JP2009531831A5 - - Google Patents

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Publication number
JP2009531831A5
JP2009531831A5 JP2009502884A JP2009502884A JP2009531831A5 JP 2009531831 A5 JP2009531831 A5 JP 2009531831A5 JP 2009502884 A JP2009502884 A JP 2009502884A JP 2009502884 A JP2009502884 A JP 2009502884A JP 2009531831 A5 JP2009531831 A5 JP 2009531831A5
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JP
Japan
Prior art keywords
energy
frequency
threshold
scanning frequency
implantation apparatus
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JP2009502884A
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English (en)
Japanese (ja)
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JP2009531831A (ja
JP5075193B2 (ja
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Priority claimed from US11/390,518 external-priority patent/US7358510B2/en
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Publication of JP2009531831A publication Critical patent/JP2009531831A/ja
Publication of JP2009531831A5 publication Critical patent/JP2009531831A5/ja
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Publication of JP5075193B2 publication Critical patent/JP5075193B2/ja
Active legal-status Critical Current
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JP2009502884A 2006-03-27 2007-03-23 イオン注入装置およびその方法 Active JP5075193B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/390,518 2006-03-27
US11/390,518 US7358510B2 (en) 2006-03-27 2006-03-27 Ion implanter with variable scan frequency
PCT/US2007/007224 WO2007111991A2 (en) 2006-03-27 2007-03-23 Ion implanter with variable scan frequency

Publications (3)

Publication Number Publication Date
JP2009531831A JP2009531831A (ja) 2009-09-03
JP2009531831A5 true JP2009531831A5 (cg-RX-API-DMAC7.html) 2010-05-13
JP5075193B2 JP5075193B2 (ja) 2012-11-14

Family

ID=38532387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009502884A Active JP5075193B2 (ja) 2006-03-27 2007-03-23 イオン注入装置およびその方法

Country Status (6)

Country Link
US (1) US7358510B2 (cg-RX-API-DMAC7.html)
JP (1) JP5075193B2 (cg-RX-API-DMAC7.html)
KR (1) KR101440413B1 (cg-RX-API-DMAC7.html)
CN (1) CN101410929B (cg-RX-API-DMAC7.html)
TW (1) TWI413999B (cg-RX-API-DMAC7.html)
WO (1) WO2007111991A2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法
US9490185B2 (en) 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
EP2779205B1 (en) * 2013-03-15 2017-10-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High throughput scan deflector and method of manufacturing thereof
US10483086B2 (en) * 2014-12-26 2019-11-19 Axcelis Technologies, Inc. Beam profiling speed enhancement for scanned beam implanters
JP6689544B2 (ja) * 2016-09-06 2020-04-28 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9905396B1 (en) * 2016-10-18 2018-02-27 Varian Semiconductor Equipment Associates, Inc. Curved post scan electrode
US10770261B2 (en) * 2017-12-14 2020-09-08 Varian Semiconductor Equipment Associates, Inc. System and method to monitor glitch energy
WO2020073218A1 (en) * 2018-10-10 2020-04-16 Applied Materials, Inc. Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US5418378A (en) * 1994-03-14 1995-05-23 Advanced Micro Devices Ion implant device with modulated scan output
JPH0896744A (ja) * 1994-09-27 1996-04-12 Hitachi Ltd イオン注入装置
JPH08167398A (ja) * 1994-12-02 1996-06-25 Hitachi Ltd イオン注入装置
US6075249A (en) * 1998-06-19 2000-06-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanning and focusing an ion beam
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
JP3341749B2 (ja) 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
WO2002025692A1 (en) 2000-09-20 2002-03-28 Fei Company Real time monitoring for simultaneous imaging and exposure in charged particle beam systems
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US6710359B2 (en) * 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
JP3892360B2 (ja) 2002-07-30 2007-03-14 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US6992309B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Ion beam measurement systems and methods for ion implant dose and uniformity control

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