JP2009521098A - 歪み補償の準安定化合物ベースヘテロ接合バイポーラトランジスタ - Google Patents
歪み補償の準安定化合物ベースヘテロ接合バイポーラトランジスタ Download PDFInfo
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- JP2009521098A JP2009521098A JP2008540379A JP2008540379A JP2009521098A JP 2009521098 A JP2009521098 A JP 2009521098A JP 2008540379 A JP2008540379 A JP 2008540379A JP 2008540379 A JP2008540379 A JP 2008540379A JP 2009521098 A JP2009521098 A JP 2009521098A
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- compound semiconductor
- strain
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- semiconductor material
- sige
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 73
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000011065 in-situ storage Methods 0.000 claims abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 229910052799 carbon Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- 230000007547 defect Effects 0.000 claims description 12
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 6
- 230000006798 recombination Effects 0.000 claims description 6
- 238000005215 recombination Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 15
- 239000010409 thin film Substances 0.000 abstract description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000006467 substitution reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 44
- 229910052710 silicon Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- 241000894007 species Species 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 2
- 244000046052 Phaseolus vulgaris Species 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229940000488 arsenic acid Drugs 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- -1 respectively Chemical compound 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/268,154 US20070102834A1 (en) | 2005-11-07 | 2005-11-07 | Strain-compensated metastable compound base heterojunction bipolar transistor |
| PCT/US2006/060555 WO2007056708A2 (en) | 2005-11-07 | 2006-11-03 | A strain-compensated metastable compound base heterojunction bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2009521098A true JP2009521098A (ja) | 2009-05-28 |
Family
ID=38002926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008540379A Withdrawn JP2009521098A (ja) | 2005-11-07 | 2006-11-03 | 歪み補償の準安定化合物ベースヘテロ接合バイポーラトランジスタ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20070102834A1 (zh) |
| EP (1) | EP1949420A2 (zh) |
| JP (1) | JP2009521098A (zh) |
| KR (1) | KR20080075143A (zh) |
| CN (1) | CN101506943A (zh) |
| TW (1) | TW200802851A (zh) |
| WO (1) | WO2007056708A2 (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8530934B2 (en) | 2005-11-07 | 2013-09-10 | Atmel Corporation | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto |
| US20070148890A1 (en) * | 2005-12-27 | 2007-06-28 | Enicks Darwin G | Oxygen enhanced metastable silicon germanium film layer |
| US20070262295A1 (en) * | 2006-05-11 | 2007-11-15 | Atmel Corporation | A method for manipulation of oxygen within semiconductor materials |
| US7550758B2 (en) | 2006-10-31 | 2009-06-23 | Atmel Corporation | Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator |
| US7553717B2 (en) * | 2007-05-11 | 2009-06-30 | Texas Instruments Incorporated | Recess etch for epitaxial SiGe |
| US20090189159A1 (en) * | 2008-01-28 | 2009-07-30 | Atmel Corporation | Gettering layer on substrate |
| SE535380C2 (sv) * | 2011-01-31 | 2012-07-17 | Fairchild Semiconductor | Bipolär transistor i kiselkarbid med övervuxen emitter |
| US9048108B2 (en) * | 2012-05-22 | 2015-06-02 | International Business Machines Corporation | Integrated circuit with on chip planar diode and CMOS devices |
| US9385233B2 (en) | 2013-06-26 | 2016-07-05 | Globalfoundries Inc. | Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide |
| US9716174B2 (en) | 2013-07-18 | 2017-07-25 | Globalfoundries Inc. | Electrical isolation of FinFET active region by selective oxidation of sacrificial layer |
| US9224865B2 (en) | 2013-07-18 | 2015-12-29 | Globalfoundries Inc. | FinFET with insulator under channel |
| US9349730B2 (en) | 2013-07-18 | 2016-05-24 | Globalfoundries Inc. | Fin transformation process and isolation structures facilitating different Fin isolation schemes |
| US9093496B2 (en) | 2013-07-18 | 2015-07-28 | Globalfoundries Inc. | Process for faciltiating fin isolation schemes |
| US9105677B2 (en) | 2013-10-22 | 2015-08-11 | International Business Machines Corporation | Base profile of self-aligned bipolar transistors for power amplifier applications |
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| US5155571A (en) * | 1990-08-06 | 1992-10-13 | The Regents Of The University Of California | Complementary field effect transistors having strained superlattice structure |
| US5241214A (en) * | 1991-04-29 | 1993-08-31 | Massachusetts Institute Of Technology | Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof |
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-
2005
- 2005-11-07 US US11/268,154 patent/US20070102834A1/en not_active Abandoned
-
2006
- 2006-11-03 EP EP06839718A patent/EP1949420A2/en not_active Withdrawn
- 2006-11-03 WO PCT/US2006/060555 patent/WO2007056708A2/en active Search and Examination
- 2006-11-03 KR KR1020087013413A patent/KR20080075143A/ko not_active Application Discontinuation
- 2006-11-03 CN CNA2006800506182A patent/CN101506943A/zh active Pending
- 2006-11-03 JP JP2008540379A patent/JP2009521098A/ja not_active Withdrawn
- 2006-11-06 TW TW095140935A patent/TW200802851A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200802851A (en) | 2008-01-01 |
| EP1949420A2 (en) | 2008-07-30 |
| US20070102834A1 (en) | 2007-05-10 |
| WO2007056708A2 (en) | 2007-05-18 |
| WO2007056708A3 (en) | 2009-05-07 |
| CN101506943A (zh) | 2009-08-12 |
| KR20080075143A (ko) | 2008-08-14 |
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