JP2009516382A - 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス - Google Patents
導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス Download PDFInfo
- Publication number
- JP2009516382A JP2009516382A JP2008540722A JP2008540722A JP2009516382A JP 2009516382 A JP2009516382 A JP 2009516382A JP 2008540722 A JP2008540722 A JP 2008540722A JP 2008540722 A JP2008540722 A JP 2008540722A JP 2009516382 A JP2009516382 A JP 2009516382A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- stack
- conductive layer
- compressible
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 115
- 238000000059 patterning Methods 0.000 title claims description 29
- 238000004049 embossing Methods 0.000 claims abstract description 49
- 239000010410 layer Substances 0.000 claims description 245
- 239000000758 substrate Substances 0.000 claims description 42
- 125000006850 spacer group Chemical group 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 7
- 239000012044 organic layer Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 239000011888 foil Substances 0.000 description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 description 10
- 239000005020 polyethylene terephthalate Substances 0.000 description 10
- 238000007639 printing Methods 0.000 description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 9
- 239000004926 polymethyl methacrylate Substances 0.000 description 9
- 238000007646 gravure printing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007766 curtain coating Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 229920001684 low density polyethylene Polymers 0.000 description 3
- 239000004702 low-density polyethylene Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004965 Silica aerogel Substances 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910001593 boehmite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 229920008285 Poly(ether ketone) PEK Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000013335 mesoporous material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000011234 nano-particulate material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000007783 nanoporous material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0523163.4A GB0523163D0 (en) | 2005-11-14 | 2005-11-14 | Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack |
| PCT/IB2006/003995 WO2007074404A2 (en) | 2005-11-14 | 2006-11-14 | Method and apparatus for patterning a conductive layer, and a device produced thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009516382A true JP2009516382A (ja) | 2009-04-16 |
| JP2009516382A5 JP2009516382A5 (enExample) | 2010-01-07 |
Family
ID=35516877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008540722A Pending JP2009516382A (ja) | 2005-11-14 | 2006-11-14 | 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090038683A1 (enExample) |
| EP (1) | EP1949469A2 (enExample) |
| JP (1) | JP2009516382A (enExample) |
| KR (1) | KR20080073331A (enExample) |
| CN (2) | CN101331624A (enExample) |
| GB (1) | GB0523163D0 (enExample) |
| WO (1) | WO2007074404A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007149679A (ja) * | 2005-11-25 | 2007-06-14 | Seiko Epson Corp | 電気化学電池およびその製造方法 |
| WO2011013275A1 (ja) * | 2009-07-28 | 2011-02-03 | シャープ株式会社 | 有機素子及びそれを備えた有機デバイス |
| JP2018510389A (ja) * | 2015-01-12 | 2018-04-12 | ドルビー ラボラトリーズ ライセンシング コーポレイション | 画素タイル構造およびレイアウト |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432723B (en) * | 2005-11-25 | 2010-12-08 | Seiko Epson Corp | Electrochemical cell and method of manufacture |
| GB2432721B (en) * | 2005-11-25 | 2011-06-22 | Seiko Epson Corp | Electrochemical cell structure and method of fabrication |
