JP2009530818A - 薄シリコンまたはゲルマニウムシートおよび薄型シート製太陽電池 - Google Patents

薄シリコンまたはゲルマニウムシートおよび薄型シート製太陽電池 Download PDF

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JP2009530818A
JP2009530818A JP2009500444A JP2009500444A JP2009530818A JP 2009530818 A JP2009530818 A JP 2009530818A JP 2009500444 A JP2009500444 A JP 2009500444A JP 2009500444 A JP2009500444 A JP 2009500444A JP 2009530818 A JP2009530818 A JP 2009530818A
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substrate
silicon
layer
sheet
deposition
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JP2009530818A5 (https=
Inventor
ヒエスマイアー，ヘンリー
モッソ，ロナルド，ジェイ．
リンチ，ロバート，ビー．
チルボル，シブクマー
マクガバーン，ウィリアム，イー．
ホーン，クレイグ，アール．
ソラヤパン，ナラヤン
コーネル，ロナルド，エム．
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Nanogram Corp
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Nanogram Corp
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Publication of JP2009530818A publication Critical patent/JP2009530818A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2009500444A 2006-03-13 2007-03-13 薄シリコンまたはゲルマニウムシートおよび薄型シート製太陽電池 Pending JP2009530818A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78211506P 2006-03-13 2006-03-13
PCT/US2007/006357 WO2007106502A2 (en) 2006-03-13 2007-03-13 Thin silicon or germanium sheets and photovoltaics formed from thin sheets

Publications (2)

Publication Number Publication Date
JP2009530818A true JP2009530818A (ja) 2009-08-27
JP2009530818A5 JP2009530818A5 (https=) 2010-04-30

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JP2009500444A Pending JP2009530818A (ja) 2006-03-13 2007-03-13 薄シリコンまたはゲルマニウムシートおよび薄型シート製太陽電池

Country Status (6)

