JP2009516930A5 - - Google Patents

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Publication number
JP2009516930A5
JP2009516930A5 JP2008542331A JP2008542331A JP2009516930A5 JP 2009516930 A5 JP2009516930 A5 JP 2009516930A5 JP 2008542331 A JP2008542331 A JP 2008542331A JP 2008542331 A JP2008542331 A JP 2008542331A JP 2009516930 A5 JP2009516930 A5 JP 2009516930A5
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JP
Japan
Prior art keywords
thin film
semiconductor material
organic
compound
alicyclic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008542331A
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English (en)
Japanese (ja)
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JP2009516930A (ja
Filing date
Publication date
Priority claimed from US11/285,238 external-priority patent/US7422777B2/en
Application filed filed Critical
Publication of JP2009516930A publication Critical patent/JP2009516930A/ja
Publication of JP2009516930A5 publication Critical patent/JP2009516930A5/ja
Pending legal-status Critical Current

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JP2008542331A 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド Pending JP2009516930A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/285,238 US7422777B2 (en) 2005-11-22 2005-11-22 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2006/043200 WO2007061614A1 (en) 2005-11-22 2006-11-07 Naphthalene based tetracarboxylic diimides as semiconductor materials

Publications (2)

Publication Number Publication Date
JP2009516930A JP2009516930A (ja) 2009-04-23
JP2009516930A5 true JP2009516930A5 (https=) 2009-12-17

Family

ID=37733692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008542331A Pending JP2009516930A (ja) 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド

Country Status (6)

Country Link
US (1) US7422777B2 (https=)
EP (1) EP1952453B1 (https=)
JP (1) JP2009516930A (https=)
KR (1) KR20080073303A (https=)
TW (1) TWI416721B (https=)
WO (1) WO2007061614A1 (https=)

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WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
US7892454B2 (en) * 2006-11-17 2011-02-22 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
WO2008063609A2 (en) 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
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EP2240529B1 (en) * 2008-02-05 2017-07-19 Basf Se Naphthalene-imide semiconductor polymers
EP2240970B1 (en) * 2008-02-05 2018-03-14 Basf Se Perylene semiconductors and methods of preparation and use thereof
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US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
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KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件
JP2021082619A (ja) * 2018-03-16 2021-05-27 国立大学法人大阪大学 ｎ型有機半導体材料及びそれを含有する有機半導体膜並びに有機薄膜トランジスタ
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