JP2009509037A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009509037A5 JP2009509037A5 JP2008531153A JP2008531153A JP2009509037A5 JP 2009509037 A5 JP2009509037 A5 JP 2009509037A5 JP 2008531153 A JP2008531153 A JP 2008531153A JP 2008531153 A JP2008531153 A JP 2008531153A JP 2009509037 A5 JP2009509037 A5 JP 2009509037A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- group
- phthalocyanine
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 125000002524 organometallic group Chemical group 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002070 nanowire Substances 0.000 claims description 10
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 239000004809 Teflon Substances 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000011152 fibreglass Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010445 mica Substances 0.000 claims description 4
- 229910052618 mica group Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- KMHSUNDEGHRBNV-UHFFFAOYSA-N 2,4-dichloropyrimidine-5-carbonitrile Chemical group ClC1=NC=C(C#N)C(Cl)=N1 KMHSUNDEGHRBNV-UHFFFAOYSA-N 0.000 claims description 3
- WDEQGLDWZMIMJM-UHFFFAOYSA-N benzyl 4-hydroxy-2-(hydroxymethyl)pyrrolidine-1-carboxylate Chemical compound OCC1CC(O)CN1C(=O)OCC1=CC=CC=C1 WDEQGLDWZMIMJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 6
- 150000002739 metals Chemical class 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 229910052743 krypton Inorganic materials 0.000 claims 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052754 neon Inorganic materials 0.000 claims 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 3
- 229910052724 xenon Inorganic materials 0.000 claims 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/228,784 US7341944B2 (en) | 2005-09-15 | 2005-09-15 | Methods for synthesis of metal nanowires |
| PCT/US2006/034002 WO2007037906A2 (en) | 2005-09-15 | 2006-08-31 | Methods for synthesis of metal nanowires |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009509037A JP2009509037A (ja) | 2009-03-05 |
| JP2009509037A5 true JP2009509037A5 (https=) | 2009-08-20 |
| JP4429369B2 JP4429369B2 (ja) | 2010-03-10 |
Family
ID=37855751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008531153A Expired - Fee Related JP4429369B2 (ja) | 2005-09-15 | 2006-08-31 | 金属ナノワイヤーの合成方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7341944B2 (https=) |
| JP (1) | JP4429369B2 (https=) |
| WO (1) | WO2007037906A2 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE532217T1 (de) * | 2005-08-12 | 2011-11-15 | Cambrios Technologies Corp | Verfahren zur herstellung von transparente leiter auf nanodrahtbasis |
| DE602006006897D1 (de) * | 2006-03-31 | 2009-07-02 | Sony Deutschland Gmbh | System zum Nachweis eines Lecks in einer Batterie |
| TWI426531B (zh) * | 2006-10-12 | 2014-02-11 | 坎畢歐科技公司 | 以奈米線為主之透明導體及其應用 |
| US8018568B2 (en) | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
| CN103777417B (zh) | 2007-04-20 | 2017-01-18 | 凯姆控股有限公司 | 复合透明导体及其形成方法 |
| US20090011604A1 (en) * | 2007-07-05 | 2009-01-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Photon induced removal of copper |
| DE102008046858A1 (de) * | 2008-09-12 | 2010-03-18 | Epcos Ag | Keramikmaterial, Verfahren zur Herstellung eines Keramikmaterials, elektrokeramisches Bauelement umfassend das Keramikmaterial |
| US8470204B2 (en) * | 2009-04-23 | 2013-06-25 | Dic Corporation | Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires |
| KR101417882B1 (ko) * | 2009-11-26 | 2014-07-09 | 디아이씨 가부시끼가이샤 | 광전 변환 소자용 재료 및 광전 변환 소자 |