| US8343779B2 (en) * | 2007-04-19 | 2013-01-01 | Basf Se | Method for forming a pattern on a substrate and electronic device formed thereby |
| US20090283137A1 (en) * | 2008-05-15 | 2009-11-19 | Steven Thomas Croft | Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions |
| FR2934714B1 (fr) | 2008-07-31 | 2010-12-17 | Commissariat Energie Atomique | Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor. |
| GB2467316B (en) | 2009-01-28 | 2014-04-09 | Pragmatic Printing Ltd | Electronic devices, circuits and their manufacture |
| GB2462693B (en) * | 2008-07-31 | 2013-06-19 | Pragmatic Printing Ltd | Forming electrically insulative regions |
| WO2010017441A2 (en) * | 2008-08-07 | 2010-02-11 | Massachusetts Institute Of Technology | Method and apparatus for simultaneous lateral and vertical patterning of molecular organic films |
| US8586857B2 (en) * | 2008-11-04 | 2013-11-19 | Miasole | Combined diode, lead assembly incorporating an expansion joint |
| US9059351B2 (en) | 2008-11-04 | 2015-06-16 | Apollo Precision (Fujian) Limited | Integrated diode assemblies for photovoltaic modules |
| WO2010061035A1 (en) * | 2008-11-27 | 2010-06-03 | Upm-Kymmene Corporation | Embossing of electronic thin-film components |
| JP2010237375A (ja) * | 2009-03-31 | 2010-10-21 | Mitsui Chemicals Inc | 微細構造体およびそれを用いた光学素子 |
| US20100319765A1 (en) * | 2009-06-17 | 2010-12-23 | Korea University Research And Business Foundation | Photovoltaic devices |
| US8153528B1 (en) * | 2009-11-20 | 2012-04-10 | Integrated Photovoltaic, Inc. | Surface characteristics of graphite and graphite foils |
| US20110146778A1 (en) * | 2009-12-22 | 2011-06-23 | Miasole | Shielding of interior diode assemblies from compression forces in thin-film photovoltaic modules |
| US9139093B2 (en) * | 2010-12-02 | 2015-09-22 | Seiko Epson Corporation | Printed matter manufacturing method, printed matter manufacturing device, and printed matter |
| US20120305892A1 (en) * | 2010-12-08 | 2012-12-06 | Martin Thornton | Electronic device, method of manufacturing a device and apparatus for manufacturing a device |
| WO2012106433A2 (en) * | 2011-02-01 | 2012-08-09 | University Of South Florida | A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture |
| EP2833427A4 (en) | 2012-05-09 | 2016-02-24 | Lg Chemical Ltd | ORGANIC ELECTROCHEMICAL DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
| US9496458B2 (en) * | 2012-06-08 | 2016-11-15 | Cree, Inc. | Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same |
| WO2014145609A1 (en) | 2013-03-15 | 2014-09-18 | University Of South Florida | Mask-stack-shift method to fabricate organic solar array by spray |
| CN104681743B (zh) * | 2013-11-29 | 2017-02-15 | 清华大学 | 有机发光二极管的制备方法 |
| KR101474977B1 (ko) * | 2014-02-13 | 2014-12-22 | 한국기계연구원 | 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판 |
| KR101474980B1 (ko) * | 2014-02-13 | 2014-12-22 | 한국기계연구원 | 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판 |
| GB2526316B (en) * | 2014-05-20 | 2018-10-31 | Flexenable Ltd | Production of transistor arrays |
| KR102224824B1 (ko) * | 2014-05-30 | 2021-03-08 | 삼성전자 주식회사 | Ito 전극패턴을 포함하는 전자장치 및 그 전자장치의 제조방법 |
| US10023971B2 (en) * | 2015-03-03 | 2018-07-17 | The Trustees Of Boston College | Aluminum nanowire arrays and methods of preparation and use thereof |
| US20170179201A1 (en) * | 2015-12-16 | 2017-06-22 | General Electric Company | Processes for fabricating organic photodetectors and related photodetectors and systems |
| KR102660202B1 (ko) * | 2016-11-30 | 2024-04-26 | 삼성디스플레이 주식회사 | 윈도우 기판 및 이를 구비하는 표시 장치 |