Country Link
US (2) US20070212510A1 (https=)
EP (1) EP1997126A2 (https=)
JP (1) JP2009530818A (https=)
KR (1) KR20080109778A (https=)
CN (1) CN101443888B (https=)
WO (1) WO2007106502A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015515747A (ja) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ めっきされたコンタクトを有する太陽電池の製造方法
JP2016063212A (ja) * 2014-09-19 2016-04-25 ハマド・ムサバハー・アハメド・サイフ・アルテネイジＨａｍａｄ Ｍｕｓａｂｅｈ Ａｈｍｅｄ Ｓａｉｆ Ａｌｔｅｎｅｉｊｉ ダイナミック光起電力モジュール及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US20080210290A1 (en) * 2006-04-14 2008-09-04 Dau Wu Plasma inside vapor deposition apparatus and method for making multi-junction silicon thin film solar cell modules and panels
WO2008079242A1 (en) * 2006-12-19 2008-07-03 Nanogram Corporation Hollow silica nanoparticles as well as synthesis processes and applications thereof
US8853527B2 (en) * 2007-02-16 2014-10-07 Nanogram Corporation Solar cell structures, photovoltaic panels and corresponding processes
US20090017292A1 (en) * 2007-06-15 2009-01-15 Henry Hieslmair Reactive flow deposition and synthesis of inorganic foils
US8771419B2 (en) * 2007-10-05 2014-07-08 Solopower Systems, Inc. Roll to roll evaporation tool for solar absorber precursor formation
KR20100113588A (ko) * 2008-01-23 2010-10-21 솔베이 플루오르 게엠베하 태양전지의 제조 방법
US20090191348A1 (en) * 2008-01-25 2009-07-30 Henry Hieslmair Zone melt recrystallization for inorganic films
US20090208725A1 (en) * 2008-01-25 2009-08-20 Bailey Robert J Layer transfer for large area inorganic foils
WO2009142187A1 (ja) * 2008-05-22 2009-11-26 株式会社カネカ 薄膜光電変換装置とその製造方法
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
TWI421214B (zh) * 2008-12-03 2014-01-01 財團法人工業技術研究院 Ibiiiavia族非晶相化合物及應用於薄膜太陽能電池之ibiiiavia族非晶相前驅物的製造方法
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US7820532B2 (en) 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US20100294352A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Metal patterning for electrically conductive structures based on alloy formation
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
WO2011035234A1 (en) * 2009-09-18 2011-03-24 The University Of Toledo Method of producing a flexible photovoltaic cell using a flexible polymer-fixture laminate
TWI523246B (zh) * 2009-09-21 2016-02-21 納克公司 用於薄膜太陽能電池形成之矽墨水、對應方法及太陽能電池結構
US8691694B2 (en) * 2009-12-22 2014-04-08 Henry Hieslmair Solderless back contact solar cell module assembly process
US20110192461A1 (en) * 2010-01-20 2011-08-11 Integrated Photovoltaic, Inc. Zone Melt Recrystallization of layers of polycrystalline silicon
US20110195540A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
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MX2012013614A (es) 2010-05-26 2013-03-20 Univ Toledo Estructuras fotovoltaicas que tienen una capa de interfaz de difraccion de luz y metodos para fabricar las mismas.
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
JP2012054364A (ja) * 2010-08-31 2012-03-15 Nobuyuki Akiyama シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
US20190013430A1 (en) * 2010-10-28 2019-01-10 Solar Junction Corporation Optoelectronic devices including dilute nitride
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
DE102011015283B4 (de) * 2011-03-28 2013-03-07 Bayerisches Zentrum für Angewandte Energieforschung e.V. Herstellung eines Halbleiter-Bauelements durch Laser-unterstütztes Bonden und damit hergestelltes Halbleiter-Bauelement
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
US10679883B2 (en) * 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
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US9812592B2 (en) 2012-12-21 2017-11-07 Sunpower Corporation Metal-foil-assisted fabrication of thin-silicon solar cell
KR101958056B1 (ko) 2013-05-24 2019-03-13 데이진 가부시키가이샤 고점도 알콜 용매 및 실리콘/게르마늄계 나노입자를 포함하는 인쇄용 잉크
SG11201606353TA (en) 2014-02-05 2016-09-29 Solar Junction Corp Monolithic multijunction power converter
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
US11247005B2 (en) * 2018-09-26 2022-02-15 Rai Strategic Holdings, Inc. Aerosol delivery device with conductive inserts
KR20210146802A (ko) * 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
CN112038422B (zh) * 2020-08-31 2022-05-27 常州时创能源股份有限公司 彩色太阳能电池用叠层膜及制备方法和彩色太阳能电池
CN115165109A (zh) 2021-03-18 2022-10-11 Asm Ip私人控股有限公司 具有灯排对准的晶片远边缘温度测量系统
KR20220130609A (ko) 2021-03-18 2022-09-27 에이에스엠 아이피 홀딩 비.브이. 막 증착 동안 기판 온도를 제어하기 위한 이중 고온계 시스템
TW202300686A (zh) * 2021-03-18 2023-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成半導體裝置結構之方法、半導體處理系統、及半導體裝置結構
WO2025038847A2 (en) * 2023-08-15 2025-02-20 Rutgers, The State University Of New Jersey Proximity doping for silicon structures
