JP2009516382A - 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス - Google Patents

導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス Download PDF

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Publication number
JP2009516382A
JP2009516382A JP2008540722A JP2008540722A JP2009516382A JP 2009516382 A JP2009516382 A JP 2009516382A JP 2008540722 A JP2008540722 A JP 2008540722A JP 2008540722 A JP2008540722 A JP 2008540722A JP 2009516382 A JP2009516382 A JP 2009516382A
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Prior art keywords
layer
stack
conductive layer
compressible
conductive
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Pending
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JP2008540722A
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English (en)
Japanese (ja)
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JP2009516382A5 (enExample
Inventor
ヴァルター,ハーラルト
バイアーライン,ティルマン
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BASF Schweiz AG
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Ciba Holding AG
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Publication of JP2009516382A publication Critical patent/JP2009516382A/ja
Publication of JP2009516382A5 publication Critical patent/JP2009516382A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621Providing a shape to conductive layers, e.g. patterning or selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2008540722A 2005-11-14 2006-11-14 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス Pending JP2009516382A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0523163.4A GB0523163D0 (en) 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack
PCT/IB2006/003995 WO2007074404A2 (en) 2005-11-14 2006-11-14 Method and apparatus for patterning a conductive layer, and a device produced thereby

Publications (2)

Publication Number Publication Date
JP2009516382A true JP2009516382A (ja) 2009-04-16
JP2009516382A5 JP2009516382A5 (enExample) 2010-01-07

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JP2008540722A Pending JP2009516382A (ja) 2005-11-14 2006-11-14 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス

Country Status (7)

Country Link
US (1) US20090038683A1 (enExample)
EP (1) EP1949469A2 (enExample)
JP (1) JP2009516382A (enExample)
KR (1) KR20080073331A (enExample)
CN (2) CN101331624A (enExample)
GB (1) GB0523163D0 (enExample)
WO (1) WO2007074404A2 (enExample)

Cited By (3)

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JP2007149679A (ja) * 2005-11-25 2007-06-14 Seiko Epson Corp 電気化学電池およびその製造方法
WO2011013275A1 (ja) * 2009-07-28 2011-02-03 シャープ株式会社 有機素子及びそれを備えた有機デバイス
JP2018510389A (ja) * 2015-01-12 2018-04-12 ドルビー ラボラトリーズ ライセンシング コーポレイション 画素タイル構造およびレイアウト

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GB2432721B (en) * 2005-11-25 2011-06-22 Seiko Epson Corp Electrochemical cell structure and method of fabrication
US8343779B2 (en) * 2007-04-19 2013-01-01 Basf Se Method for forming a pattern on a substrate and electronic device formed thereby
US20090283137A1 (en) * 2008-05-15 2009-11-19 Steven Thomas Croft Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions
FR2934714B1 (fr) 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
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WO2010017441A2 (en) * 2008-08-07 2010-02-11 Massachusetts Institute Of Technology Method and apparatus for simultaneous lateral and vertical patterning of molecular organic films
US8586857B2 (en) * 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
US9059351B2 (en) 2008-11-04 2015-06-16 Apollo Precision (Fujian) Limited Integrated diode assemblies for photovoltaic modules
WO2010061035A1 (en) * 2008-11-27 2010-06-03 Upm-Kymmene Corporation Embossing of electronic thin-film components
JP2010237375A (ja) * 2009-03-31 2010-10-21 Mitsui Chemicals Inc 微細構造体およびそれを用いた光学素子
US20100319765A1 (en) * 2009-06-17 2010-12-23 Korea University Research And Business Foundation Photovoltaic devices
US8153528B1 (en) * 2009-11-20 2012-04-10 Integrated Photovoltaic, Inc. Surface characteristics of graphite and graphite foils
US20110146778A1 (en) * 2009-12-22 2011-06-23 Miasole Shielding of interior diode assemblies from compression forces in thin-film photovoltaic modules
US9139093B2 (en) * 2010-12-02 2015-09-22 Seiko Epson Corporation Printed matter manufacturing method, printed matter manufacturing device, and printed matter
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
WO2012106433A2 (en) * 2011-02-01 2012-08-09 University Of South Florida A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture
EP2833427A4 (en) 2012-05-09 2016-02-24 Lg Chemical Ltd ORGANIC ELECTROCHEMICAL DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
WO2014145609A1 (en) 2013-03-15 2014-09-18 University Of South Florida Mask-stack-shift method to fabricate organic solar array by spray
CN104681743B (zh) * 2013-11-29 2017-02-15 清华大学 有机发光二极管的制备方法
KR101474977B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
KR101474980B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
GB2526316B (en) * 2014-05-20 2018-10-31 Flexenable Ltd Production of transistor arrays
KR102224824B1 (ko) * 2014-05-30 2021-03-08 삼성전자 주식회사 Ito 전극패턴을 포함하는 전자장치 및 그 전자장치의 제조방법
US10023971B2 (en) * 2015-03-03 2018-07-17 The Trustees Of Boston College Aluminum nanowire arrays and methods of preparation and use thereof
US20170179201A1 (en) * 2015-12-16 2017-06-22 General Electric Company Processes for fabricating organic photodetectors and related photodetectors and systems
KR102660202B1 (ko) * 2016-11-30 2024-04-26 삼성디스플레이 주식회사 윈도우 기판 및 이를 구비하는 표시 장치
US10986435B2 (en) 2017-04-18 2021-04-20 Massachusetts Institute Of Technology Electrostatic acoustic transducer utilized in a hearing aid or audio processing system
CN113745366B (zh) * 2020-05-14 2024-03-12 杭州纤纳光电科技有限公司 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法

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Publication number Priority date Publication date Assignee Title
JP2007149679A (ja) * 2005-11-25 2007-06-14 Seiko Epson Corp 電気化学電池およびその製造方法
US8951601B2 (en) 2005-11-25 2015-02-10 Seiko Epson Corporation Electrochemical cell structure and method of fabrication
WO2011013275A1 (ja) * 2009-07-28 2011-02-03 シャープ株式会社 有機素子及びそれを備えた有機デバイス
US8853664B2 (en) 2009-07-28 2014-10-07 Sharp Kabushiki Kaisha Organic element and organic device including the same
JP2018510389A (ja) * 2015-01-12 2018-04-12 ドルビー ラボラトリーズ ライセンシング コーポレイション 画素タイル構造およびレイアウト
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Also Published As

Publication number Publication date
EP1949469A2 (en) 2008-07-30
GB0523163D0 (en) 2005-12-21
KR20080073331A (ko) 2008-08-08
WO2007074404A3 (en) 2007-11-15
US20090038683A1 (en) 2009-02-12
WO2007074404A2 (en) 2007-07-05
CN101331624A (zh) 2008-12-24
CN103199196A (zh) 2013-07-10

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