JP2009516930A5 - - Google Patents

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Publication number
JP2009516930A5
JP2009516930A5 JP2008542331A JP2008542331A JP2009516930A5 JP 2009516930 A5 JP2009516930 A5 JP 2009516930A5 JP 2008542331 A JP2008542331 A JP 2008542331A JP 2008542331 A JP2008542331 A JP 2008542331A JP 2009516930 A5 JP2009516930 A5 JP 2009516930A5
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JP
Japan
Prior art keywords
thin film
semiconductor material
organic
compound
alicyclic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008542331A
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English (en)
Japanese (ja)
Other versions
JP2009516930A (ja
Filing date
Publication date
Priority claimed from US11/285,238 external-priority patent/US7422777B2/en
Application filed filed Critical
Publication of JP2009516930A publication Critical patent/JP2009516930A/ja
Publication of JP2009516930A5 publication Critical patent/JP2009516930A5/ja
Pending legal-status Critical Current

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JP2008542331A 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド Pending JP2009516930A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/285,238 US7422777B2 (en) 2005-11-22 2005-11-22 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2006/043200 WO2007061614A1 (en) 2005-11-22 2006-11-07 Naphthalene based tetracarboxylic diimides as semiconductor materials

Publications (2)

Publication Number Publication Date
JP2009516930A JP2009516930A (ja) 2009-04-23
JP2009516930A5 true JP2009516930A5 (https=) 2009-12-17

Family

ID=37733692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008542331A Pending JP2009516930A (ja) 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド

Country Status (6)

Country Link
US (1) US7422777B2 (https=)
EP (1) EP1952453B1 (https=)
JP (1) JP2009516930A (https=)
KR (1) KR20080073303A (https=)
TW (1) TWI416721B (https=)
WO (1) WO2007061614A1 (https=)

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WO2008063609A2 (en) 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
US7892454B2 (en) * 2006-11-17 2011-02-22 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
US7804087B2 (en) * 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
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US9219233B2 (en) * 2008-02-05 2015-12-22 Basf Se Semiconductor materials prepared from rylene-(π-acceptor)copolymers
JP5523351B2 (ja) * 2008-02-05 2014-06-18 ビーエーエスエフ ソシエタス・ヨーロピア ペリレン半導体並びにその製造方法及び使用
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
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US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
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US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件
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