WO2025155533A1 (en) * 2024-01-16 2025-07-24 University Of Washington Gas quenching technique for controllable crystal growth mechanisms
CN119456643B (zh) * 2024-10-28 2025-10-31 四川大学 一种基于干冰类冷冻剂低温高效分离光伏组件的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134782A (ja) * 2000-10-30 2002-05-10 Canon Inc 単結晶基体、それを用いた光電変換装置、放射線撮像装置、画像表示装置、太陽電池モジュール及び単結晶基体の製造方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4332838A (en) * 1980-09-24 1982-06-01 Wegrzyn James E Particulate thin film fabrication process
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4594229A (en) * 1981-02-25 1986-06-10 Emanuel M. Sachs Apparatus for melt growth of crystalline semiconductor sheets
US4469552A (en) * 1982-04-23 1984-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process and apparatus for growing a crystal ribbon
US4638110A (en) * 1985-06-13 1987-01-20 Illuminated Data, Inc. Methods and apparatus relating to photovoltaic semiconductor devices
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
US7115902B1 (en) * 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
US5266125A (en) * 1992-05-12 1993-11-30 Astropower, Inc. Interconnected silicon film solar cell array
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
TW374196B (en) * 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
JPH10112549A (ja) * 1996-10-08 1998-04-28 Canon Inc 太陽電池モジュール
ATE261612T1 (de) * 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
US5958348A (en) * 1997-02-28 1999-09-28 Nanogram Corporation Efficient production of particles by chemical reaction
WO1998039804A1 (en) * 1997-03-04 1998-09-11 Astropower, Inc. Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
JP3492142B2 (ja) * 1997-03-27 2004-02-03 キヤノン株式会社 半導体基材の製造方法
WO1999001893A2 (de) * 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur herstellung von schichtartigen gebilden auf einem substrat, substrat sowie mittels des verfahrens hergestellte halbleiterbauelemente
US6952504B2 (en) * 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
US6849334B2 (en) * 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
US6788866B2 (en) * 2001-08-17 2004-09-07 Nanogram Corporation Layer materials and planar optical devices
JPH1154773A (ja) * 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
US6211455B1 (en) * 1998-07-02 2001-04-03 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
US6183880B1 (en) * 1998-08-07 2001-02-06 Mitsui Mining & Smelting Co., Ltd. Composite foil of aluminum and copper
US6402839B1 (en) * 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US6090199A (en) * 1999-05-03 2000-07-18 Evergreen Solar, Inc. Continuous melt replenishment for crystal growth
GB9929614D0 (en) * 1999-12-15 2000-02-09 Koninkl Philips Electronics Nv Method of manufacturing a transistor
JP4036616B2 (ja) * 2000-01-31 2008-01-23 三洋電機株式会社 太陽電池モジュール
KR20040012671A (ko) * 2000-10-17 2004-02-11 네오포토닉스 코포레이션 반응성 증착에 의한 코팅 형성
US6916740B2 (en) * 2001-06-25 2005-07-12 Hewlett-Packard Development Company, L.P. Method of forming smooth polycrystalline silicon electrodes for molecular electronic devices
US6719848B2 (en) * 2001-08-16 2004-04-13 First Solar, Llc Chemical vapor deposition system
JP4693351B2 (ja) * 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7521097B2 (en) * 2003-06-06 2009-04-21 Nanogram Corporation Reactive deposition for electrochemical cell production
US20050037278A1 (en) * 2003-08-15 2005-02-17 Jun Koishikawa Photosensitive thick-film paste materials for forming light-transmitting electromagnetic shields, light-transmitting electromagnetic shields formed using the same, and method of manufacture thereof
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7491431B2 (en) * 2004-12-20 2009-02-17 Nanogram Corporation Dense coating formation by reactive deposition
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
KR20100039386A (ko) * 2007-07-27 2010-04-15 에버그린 솔라, 인크. 웨이퍼/리본 결정 방법 및 장치
CA2697403A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon crystal string for increasing wafer yield
JP2011507275A (ja) * 2007-12-11 2011-03-03 エバーグリーン ソーラー， インコーポレイテッド 微細なフィンガーを有する光起電力性パネルおよび光起電力性電池ならびにこれらの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134782A (ja) * 2000-10-30 2002-05-10 Canon Inc 単結晶基体、それを用いた光電変換装置、放射線撮像装置、画像表示装置、太陽電池モジュール及び単結晶基体の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015515747A (ja) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ めっきされたコンタクトを有する太陽電池の製造方法
JP2016063212A (ja) * 2014-09-19 2016-04-25 ハマド・ムサバハー・アハメド・サイフ・アルテネイジＨａｍａｄ Ｍｕｓａｂｅｈ Ａｈｍｅｄ Ｓａｉｆ Ａｌｔｅｎｅｉｊｉ ダイナミック光起電力モジュール及びその製造方法

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