CN101331624A - 布图传导层的方法和装置及其生产的部件 - Google Patents

布图传导层的方法和装置及其生产的部件 Download PDF

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Publication number
CN101331624A
CN101331624A CNA2006800424695A CN200680042469A CN101331624A CN 101331624 A CN101331624 A CN 101331624A CN A2006800424695 A CNA2006800424695 A CN A2006800424695A CN 200680042469 A CN200680042469 A CN 200680042469A CN 101331624 A CN101331624 A CN 101331624A
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CN
China
Prior art keywords
lamination
conducting shell
layer
aforementioned arbitrary
compressible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800424695A
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English (en)
Chinese (zh)
Inventor
H·瓦尔特
T·贝尔莱因
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF Schweiz AG
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Ciba Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Holding AG filed Critical Ciba Holding AG
Publication of CN101331624A publication Critical patent/CN101331624A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621Providing a shape to conductive layers, e.g. patterning or selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNA2006800424695A 2005-11-14 2006-11-14 布图传导层的方法和装置及其生产的部件 Pending CN101331624A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0523163.4 2005-11-14
GBGB0523163.4A GB0523163D0 (en) 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2013100775890A Division CN103199196A (zh) 2005-11-14 2006-11-14 布图传导层的方法和器件及其生产的部件

Publications (1)

Publication Number Publication Date
CN101331624A true CN101331624A (zh) 2008-12-24

Family

ID=35516877

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2006800424695A Pending CN101331624A (zh) 2005-11-14 2006-11-14 布图传导层的方法和装置及其生产的部件
CN2013100775890A Pending CN103199196A (zh) 2005-11-14 2006-11-14 布图传导层的方法和器件及其生产的部件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2013100775890A Pending CN103199196A (zh) 2005-11-14 2006-11-14 布图传导层的方法和器件及其生产的部件

Country Status (7)

Country Link
US (1) US20090038683A1 (enExample)
EP (1) EP1949469A2 (enExample)
JP (1) JP2009516382A (enExample)
KR (1) KR20080073331A (enExample)
CN (2) CN101331624A (enExample)
GB (1) GB0523163D0 (enExample)
WO (1) WO2007074404A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681743A (zh) * 2013-11-29 2015-06-03 清华大学 有机发光二极管的制备方法

