JP2009514223A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009514223A5 JP2009514223A5 JP2008537779A JP2008537779A JP2009514223A5 JP 2009514223 A5 JP2009514223 A5 JP 2009514223A5 JP 2008537779 A JP2008537779 A JP 2008537779A JP 2008537779 A JP2008537779 A JP 2008537779A JP 2009514223 A5 JP2009514223 A5 JP 2009514223A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor material
- electron
- organic
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/263,111 US7629605B2 (en) | 2005-10-31 | 2005-10-31 | N-type semiconductor materials for thin film transistors |
| PCT/US2006/040750 WO2007053303A2 (en) | 2005-10-31 | 2006-10-16 | N-type semiconductor materials for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009514223A JP2009514223A (ja) | 2009-04-02 |
| JP2009514223A5 true JP2009514223A5 (https=) | 2010-12-16 |
Family
ID=37882142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008537779A Pending JP2009514223A (ja) | 2005-10-31 | 2006-10-16 | 薄膜トランジスタのためのｎ型半導体材料 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7629605B2 (https=) |
| EP (1) | EP1943691A2 (https=) |
| JP (1) | JP2009514223A (https=) |
| KR (1) | KR20080063803A (https=) |
| TW (1) | TW200729571A (https=) |
| WO (1) | WO2007053303A2 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4921982B2 (ja) * | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| US7629605B2 (en) * | 2005-10-31 | 2009-12-08 | Eastman Kodak Company | N-type semiconductor materials for thin film transistors |
| US7422777B2 (en) * | 2005-11-22 | 2008-09-09 | Eastman Kodak Company | N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| WO2007146250A2 (en) * | 2006-06-12 | 2007-12-21 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| EP2089398A2 (en) * | 2006-10-25 | 2009-08-19 | Polyera Corporation | Organic semiconductor materials and methods of preparing and use thereof |
| WO2008063609A2 (en) | 2006-11-17 | 2008-05-29 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| CN101622253B (zh) * | 2007-01-08 | 2015-04-29 | 破立纪元有限公司 | 用于制备基于芳烃-双（二羧酰亚胺）的半导体材料的方法和用于制备它们的相关中间体 |
| WO2008091670A2 (en) * | 2007-01-24 | 2008-07-31 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| WO2009108397A1 (en) * | 2008-01-07 | 2009-09-03 | The Johns Hopkins University | Devices having high dielectric-constant, ionically-polarizable materials |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| US20110079773A1 (en) * | 2009-08-21 | 2011-04-07 | Wasielewski Michael R | Selectively Functionalized Rylene Imides and Diimides |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| KR101490104B1 (ko) * | 2013-06-12 | 2015-03-25 | 경상대학교산학협력단 | 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자 |
| CN106688050B (zh) | 2014-06-11 | 2018-09-18 | 伊斯曼柯达公司 | 具有带含硫代硫酸盐聚合物的电介质层的器件 |
| KR102330698B1 (ko) * | 2015-09-04 | 2021-11-23 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2951349A1 (de) | 1979-12-20 | 1981-07-02 | Bayer Ag, 5090 Leverkusen | Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter |
| US4442193A (en) * | 1983-02-22 | 1984-04-10 | Eastman Kodak Company | Photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds |
| US4468444A (en) * | 1983-04-21 | 1984-08-28 | Eastman Kodak Company | Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds |
| DE59608872D1 (de) * | 1995-10-12 | 2002-04-18 | Ciba Sc Holding Ag | Naphthalinlactamimid-Fluoreszenzfarbstoffe |
| JP3373783B2 (ja) | 1998-05-29 | 2003-02-04 | 京セラミタ株式会社 | ナフタレンテトラカルボン酸ジイミド誘導体及び電子写真用感光体 |
| JP3559173B2 (ja) * | 1998-07-01 | 2004-08-25 | 京セラミタ株式会社 | 負帯電単層型電子写真感光体 |
