CN101310368B - 电子器件、可印刷分散体及制备含电介质电子器件的方法 - Google Patents

电子器件、可印刷分散体及制备含电介质电子器件的方法 Download PDF

Info

Publication number
CN101310368B
CN101310368B CN2006800430658A CN200680043065A CN101310368B CN 101310368 B CN101310368 B CN 101310368B CN 2006800430658 A CN2006800430658 A CN 2006800430658A CN 200680043065 A CN200680043065 A CN 200680043065A CN 101310368 B CN101310368 B CN 101310368B
Authority
CN
China
Prior art keywords
dispersion
electronic device
group
curable compositions
following material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800430658A
Other languages
English (en)
Chinese (zh)
Other versions
CN101310368A (zh
Inventor
马克·E·纳皮耶腊拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101310368A publication Critical patent/CN101310368A/zh
Application granted granted Critical
Publication of CN101310368B publication Critical patent/CN101310368B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H10P14/6346—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating using printing, e.g. ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
CN2006800430658A 2005-11-18 2006-11-14 电子器件、可印刷分散体及制备含电介质电子器件的方法 Expired - Fee Related CN101310368B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/282,923 2005-11-18
US11/282,923 US7498662B2 (en) 2005-11-18 2005-11-18 Dielectric media including surface-treated metal oxide particles
PCT/US2006/044055 WO2007061669A1 (en) 2005-11-18 2006-11-14 Dielectric media including surface-treated metal oxide particles

Publications (2)

Publication Number Publication Date
CN101310368A CN101310368A (zh) 2008-11-19
CN101310368B true CN101310368B (zh) 2011-08-31

Family

ID=38052603

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800430658A Expired - Fee Related CN101310368B (zh) 2005-11-18 2006-11-14 电子器件、可印刷分散体及制备含电介质电子器件的方法

Country Status (5)

Country Link
US (1) US7498662B2 (https=)
EP (1) EP1952429A1 (https=)
JP (1) JP2009516393A (https=)
CN (1) CN101310368B (https=)
WO (1) WO2007061669A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7765265B1 (en) 2005-05-11 2010-07-27 Aol Inc. Identifying users sharing common characteristics
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
US8164087B2 (en) 2006-06-12 2012-04-24 Alcatel Lucent Organic semiconductor compositions with nanoparticles
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
WO2009005972A1 (en) * 2007-06-29 2009-01-08 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
TWI412125B (zh) * 2007-07-17 2013-10-11 Creator Technology Bv 電子元件及電子元件之製法
US8956555B2 (en) * 2008-05-30 2015-02-17 3M Innovative Properties Company Silylethynyl pentacene compounds and compositions and methods of making and using the same
US8017471B2 (en) * 2008-08-06 2011-09-13 International Business Machines Corporation Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry
KR101040320B1 (ko) * 2008-08-29 2011-06-10 고려대학교 산학협력단 절연막 및 절연막의 제조 방법
DE102009016659A1 (de) * 2008-09-23 2010-06-24 Siemens Aktiengesellschaft Ankergruppe für Monolagen organischer Verbindungen auf Metall und damit hergestelltes Bauelement auf Basis organischer Elektronik
EP2435446B8 (en) 2009-05-29 2017-02-22 3M Innovative Properties Company Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
DE102009037691A1 (de) 2009-08-17 2011-03-03 Siemens Aktiengesellschaft Dielektrische Schutzschicht für eine selbstorganisierende Monolage (SAM)
US9159493B2 (en) * 2010-03-17 2015-10-13 The Secretary Of State For Defense Dielectrics
JP6034613B2 (ja) * 2012-07-31 2016-11-30 第一工業製薬株式会社 無機化合物微粒子分散組成物の製造方法および無機化合物微粒子分散硬化物の製造方法
KR102570397B1 (ko) * 2016-05-11 2023-08-24 삼성디스플레이 주식회사 유기 박막 트랜지스터 및 그 제조 방법
CN107722557A (zh) * 2016-08-12 2018-02-23 深圳先进技术研究院 一种超薄电容材料及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432526B1 (en) * 1999-05-27 2002-08-13 3M Innovative Properties Company Nanosize metal oxide particles for producing transparent metal oxide colloids and ceramers
US6924971B2 (en) * 2001-02-08 2005-08-02 Hitachi, Ltd. High dielectric constant composite material and multilayer wiring board using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9927431D0 (en) * 1999-11-22 2000-01-19 Ciba Sc Holding Ag Casting resin and process for the fabrication of resin molds
AU781584B2 (en) * 1999-12-21 2005-06-02 Flexenable Limited Solution processed devices
EP1195417B1 (de) * 2000-10-05 2009-10-14 Evonik Degussa GmbH Siliciumorganische Nanokapseln
EP1393122B1 (en) * 2001-05-15 2018-03-28 E Ink Corporation Electrophoretic particles
WO2004081111A1 (en) * 2003-03-11 2004-09-23 Dow Global Technologies Inc. High dielectric constant composites
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
EP1479734B1 (en) 2003-05-20 2009-02-11 DSM IP Assets B.V. Nano-structured surface coating process, nano-structured coatings and articles comprising the coating
US20050095448A1 (en) * 2003-11-04 2005-05-05 Katz Howard E. Layer incorporating particles with a high dielectric constant

