KR20080077259A - 고효율 발광 다이오드 - Google Patents

고효율 발광 다이오드 Download PDF

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Publication number
KR20080077259A
KR20080077259A KR1020087016522A KR20087016522A KR20080077259A KR 20080077259 A KR20080077259 A KR 20080077259A KR 1020087016522 A KR1020087016522 A KR 1020087016522A KR 20087016522 A KR20087016522 A KR 20087016522A KR 20080077259 A KR20080077259 A KR 20080077259A
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KR
South Korea
Prior art keywords
light
light emitting
optical element
led
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087016522A
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English (en)
Korean (ko)
Inventor
스티븐 피. 덴바스
슈지 나카무라
제임스 에스. 스펙
Original Assignee
더 리전츠 오브 더 유니버시티 오브 캘리포니아
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 더 리전츠 오브 더 유니버시티 오브 캘리포니아 filed Critical 더 리전츠 오브 더 유니버시티 오브 캘리포니아
Publication of KR20080077259A publication Critical patent/KR20080077259A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0015Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0018Redirecting means on the surface of the light guide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/882Scattering means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
KR1020087016522A 2005-12-08 2006-12-08 고효율 발광 다이오드 Ceased KR20080077259A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US74848005P 2005-12-08 2005-12-08
US60/748,480 2005-12-08
US76497506P 2006-02-03 2006-02-03
US60/764,975 2006-02-03

Publications (1)

Publication Number Publication Date
KR20080077259A true KR20080077259A (ko) 2008-08-21

Family

ID=38123537

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087016522A Ceased KR20080077259A (ko) 2005-12-08 2006-12-08 고효율 발광 다이오드

Country Status (5)

Country Link
US (1) US7956371B2 (enExample)
EP (1) EP1969647A4 (enExample)
JP (1) JP2009518874A (enExample)
KR (1) KR20080077259A (enExample)
WO (1) WO2007067758A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110115320A (ko) * 2010-04-15 2011-10-21 엘지이노텍 주식회사 발광소자 패키지, 그 제조방법 및 조명시스템
KR101290688B1 (ko) * 2011-12-30 2013-07-31 레디언트 옵토-일렉트로닉스 코포레이션 발광 다이오드 디바이스

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US7719020B2 (en) 2005-06-17 2010-05-18 The Regents Of The University Of California (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20070258241A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with non-bonded converging optical element
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US7525126B2 (en) * 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
WO2008011377A2 (en) * 2006-07-17 2008-01-24 3M Innovative Properties Company Led package with converging extractor
WO2008060586A2 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
JP5372766B2 (ja) * 2006-11-15 2013-12-18 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光取り出し効率の高い球形led
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
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JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
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JP2012248553A (ja) * 2011-05-25 2012-12-13 Panasonic Corp 発光装置及びそれを用いた照明装置
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CN105705860B (zh) * 2013-11-05 2019-05-28 飞利浦照明控股有限公司 发光设备
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KR101290688B1 (ko) * 2011-12-30 2013-07-31 레디언트 옵토-일렉트로닉스 코포레이션 발광 다이오드 디바이스

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Publication number Publication date
WO2007067758A2 (en) 2007-06-14
US20070145397A1 (en) 2007-06-28
US7956371B2 (en) 2011-06-07
EP1969647A2 (en) 2008-09-17
WO2007067758A3 (en) 2008-01-10
JP2009518874A (ja) 2009-05-07
EP1969647A4 (en) 2012-08-01

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