TW200729571A - N-type semiconductor materials for thin film transistors - Google Patents

N-type semiconductor materials for thin film transistors

Info

Publication number
TW200729571A
TW200729571A TW095139948A TW95139948A TW200729571A TW 200729571 A TW200729571 A TW 200729571A TW 095139948 A TW095139948 A TW 095139948A TW 95139948 A TW95139948 A TW 95139948A TW 200729571 A TW200729571 A TW 200729571A
Authority
TW
Taiwan
Prior art keywords
thin film
type semiconductor
film transistors
semiconductor materials
film transistor
Prior art date
Application number
TW095139948A
Other languages
English (en)
Chinese (zh)
Inventor
Deepak Shukla
Diane C Freeman
Shelby F Nelson
Jeffrey T Carey
Wendy G Ahearn
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200729571A publication Critical patent/TW200729571A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
TW095139948A 2005-10-31 2006-10-30 N-type semiconductor materials for thin film transistors TW200729571A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/263,111 US7629605B2 (en) 2005-10-31 2005-10-31 N-type semiconductor materials for thin film transistors

Publications (1)

Publication Number Publication Date
TW200729571A true TW200729571A (en) 2007-08-01

Family

ID=37882142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139948A TW200729571A (en) 2005-10-31 2006-10-30 N-type semiconductor materials for thin film transistors

Country Status (6)

Country Link
US (2) US7629605B2 (https=)
EP (1) EP1943691A2 (https=)
JP (1) JP2009514223A (https=)
KR (1) KR20080063803A (https=)
TW (1) TW200729571A (https=)
WO (1) WO2007053303A2 (https=)

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JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
WO2008063609A2 (en) 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
CN101622253B (zh) * 2007-01-08 2015-04-29 破立纪元有限公司 用于制备基于芳烃-双（二羧酰亚胺）的半导体材料的方法和用于制备它们的相关中间体
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
WO2009108397A1 (en) * 2008-01-07 2009-09-03 The Johns Hopkins University Devices having high dielectric-constant, ionically-polarizable materials
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
US20110079773A1 (en) * 2009-08-21 2011-04-07 Wasielewski Michael R Selectively Functionalized Rylene Imides and Diimides
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件
KR102330698B1 (ko) * 2015-09-04 2021-11-23 삼성전자주식회사 유기 광전 소자 및 이미지 센서

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DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
US4442193A (en) * 1983-02-22 1984-04-10 Eastman Kodak Company Photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds
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DE59608872D1 (de) * 1995-10-12 2002-04-18 Ciba Sc Holding Ag Naphthalinlactamimid-Fluoreszenzfarbstoffe
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JP3559173B2 (ja) * 1998-07-01 2004-08-25 京セラミタ株式会社 負帯電単層型電子写真感光体
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US6387727B1 (en) 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
DE20021356U1 (de) 2000-12-18 2001-02-22 Basf Ag, 67063 Ludwigshafen Polyvinylchlorid mit kernhydrierten Phthalat-Weichmachern
US20020192397A1 (en) * 2001-02-20 2002-12-19 Fuji Photo Film Co., Ltd. Polarizing plate protection film
US6844033B2 (en) * 2001-03-01 2005-01-18 Konica Corporation Cellulose ester film, its manufacturing method, polarizing plate, and liquid crystal display
JP4792677B2 (ja) * 2001-04-25 2011-10-12 コニカミノルタホールディングス株式会社 セルロースエステルフィルム
CN100497452C (zh) 2002-01-16 2009-06-10 伊士曼化工公司 用作聚合物的增塑剂的新型糖酯和多元醇酯、包含所述增塑剂的组合物和制品以及所述增塑剂的使用方法
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
WO2005066718A1 (ja) * 2003-12-26 2005-07-21 Canon Kabushiki Kaisha 電子写真感光体、プロセスカートリッジおよび電子写真装置
JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors

Also Published As

Publication number Publication date
EP1943691A2 (en) 2008-07-16
US7807994B2 (en) 2010-10-05
JP2009514223A (ja) 2009-04-02
US7629605B2 (en) 2009-12-08
US20070096084A1 (en) 2007-05-03
KR20080063803A (ko) 2008-07-07
WO2007053303A2 (en) 2007-05-10
US20090312553A1 (en) 2009-12-17
WO2007053303A3 (en) 2007-06-21

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