| US10986435B2 (en) | 2017-04-18 | 2021-04-20 | Massachusetts Institute Of Technology | Electrostatic acoustic transducer utilized in a hearing aid or audio processing system |
| CN113745366B (zh) * | 2020-05-14 | 2024-03-12 | 杭州纤纳光电科技有限公司 | 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003504821A (ja) * | 1999-07-09 | 2003-02-04 | インスティチュート オブ マテリアルズ リサーチ アンド エンジニアリング | デバイス層の機械的パターン化 |
| WO2004032257A2 (de) * | 2002-10-02 | 2004-04-15 | Leonhard Kurz Gmbh & Co. Kg | Folie mit organischen halbleitern |
| WO2004055920A2 (en) * | 2002-12-14 | 2004-07-01 | Plastic Logic Limited | Electronic devices |
| JP2004314238A (ja) * | 2003-04-16 | 2004-11-11 | Canon Inc | ナノ構造体の製造方法及びナノ構造体 |
| JP2004319762A (ja) * | 2003-04-16 | 2004-11-11 | Canon Inc | ナノ構造体の製造方法及びナノ構造体 |
| WO2004111729A1 (en) * | 2003-06-19 | 2004-12-23 | Avantone Oy | A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component |
| WO2005004194A2 (en) * | 2003-07-02 | 2005-01-13 | Plastic Logic Limited | Organic rectifying diodes |
| WO2005031855A1 (en) * | 2003-09-29 | 2005-04-07 | International Business Machines Corporation | Fabrication method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3628243A (en) * | 1969-11-14 | 1971-12-21 | Bell Telephone Labor Inc | Fabrication of printed circuit |
| DE19652818A1 (de) * | 1996-12-18 | 1998-07-02 | Priesemuth W | Verfahren zum Herstellen einer Solarzelle sowie Solarzelle |
| US6294398B1 (en) * | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
| GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
| CA2567611A1 (en) * | 2004-05-28 | 2005-12-08 | Tir Systems Ltd. | Luminance enhancement apparatus and method |
| GB2416428A (en) * | 2004-07-19 | 2006-01-25 | Seiko Epson Corp | Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
| DE102005013125B4 (de) * | 2005-03-18 | 2008-12-18 | O-Flexx Technologies Gmbh | Verfahren zur Herstellung von elektronischen Einheiten in einer mehrlagigen Ausgangsstruktur sowie Verwendung dieser Ausgangstruktur im Verfahren |
| DE102005022000B8 (de) * | 2005-05-09 | 2010-08-12 | O-Flexx Technologies Gmbh | Verfahren zur Herstellung von elektronischen Einheiten aus zwei mehrlagigen Ausgangsstrukturen und deren Verwendung |
-
2005
- 2005-11-14 GB GBGB0523163.4A patent/GB0523163D0/en not_active Ceased
-
2006
- 2006-11-14 KR KR1020087014313A patent/KR20080073331A/ko not_active Ceased
- 2006-11-14 JP JP2008540722A patent/JP2009516382A/ja active Pending
- 2006-11-14 US US12/084,749 patent/US20090038683A1/en not_active Abandoned
- 2006-11-14 WO PCT/IB2006/003995 patent/WO2007074404A2/en not_active Ceased
- 2006-11-14 CN CNA2006800424695A patent/CN101331624A/zh active Pending
- 2006-11-14 EP EP06848961A patent/EP1949469A2/en not_active Withdrawn
- 2006-11-14 CN CN2013100775890A patent/CN103199196A/zh active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003504821A (ja) * | 1999-07-09 | 2003-02-04 | インスティチュート オブ マテリアルズ リサーチ アンド エンジニアリング | デバイス層の機械的パターン化 |
| WO2004032257A2 (de) * | 2002-10-02 | 2004-04-15 | Leonhard Kurz Gmbh & Co. Kg | Folie mit organischen halbleitern |
| WO2004055920A2 (en) * | 2002-12-14 | 2004-07-01 | Plastic Logic Limited | Electronic devices |
| JP2006510210A (ja) * | 2002-12-14 | 2006-03-23 | プラスティック ロジック リミテッド | 電子装置 |
| JP2004314238A (ja) * | 2003-04-16 | 2004-11-11 | Canon Inc | ナノ構造体の製造方法及びナノ構造体 |
| JP2004319762A (ja) * | 2003-04-16 | 2004-11-11 | Canon Inc | ナノ構造体の製造方法及びナノ構造体 |
| WO2004111729A1 (en) * | 2003-06-19 | 2004-12-23 | Avantone Oy | A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component |
| JP2007527106A (ja) * | 2003-06-19 | 2007-09-20 | アバントネ オイ | 薄膜電子部品の製造方法および製造装置ならびに薄膜電子部品 |
| WO2005004194A2 (en) * | 2003-07-02 | 2005-01-13 | Plastic Logic Limited | Organic rectifying diodes |
