメータを決定する方法及び装置
TWI748061B (zh) 基於散射術之度量系統及方法
US8913237B2 (en) Device-like scatterometry overlay targets
KR102221063B1 (ko) 스캐터로메트리 기반 오버레이 측정들을 위한 신호 응답 계측
JP6723269B2 (ja) 焦点感応オーバーレイターゲットを使用する焦点決定のためのシステムおよび方法
JP6858192B2 (ja) 拡張赤外分光エリプソメトリシステム及び方法
KR101906289B1 (ko) 리소그래피를 수반하는 제조 공정을 위한 공정 파라미터의 측정
US7230705B1 (en) Alignment target with designed in offset
JP4196319B2 (ja) 重ね合わせ測定方法
US20050173634A1 (en) Optical metrology target design for simultaneous measurement of multiple periodic structures
KR101257954B1 (ko) 특성 시그니처 매칭을 이용한 스케터로메트리 방법
KR20170066524A (ko) 검증 계측 타겟 및 그 설계
JP2007505322A (ja) 線プロファイル非対称性測定
CN103454861B (zh) 一种套刻测量的标记和方法
CN103307997A (zh) 一种角分辨散射测量装置及其测量方法
Quintanilha et al. Critical dimension measurements using a 193 nm scatterfield microscope

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111115

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120208

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120807

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121105

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130206

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130927

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20131007

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131029

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140129

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140428

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140801

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140826

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140912

R150 Certificate of patent or registration of utility model

Ref document number: 5616627

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250