JP2009516393A - 表面処理された金属酸化物粒子を含む誘電媒体 - Google Patents

表面処理された金属酸化物粒子を含む誘電媒体 Download PDF

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Publication number
JP2009516393A
JP2009516393A JP2008541256A JP2008541256A JP2009516393A JP 2009516393 A JP2009516393 A JP 2009516393A JP 2008541256 A JP2008541256 A JP 2008541256A JP 2008541256 A JP2008541256 A JP 2008541256A JP 2009516393 A JP2009516393 A JP 2009516393A
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Japan
Prior art keywords
electronic device
metal oxide
group
curable composition
dispersion
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JP2008541256A
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English (en)
Japanese (ja)
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JP2009516393A5 (https=
Inventor
イー. ネイピーララ,マーク
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2009516393A publication Critical patent/JP2009516393A/ja
Publication of JP2009516393A5 publication Critical patent/JP2009516393A5/ja
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H10P14/6346Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating using printing, e.g. ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
JP2008541256A 2005-11-18 2006-11-14 表面処理された金属酸化物粒子を含む誘電媒体 Withdrawn JP2009516393A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/282,923 US7498662B2 (en) 2005-11-18 2005-11-18 Dielectric media including surface-treated metal oxide particles
PCT/US2006/044055 WO2007061669A1 (en) 2005-11-18 2006-11-14 Dielectric media including surface-treated metal oxide particles

Publications (2)

Publication Number Publication Date
JP2009516393A true JP2009516393A (ja) 2009-04-16
JP2009516393A5 JP2009516393A5 (https=) 2010-01-07

Family

ID=38052603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008541256A Withdrawn JP2009516393A (ja) 2005-11-18 2006-11-14 表面処理された金属酸化物粒子を含む誘電媒体

Country Status (5)

Country Link
US (1) US7498662B2 (https=)
EP (1) EP1952429A1 (https=)
JP (1) JP2009516393A (https=)
CN (1) CN101310368B (https=)
WO (1) WO2007061669A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7765265B1 (en) 2005-05-11 2010-07-27 Aol Inc. Identifying users sharing common characteristics
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
US8164087B2 (en) 2006-06-12 2012-04-24 Alcatel Lucent Organic semiconductor compositions with nanoparticles
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
WO2009005972A1 (en) * 2007-06-29 2009-01-08 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
TWI412125B (zh) * 2007-07-17 2013-10-11 Creator Technology Bv 電子元件及電子元件之製法
US8956555B2 (en) * 2008-05-30 2015-02-17 3M Innovative Properties Company Silylethynyl pentacene compounds and compositions and methods of making and using the same
US8017471B2 (en) * 2008-08-06 2011-09-13 International Business Machines Corporation Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry
KR101040320B1 (ko) * 2008-08-29 2011-06-10 고려대학교 산학협력단 절연막 및 절연막의 제조 방법
DE102009016659A1 (de) * 2008-09-23 2010-06-24 Siemens Aktiengesellschaft Ankergruppe für Monolagen organischer Verbindungen auf Metall und damit hergestelltes Bauelement auf Basis organischer Elektronik
EP2435446B8 (en) 2009-05-29 2017-02-22 3M Innovative Properties Company Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
DE102009037691A1 (de) 2009-08-17 2011-03-03 Siemens Aktiengesellschaft Dielektrische Schutzschicht für eine selbstorganisierende Monolage (SAM)
US9159493B2 (en) * 2010-03-17 2015-10-13 The Secretary Of State For Defense Dielectrics
JP6034613B2 (ja) * 2012-07-31 2016-11-30 第一工業製薬株式会社 無機化合物微粒子分散組成物の製造方法および無機化合物微粒子分散硬化物の製造方法
KR102570397B1 (ko) * 2016-05-11 2023-08-24 삼성디스플레이 주식회사 유기 박막 트랜지스터 및 그 제조 방법
CN107722557A (zh) * 2016-08-12 2018-02-23 深圳先进技术研究院 一种超薄电容材料及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329058B1 (en) * 1998-07-30 2001-12-11 3M Innovative Properties Company Nanosize metal oxide particles for producing transparent metal oxide colloids and ceramers
GB9927431D0 (en) * 1999-11-22 2000-01-19 Ciba Sc Holding Ag Casting resin and process for the fabrication of resin molds
AU781584B2 (en) * 1999-12-21 2005-06-02 Flexenable Limited Solution processed devices
EP1195417B1 (de) * 2000-10-05 2009-10-14 Evonik Degussa GmbH Siliciumorganische Nanokapseln
EP1231637A3 (en) * 2001-02-08 2004-08-25 Hitachi, Ltd. High dielectric constant composite material and multilayer wiring board using the same
EP1393122B1 (en) * 2001-05-15 2018-03-28 E Ink Corporation Electrophoretic particles
WO2004081111A1 (en) * 2003-03-11 2004-09-23 Dow Global Technologies Inc. High dielectric constant composites
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
EP1479734B1 (en) 2003-05-20 2009-02-11 DSM IP Assets B.V. Nano-structured surface coating process, nano-structured coatings and articles comprising the coating
US20050095448A1 (en) * 2003-11-04 2005-05-05 Katz Howard E. Layer incorporating particles with a high dielectric constant

Also Published As

Publication number Publication date
CN101310368A (zh) 2008-11-19
CN101310368B (zh) 2011-08-31
WO2007061669A1 (en) 2007-05-31
US7498662B2 (en) 2009-03-03
EP1952429A1 (en) 2008-08-06
US20070114516A1 (en) 2007-05-24

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