| WO2005031855A1 (en) * | 2003-09-29 | 2005-04-07 | International Business Machines Corporation | Fabrication method |
| JP2007507860A (ja) * | 2003-09-29 | 2007-03-29 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 製造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007149679A (ja) * | 2005-11-25 | 2007-06-14 | Seiko Epson Corp | 電気化学電池およびその製造方法 |
| US8951601B2 (en) | 2005-11-25 | 2015-02-10 | Seiko Epson Corporation | Electrochemical cell structure and method of fabrication |
| WO2011013275A1 (ja) * | 2009-07-28 | 2011-02-03 | シャープ株式会社 | 有機素子及びそれを備えた有機デバイス |
| US8853664B2 (en) | 2009-07-28 | 2014-10-07 | Sharp Kabushiki Kaisha | Organic element and organic device including the same |
| JP2018510389A (ja) * | 2015-01-12 | 2018-04-12 | ドルビー ラボラトリーズ ライセンシング コーポレイション | 画素タイル構造およびレイアウト |
| US10700052B2 (en) | 2015-01-12 | 2020-06-30 | Dolby Laboratories Licensing Corporation | Pixel tile structures and layouts |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1949469A2 (en) | 2008-07-30 |
| GB0523163D0 (en) | 2005-12-21 |
| KR20080073331A (ko) | 2008-08-08 |
| WO2007074404A3 (en) | 2007-11-15 |
| US20090038683A1 (en) | 2009-02-12 |
| WO2007074404A2 (en) | 2007-07-05 |
| CN101331624A (zh) | 2008-12-24 |
| CN103199196A (zh) | 2013-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009516382A (ja) | 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス | |
| JP6352906B2 (ja) | 第1の電極、活性層、および第2の電極を含むタイプのスタックを構成する方法 | |
| Lian et al. | Highly conductive silver nanowire transparent electrode by selective welding for organic light emitting diode | |
| US8951601B2 (en) | Electrochemical cell structure and method of fabrication | |
| JP5560281B2 (ja) | 有機デバイスの電気コンタクトを形成するための溶液処理方法 | |
| US20110180127A1 (en) | Solar cell fabrication by nanoimprint lithography | |
| CN107925005B (zh) | 用于制造第一电极/有源层/第二电极的叠层的方法 | |
| CN101034667A (zh) | 通过将材料喷墨印刷到堤坝结构中的器件制造和压印设备 | |
| WO2004051756A2 (de) | Photovoltaisches bauelement und herstellungsverfahren dazu | |
| WO2006078321A1 (en) | Tapered masks for deposition of materiel for organic electronic devices | |
| EP3214655A1 (en) | Thin-film transistor and method for producing same | |
| Youn et al. | Printed nanostructures for organic photovoltaic cells and solution‐processed polymer light‐emitting diodes | |
| Takakuwa et al. | Micropatterning of electrodes by microcontact printing method and application to thin film transistor devices | |
| KR101170919B1 (ko) | 표면 플라즈몬 공명 현상을 이용한 태양전지 | |
| KR101353888B1 (ko) | 나노 패턴이 형성된 정공 추출층을 포함한 플렉서블 유기태양전지 제조방법 및 이에 의해 제조된 플렉서블 유기태양전지 | |
| CN117015833B (zh) | 与金属氧化物纳米颗粒一起烧结的银纳米线的柔性透明电极 | |
| Piliego et al. | Organic light emitting diodes with highly conductive micropatterned polymer anodes | |
| JP2020506532A (ja) | 積層体を形成するための方法および積層体 | |
| NL2006756C2 (en) | Method for forming an electrode layer with a low work function, and electrode layer. | |
| KR20090111725A (ko) | 투명 유기박막 태양전지 | |
| KR20090069947A (ko) | 유연한 유기 태양전지 및 그 제조방법 | |
| Koidis et al. | Optimization of active nanomaterials and transparent electrodes using printing and vacuum processes | |
| KR20150068293A (ko) | 미세 구조체를 갖는 기판, 및 그 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091112 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091112 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120823 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120828 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121031 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121107 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130204 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130903 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140408 |