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432526B1 (en) * 1999-05-27 2002-08-13 3M Innovative Properties Company Nanosize metal oxide particles for producing transparent metal oxide colloids and ceramers
US6924971B2 (en) * 2001-02-08 2005-08-02 Hitachi, Ltd. High dielectric constant composite material and multilayer wiring board using the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Ashok Maliakal et al..Inorganic Oxide Core, Polymer Shell Nanocomposite as aHigh K Gate Dielectric for Flexible Electronics Applications.J.AM.CHEM.SOC.127 42.2005,127(42),14655-14662.
Ashok Maliakal et al..Inorganic Oxide Core, Polymer Shell Nanocomposite as aHigh K Gate Dielectric for Flexible Electronics Applications.J.AM.CHEM.SOC.127 42.2005,127(42),14655-14662. *
J.Y.Lee,et al.Electrophoretic response of poly(methyl methacrylate)coatedTiO2 nanoparticles.Synthetic Metals153.2005,153221-224.
J.Y.Lee,et al.Electrophoretic response of poly(methyl methacrylate)coatedTiO2 nanoparticles.Synthetic Metals153.2005,153221-224. *

Also Published As

Publication number Publication date
CN101310368A (zh) 2008-11-19
WO2007061669A1 (en) 2007-05-31
JP2009516393A (ja) 2009-04-16
US7498662B2 (en) 2009-03-03
EP1952429A1 (en) 2008-08-06
US20070114516A1 (en) 2007-05-24

Similar Documents

Publication Publication Date Title
CN101310368B (zh) 电子器件、可印刷分散体及制备含电介质电子器件的方法
JP4791778B2 (ja) 有機／無機金属ハイブリッド物質及びこれを含む有機絶縁体組成物
CN102089870B (zh) 栅极绝缘材料、栅极绝缘膜及有机场效应型晶体管
CN1784772A (zh) 有机聚合物、叠层和电容器
CN109716491B (zh) 场效应晶体管的制造方法及无线通信设备的制造方法
Seckin et al. Molecular design of POSS core star polyimides as a route to low-κ dielectric materials
EP3690956A1 (en) Field effect-transistor, method for manufacturing same, wireless communication device using same, and product tag
CN108292630A (zh) 铁电体存储元件、其制造方法、以及使用其的存储单元及使用其的无线通信装置
US7514710B2 (en) Bottom gate thin film transistors
TWI570186B (zh) A composition for an organic semiconductor insulating film, and an organic semiconductor insulating film
JP6485593B2 (ja) 半導体素子、相補型半導体装置、半導体素子の製造方法、無線通信装置および商品タグ
JP2005068347A (ja) ポリイミド組成物およびその製造方法と用途
US20050137281A1 (en) Printable dielectric materials, devices, and methods
EP3135739B1 (en) Composition, electronic device, and thin film transistor
JP6099350B2 (ja) 高誘電率膜形成用インク組成物、高誘電率膜及びその製造方法
JP2010098309A (ja) 有機薄膜トランジスタ
CN108140484A (zh) 电容器及其制造方法以及使用其的无线通讯装置
KR101106532B1 (ko) 플라스틱 인쇄전자소자를 위한 고유전상수를 갖는 하이브리드 절연잉크
KR20160140022A (ko) 절연액, 절연체, 박막 트랜지스터 및 전자 소자
KR101258294B1 (ko) 가교성 유기 절연체 형성용 조성물 및 이를 이용하여제조된 유기 절연체
CN111511805A (zh) 改性硅氧烷树脂、改性硅氧烷树脂交联体以及所述树脂交联体的制造方法
US7928430B2 (en) Mononuclear star-branched polymer dielectric material and organic thin film transistor
US8597423B2 (en) Composition for producing insulator and organic insulator using the same
JP4933051B2 (ja) 電界効果型トランジスタおよびその製造方法、積層体の製造方法
JP4455898B2 (ja) ポリエステル組成物およびその製造方法と用途

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110831

Termination date: 20171114

CF01 Termination of patent right due to non-payment of annual fee