| WO2011097470A2 (en) * | 2010-02-05 | 2011-08-11 | Cambrios Technologies Corporation | Photosensitive ink compositions and transparent conductors and method of using the same |
| US8651048B2 (en) * | 2010-04-21 | 2014-02-18 | University Of North Texas | Controlled deposition of metal and metal cluster ions by surface field patterning in soft-landing devices |
| US10876202B2 (en) | 2010-04-21 | 2020-12-29 | University Of North Texas | Controlled deposition of metal and metal cluster ions by surface field patterning in soft-landing devices |
| CN103429668B (zh) * | 2011-05-19 | 2014-11-26 | Dic株式会社 | 酞菁纳米棒及光电转换元件 |
| SI23768B (sl) | 2011-06-24 | 2020-07-31 | Institut "Jožef Stefan" | Postopek za sintezo kvazi enodimenzionalnih struktur 4d in 5d (Nb, Mo Ta, W) prehodnih kovin |
| CN103255374A (zh) * | 2012-09-19 | 2013-08-21 | 苏州大学 | 一种制备有序一维有机纳米线阵列的方法 |
| US10193162B2 (en) * | 2014-03-27 | 2019-01-29 | Kumiai Chemical Industry Co., Ltd. | Electrode catalyst and method for producing the same |
| CN105294706B (zh) * | 2015-11-03 | 2018-09-07 | 昆明学院 | 新晶体结构酞菁铁纳米线及其制备方法 |
| CN105779938A (zh) * | 2016-03-21 | 2016-07-20 | 王烨 | 利用薄膜沉积制备纳米柱形结构氧化锡的方法 |
| EP3612210A4 (en) | 2017-04-19 | 2021-01-27 | Board Of Regents, The University Of Texas System | MANIPULATED ANTIGEN RECEPTORS EXPRESSING IMMUNE CELLS |
| US12473336B2 (en) | 2018-02-21 | 2025-11-18 | Board Of Regents, The University Of Texas System | Methods for activation and expansion of natural killer cells and uses thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872422A (en) | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
| US6838720B2 (en) | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
| US6740900B2 (en) * | 2002-02-27 | 2004-05-25 | Konica Corporation | Organic thin-film transistor and manufacturing method for the same |
| JP3747440B2 (ja) * | 2003-03-10 | 2006-02-22 | 独立行政法人科学技術振興機構 | 金属ナノワイヤーの製造方法 |
| US8541054B2 (en) * | 2003-09-08 | 2013-09-24 | Honda Motor Co., Ltd | Methods for preparation of one-dimensional carbon nanostructures |
| US7344753B2 (en) * | 2003-09-19 | 2008-03-18 | The Board Of Trustees Of The University Of Illinois | Nanostructures including a metal |
-
2005
- 2005-09-15 US US11/228,784 patent/US7341944B2/en not_active Expired - Lifetime
-
2006
- 2006-08-31 JP JP2008531153A patent/JP4429369B2/ja not_active Expired - Fee Related
- 2006-08-31 WO PCT/US2006/034002 patent/WO2007037906A2/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009509037A5 (https=) | ||
| CN102161482B (zh) | 一种制备石墨烯的方法 | |
| JP4589439B2 (ja) | カーボンナノチューブ複合物の製造方法 | |
| JP4589438B2 (ja) | カーボンナノチューブ複合物 | |
| CN103215555B (zh) | 一种采用共溅射法制备非晶-纳米晶复合膜的方法 | |
| CN102958832B (zh) | 石墨烯制造设备及方法 | |
| KR102100925B1 (ko) | 기판 구조체, 상기 기판 구조체를 형성하는 방법, 및 이를 구비하는 전기소자 | |
| CN102994976B (zh) | 多元衬底、基于多元衬底的层数连续可调的石墨烯、及其制备方法 | |
| KR101563231B1 (ko) | 나노시트-무기물 적층 다공성 나노구조체 및 이의 제조 방법 | |
| KR20120119789A (ko) | 그래핀 다중층의 제조방법 | |
| KR20090029621A (ko) | 그라펜 패턴 및 그의 형성방법 | |
| TW201320165A (zh) | 半導體基材上石墨烯之直接生成 | |
| CN102392226A (zh) | 一种石墨烯/氮化硼异质薄膜的制备方法 | |
| CN106276863A (zh) | 一种转移石墨烯的方法 | |
| JP2012020915A (ja) | 透明導電膜の形成方法及び透明導電膜 | |
| CN103668106B (zh) | 一种制备单层六角氮化硼的方法 | |
| CN104843689A (zh) | 一种定位制备石墨烯薄膜的方法 | |
| CN107954404A (zh) | 一种制备石墨烯与六角氮化硼复合薄膜材料的方法 | |
| CN105377753B (zh) | 利用覆盖构件制造石墨烯的方法和制造包含该石墨烯的电子元件的方法 | |
| CN103353437B (zh) | 直观显示金属衬底上cvd石墨烯表面褶皱分布的方法 | |
| CN103906707B (zh) | 石墨烯纳米带的制备方法 | |
| TW201031482A (en) | Manufacturing method of inorganic nano-particles and a device using the same | |
| KR101784432B1 (ko) | 방향족 유도체 화합물과 지방족 유도체 화합물을 이용한 그래핀의 제조방법 및 그를 포함하는 전자소자의 제조방법 | |
| CN105008275A (zh) | 石墨烯的晶界探测方法及利用该方法的装置 | |
| CN113913779A (zh) | 高红外元件及其制备方法和应用 |