| JP2000113504A (ja) * | 1998-10-05 | 2000-04-21 | Mitsui Chemicals Inc | 光記録媒体 |
| US6387727B1 (en) | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| DE20021356U1 (de) | 2000-12-18 | 2001-02-22 | Basf Ag, 67063 Ludwigshafen | Polyvinylchlorid mit kernhydrierten Phthalat-Weichmachern |
| US20020192397A1 (en) * | 2001-02-20 | 2002-12-19 | Fuji Photo Film Co., Ltd. | Polarizing plate protection film |
| US6844033B2 (en) * | 2001-03-01 | 2005-01-18 | Konica Corporation | Cellulose ester film, its manufacturing method, polarizing plate, and liquid crystal display |
| JP4792677B2 (ja) * | 2001-04-25 | 2011-10-12 | コニカミノルタホールディングス株式会社 | セルロースエステルフィルム |
| CN100497452C (zh) | 2002-01-16 | 2009-06-10 | 伊士曼化工公司 | 用作聚合物的增塑剂的新型糖酯和多元醇酯、包含所述增塑剂的组合物和制品以及所述增塑剂的使用方法 |
| EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
| WO2005066718A1 (ja) * | 2003-12-26 | 2005-07-21 | Canon Kabushiki Kaisha | 電子写真感光体、プロセスカートリッジおよび電子写真装置 |
| JP4921982B2 (ja) * | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| US7629605B2 (en) * | 2005-10-31 | 2009-12-08 | Eastman Kodak Company | N-type semiconductor materials for thin film transistors |
-
2005
- 2005-10-31 US US11/263,111 patent/US7629605B2/en not_active Expired - Fee Related
-
2006
- 2006-10-16 JP JP2008537779A patent/JP2009514223A/ja active Pending
- 2006-10-16 EP EP06817131A patent/EP1943691A2/en not_active Withdrawn
- 2006-10-16 WO PCT/US2006/040750 patent/WO2007053303A2/en not_active Ceased
- 2006-10-16 KR KR1020087010409A patent/KR20080063803A/ko not_active Ceased
- 2006-10-30 TW TW095139948A patent/TW200729571A/zh unknown
-
2009
- 2009-08-21 US US12/545,337 patent/US7807994B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009514223A5 (https=) | ||
| JP2009516930A5 (https=) | ||
| JP2008538653A5 (https=) | ||
| JP2008524846A5 (https=) | ||
| JP2010509789A5 (https=) | ||
| Miao | N-heteropentacenes and N-heteropentacenequinones: From molecules to semiconductors | |
| Zhou et al. | High performance n-type and ambipolar small organic semiconductors for organic thin film transistors | |
| JP2011520246A5 (https=) | ||
| JP5665137B2 (ja) | 有機半導体材料、有機半導体薄膜および有機薄膜トランジスタ | |
| Park et al. | High-performance n-type organic transistor with a solution-processed and exfoliation-transferred two-dimensional crystalline layered film | |
| JP2008524869A5 (https=) | ||
| ATE518260T1 (de) | Tetracarboxylische diimidverbindungen auf naphthalenbasis als halbleiterwerkstoffe | |
| JP2010531551A5 (https=) | ||
| TW200733378A (en) | N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimides as N-type semiconductor materials | |
| CN102659790B (zh) | 有机发光材料及制备方法及应用 | |
| TW200644304A (en) | Semiconductor materials for thin film transistors | |
| JP2010534403A5 (https=) | ||
| TW200729571A (en) | N-type semiconductor materials for thin film transistors | |
| Yoo et al. | N-Unsubstituted thienoisoindigos: preparation, molecular packing and ambipolar organic field-effect transistors | |
| Wu et al. | Synthesis of planar dibenzo [de, op] bistetracene derivatives for organic field-effect transistor applications: substituent effect on crystal packing and charge transport property | |
| Huang et al. | Performance enhancement of organic thin-film transistors with improved copper phthalocyanine crystallization by inserting ultrathin pentacene buffer | |
| Matsuo et al. | Fluoro-substituted phenyleneethynylenes: Acetylenic n-type organic semiconductors | |
| JP6979402B2 (ja) | 有機半導体デバイス製造用組成物 | |
| CN103804408B (zh) | 一种含硅的苯并蒽类有机电致发光材料及其制备方法和应用 | |
| CN103102877A (zh) | 含硅的有机发光材料及其制备方法和应用 |