JP2009518874A - 高効率発光ダイオード（ｌｅｄ） - Google Patents

高効率発光ダイオード（ｌｅｄ） Download PDF

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Publication number
JP2009518874A
JP2009518874A JP2008544546A JP2008544546A JP2009518874A JP 2009518874 A JP2009518874 A JP 2009518874A JP 2008544546 A JP2008544546 A JP 2008544546A JP 2008544546 A JP2008544546 A JP 2008544546A JP 2009518874 A JP2009518874 A JP 2009518874A
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JP
Japan
Prior art keywords
light
light emitting
optical element
led
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008544546A
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English (en)
Japanese (ja)
Other versions
JP2009518874A5 (enExample
Inventor
スティーブン ピー． デンバース，
シュウジ ナカムラ，
ジェームス エス． スペック，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of JP2009518874A publication Critical patent/JP2009518874A/ja
Publication of JP2009518874A5 publication Critical patent/JP2009518874A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0015—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0018—Redirecting means on the surface of the light guide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
JP2008544546A 2005-12-08 2006-12-08 高効率発光ダイオード（ｌｅｄ） Pending JP2009518874A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US74848005P 2005-12-08 2005-12-08
US76497506P 2006-02-03 2006-02-03
PCT/US2006/047008 WO2007067758A2 (en) 2005-12-08 2006-12-08 High efficiency light emitting diode (led)

Publications (2)

Publication Number Publication Date
JP2009518874A true JP2009518874A (ja) 2009-05-07
JP2009518874A5 JP2009518874A5 (enExample) 2010-12-16

Family

ID=38123537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008544546A Pending JP2009518874A (ja) 2005-12-08 2006-12-08 高効率発光ダイオード（ｌｅｄ）

Country Status (5)

Country Link
US (1) US7956371B2 (enExample)
EP (1) EP1969647A4 (enExample)
JP (1) JP2009518874A (enExample)
KR (1) KR20080077259A (enExample)
WO (1) WO2007067758A2 (enExample)

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KR20100132149A (ko) * 2009-06-09 2010-12-17 서울반도체 주식회사 편광 광원 및 형광체 필터를 채택한 액정 디스플레이
JP2011151311A (ja) * 2010-01-25 2011-08-04 Panasonic Electric Works Co Ltd 発光装置
WO2021070910A1 (ja) * 2019-10-09 2021-04-15 パナソニックＩｐマネジメント株式会社 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法

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US7719020B2 (en) 2005-06-17 2010-05-18 The Regents Of The University Of California (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20070258241A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with non-bonded converging optical element
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US7525126B2 (en) * 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
WO2008011377A2 (en) * 2006-07-17 2008-01-24 3M Innovative Properties Company Led package with converging extractor
WO2008060586A2 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
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US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
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JP2010512661A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長
JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
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JP2012248553A (ja) * 2011-05-25 2012-12-13 Panasonic Corp 発光装置及びそれを用いた照明装置
TW201306323A (zh) * 2011-07-31 2013-02-01 Walsin Lihwa Corp 發光二極體裝置
TW201327937A (zh) * 2011-12-30 2013-07-01 Radiant Opto Electronics Corp 發光二極體元件
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CN105705860B (zh) * 2013-11-05 2019-05-28 飞利浦照明控股有限公司 发光设备
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JP6690845B1 (ja) 2019-03-26 2020-04-28 Ｎｅｃプラットフォームズ株式会社 Ｌｅｄ光源機構、電話機およびｌｅｄ光源形成方法
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Also Published As

Publication number Publication date
WO2007067758A2 (en) 2007-06-14
US20070145397A1 (en) 2007-06-28
US7956371B2 (en) 2011-06-07
KR20080077259A (ko) 2008-08-21
EP1969647A2 (en) 2008-09-17
WO2007067758A3 (en) 2008-01-10
EP1969647A4 (en) 2012-08-01

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