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2432723B (en) * 2005-11-25 2010-12-08 Seiko Epson Corp Electrochemical cell and method of manufacture
GB2432722A (en) * 2005-11-25 2007-05-30 Seiko Epson Corp Electrochemical cell and method of manufacture
GB2432721B (en) * 2005-11-25 2011-06-22 Seiko Epson Corp Electrochemical cell structure and method of fabrication
US8343779B2 (en) * 2007-04-19 2013-01-01 Basf Se Method for forming a pattern on a substrate and electronic device formed thereby
US20090283137A1 (en) * 2008-05-15 2009-11-19 Steven Thomas Croft Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions
FR2934714B1 (fr) 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
WO2010017441A2 (en) * 2008-08-07 2010-02-11 Massachusetts Institute Of Technology Method and apparatus for simultaneous lateral and vertical patterning of molecular organic films
US8586857B2 (en) * 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
US9059351B2 (en) 2008-11-04 2015-06-16 Apollo Precision (Fujian) Limited Integrated diode assemblies for photovoltaic modules
WO2010061035A1 (en) * 2008-11-27 2010-06-03 Upm-Kymmene Corporation Embossing of electronic thin-film components
JP2010237375A (ja) * 2009-03-31 2010-10-21 Mitsui Chemicals Inc 微細構造体およびそれを用いた光学素子
US20100319765A1 (en) * 2009-06-17 2010-12-23 Korea University Research And Business Foundation Photovoltaic devices
WO2011013275A1 (ja) * 2009-07-28 2011-02-03 シャープ株式会社 有機素子及びそれを備えた有機デバイス
US8153528B1 (en) * 2009-11-20 2012-04-10 Integrated Photovoltaic, Inc. Surface characteristics of graphite and graphite foils
US20110146778A1 (en) * 2009-12-22 2011-06-23 Miasole Shielding of interior diode assemblies from compression forces in thin-film photovoltaic modules
US9139093B2 (en) * 2010-12-02 2015-09-22 Seiko Epson Corporation Printed matter manufacturing method, printed matter manufacturing device, and printed matter
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
WO2012106433A2 (en) * 2011-02-01 2012-08-09 University Of South Florida A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture
EP2833427A4 (en) 2012-05-09 2016-02-24 Lg Chemical Ltd ORGANIC ELECTROCHEMICAL DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
WO2014145609A1 (en) 2013-03-15 2014-09-18 University Of South Florida Mask-stack-shift method to fabricate organic solar array by spray
KR101474977B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
KR101474980B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
GB2526316B (en) * 2014-05-20 2018-10-31 Flexenable Ltd Production of transistor arrays
KR102224824B1 (ko) * 2014-05-30 2021-03-08 삼성전자 주식회사 Ito 전극패턴을 포함하는 전자장치 및 그 전자장치의 제조방법
WO2016115040A1 (en) 2015-01-12 2016-07-21 Dolby Laboratories Licensing Corporation Pixel tile structures and layouts
US10023971B2 (en) * 2015-03-03 2018-07-17 The Trustees Of Boston College Aluminum nanowire arrays and methods of preparation and use thereof
US20170179201A1 (en) * 2015-12-16 2017-06-22 General Electric Company Processes for fabricating organic photodetectors and related photodetectors and systems
KR102660202B1 (ko) * 2016-11-30 2024-04-26 삼성디스플레이 주식회사 윈도우 기판 및 이를 구비하는 표시 장치
US10986435B2 (en) 2017-04-18 2021-04-20 Massachusetts Institute Of Technology Electrostatic acoustic transducer utilized in a hearing aid or audio processing system
CN113745366B (zh) * 2020-05-14 2024-03-12 杭州纤纳光电科技有限公司 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3628243A (en) * 1969-11-14 1971-12-21 Bell Telephone Labor Inc Fabrication of printed circuit
DE19652818A1 (de) * 1996-12-18 1998-07-02 Priesemuth W Verfahren zum Herstellen einer Solarzelle sowie Solarzelle
CA2343227A1 (en) * 1999-07-09 2001-01-18 Institute Of Materials Research & Engineering Mechanical patterning of a device layer
US6294398B1 (en) * 1999-11-23 2001-09-25 The Trustees Of Princeton University Method for patterning devices
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
WO2004032257A2 (de) * 2002-10-02 2004-04-15 Leonhard Kurz Gmbh & Co. Kg Folie mit organischen halbleitern
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
JP2004319762A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2004314238A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
FI20030919L (fi) * 2003-06-19 2004-12-20 Avantone Oy Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti
GB0315477D0 (en) * 2003-07-02 2003-08-06 Plastic Logic Ltd Rectifying diodes
KR100791443B1 (ko) * 2003-09-29 2008-01-10 인터내셔널 비지네스 머신즈 코포레이션 제조 방법
CA2567611A1 (en) * 2004-05-28 2005-12-08 Tir Systems Ltd. Luminance enhancement apparatus and method
GB2416428A (en) * 2004-07-19 2006-01-25 Seiko Epson Corp Method for fabricating a semiconductor element from a dispersion of semiconductor particles
DE102005013125B4 (de) * 2005-03-18 2008-12-18 O-Flexx Technologies Gmbh Verfahren zur Herstellung von elektronischen Einheiten in einer mehrlagigen Ausgangsstruktur sowie Verwendung dieser Ausgangstruktur im Verfahren
DE102005022000B8 (de) * 2005-05-09 2010-08-12 O-Flexx Technologies Gmbh Verfahren zur Herstellung von elektronischen Einheiten aus zwei mehrlagigen Ausgangsstrukturen und deren Verwendung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681743A (zh) * 2013-11-29 2015-06-03 清华大学 有机发光二极管的制备方法
CN104681743B (zh) * 2013-11-29 2017-02-15 清华大学 有机发光二极管的制备方法

Also Published As

Publication number Publication date
JP2009516382A (ja) 2009-04-16
EP1949469A2 (en) 2008-07-30
GB0523163D0 (en) 2005-12-21
KR20080073331A (ko) 2008-08-08
WO2007074404A3 (en) 2007-11-15
US20090038683A1 (en) 2009-02-12
WO2007074404A2 (en) 2007-07-05
CN103199196A (zh) 2013-07-10

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Application publication date: 20081224