JP2009508170A - マイクロリソグラフィ露光システムの光学システム - Google Patents

マイクロリソグラフィ露光システムの光学システム Download PDF

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Publication number
JP2009508170A
JP2009508170A JP2008530521A JP2008530521A JP2009508170A JP 2009508170 A JP2009508170 A JP 2009508170A JP 2008530521 A JP2008530521 A JP 2008530521A JP 2008530521 A JP2008530521 A JP 2008530521A JP 2009508170 A JP2009508170 A JP 2009508170A
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JP
Japan
Prior art keywords
optical system
optical
axis
birefringent
group
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Pending
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JP2008530521A
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English (en)
Japanese (ja)
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JP2009508170A5 (https=
Inventor
トッツェク，ミヒャエル
ベダー，スーザン
クラウス，ヴィルフリート
フェルトマン，ヘイコ
クラーマー，ダニエル
ドドック，オーレリアン
Original Assignee
カール・ツァイス・エスエムティー・アーゲー
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Publication of JP2009508170A publication Critical patent/JP2009508170A/ja
Publication of JP2009508170A5 publication Critical patent/JP2009508170A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
JP2008530521A 2005-09-14 2006-09-13 マイクロリソグラフィ露光システムの光学システム Pending JP2009508170A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71757605P 2005-09-14 2005-09-14
PCT/EP2006/066332 WO2007031544A1 (en) 2005-09-14 2006-09-13 Optical system of a microlithographic exposure system

Publications (2)

Publication Number Publication Date
JP2009508170A true JP2009508170A (ja) 2009-02-26
JP2009508170A5 JP2009508170A5 (https=) 2009-11-05

Family

ID=37499493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008530521A Pending JP2009508170A (ja) 2005-09-14 2006-09-13 マイクロリソグラフィ露光システムの光学システム

Country Status (7)

Country Link
US (1) US8031326B2 (https=)
EP (2) EP2085824A1 (https=)
JP (1) JP2009508170A (https=)
KR (1) KR20080043835A (https=)
CN (2) CN101263432B (https=)
TW (1) TW200717046A (https=)
WO (1) WO2007031544A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011508409A (ja) * 2007-11-20 2011-03-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学系
JP2014179619A (ja) * 2013-03-14 2014-09-25 Carl Zeiss Smt Gmbh マイクロリソグラフィ投影露光装置のための光学系
JP2024014793A (ja) * 2022-07-20 2024-02-01 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィ装置用の光学素子を製造する方法

Families Citing this family (16)

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US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102006038454A1 (de) 2005-12-23 2007-07-05 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
WO2008104192A1 (en) 2007-02-28 2008-09-04 Carl Zeiss Smt Ag Catadioptric projection objective with pupil correction
WO2008110501A1 (de) * 2007-03-13 2008-09-18 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage
WO2008119794A1 (en) 2007-04-03 2008-10-09 Carl Zeiss Smt Ag Optical system, in particular illumination device or projection objective of a microlithographic projection exposure apparatus
DE102007019831B4 (de) 2007-04-25 2012-03-01 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
US20090091728A1 (en) * 2007-09-28 2009-04-09 Carl Zeiss Smt Ag Compact High Aperture Folded Catadioptric Projection Objective
DE102008043321A1 (de) 2008-01-17 2009-07-23 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102009011329A1 (de) 2009-03-05 2010-09-09 Carl Zeiss Smt Ag Kompaktes katadioptrisches Projektionsobjektiv für die Immersionslithographie sowie Projektionsbelichtungsverfahren
US8922753B2 (en) 2013-03-14 2014-12-30 Carl Zeiss Smt Gmbh Optical system for a microlithographic projection exposure apparatus
CN107991728B (zh) * 2013-08-23 2020-06-16 科磊股份有限公司 宽带及宽视场角补偿器
DE102015223982A1 (de) 2015-12-02 2017-06-08 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage oder einer Waferinspektionsanlage
CN111830616B (zh) * 2019-04-16 2021-11-09 致晶科技（北京）有限公司 利用晶体制成的消色差相位延迟器和制作方法
DE102023119826A1 (de) * 2023-07-26 2025-01-30 TRUMPF Lasersystems for Semiconductor Manufacturing SE Depolarisations-Kompensator und optisches System

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JP2003279854A (ja) * 2002-03-26 2003-10-02 Canon Inc 投影光学系、露光装置、デバイス製造方法及びデバイス
JP2004535603A (ja) * 2001-07-18 2004-11-25 カール・ツアイス・エスエムテイ・アーゲー 結晶レンズを備えた対物レンズにおける複屈折の補正
WO2005001527A1 (de) * 2003-06-27 2005-01-06 Carl Zeiss Smt Ag Korrektureinrichtung zur kompensation von störungen der polarisationsverteilung sowie projektionsobjektiv für die mikrolithographie

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JP3014811B2 (ja) * 1991-08-08 2000-02-28 富士通株式会社 偏光子及び該偏光子を備えた変調器
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
US6829041B2 (en) * 1997-07-29 2004-12-07 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus having the same
DE19807120A1 (de) 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
US6630117B2 (en) * 1999-06-04 2003-10-07 Corning Incorporated Making a dispersion managing crystal
EP1371119A4 (en) * 2001-03-02 2006-10-11 Corning Inc UV EXCIMER LASER WITH HIGH REPLACEMENT RATE
JP2004526331A (ja) 2001-05-15 2004-08-26 カール・ツアイス・エスエムテイ・アーゲー フッ化物結晶レンズを含む対物レンズ
US6970232B2 (en) * 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
US6950243B2 (en) * 2002-04-19 2005-09-27 Lockheed Martin Corporation Refractive multispectral objective lens system and methods of selecting optical materials therefor
US7154669B2 (en) * 2002-08-05 2006-12-26 Asml Holding N.V. Method and system for correction of intrinsic birefringence in UV microlithography
WO2004059266A2 (en) * 2002-12-20 2004-07-15 Hinds Instruments, Inc Out-of-plane birefringence measurement
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
DE10355725A1 (de) 2003-11-28 2005-06-30 Carl Zeiss Smt Ag Optisches System sowie Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauteile
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7301707B2 (en) 2004-09-03 2007-11-27 Carl Zeiss Smt Ag Projection optical system and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535603A (ja) * 2001-07-18 2004-11-25 カール・ツアイス・エスエムテイ・アーゲー 結晶レンズを備えた対物レンズにおける複屈折の補正
JP2003279854A (ja) * 2002-03-26 2003-10-02 Canon Inc 投影光学系、露光装置、デバイス製造方法及びデバイス
WO2005001527A1 (de) * 2003-06-27 2005-01-06 Carl Zeiss Smt Ag Korrektureinrichtung zur kompensation von störungen der polarisationsverteilung sowie projektionsobjektiv für die mikrolithographie

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011508409A (ja) * 2007-11-20 2011-03-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学系
US8379188B2 (en) 2007-11-20 2013-02-19 Carl Zeiss Smt Gmbh Optical system
JP2014179619A (ja) * 2013-03-14 2014-09-25 Carl Zeiss Smt Gmbh マイクロリソグラフィ投影露光装置のための光学系
JP2024014793A (ja) * 2022-07-20 2024-02-01 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィ装置用の光学素子を製造する方法
JP7738034B2 (ja) 2022-07-20 2025-09-11 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィ装置用の光学素子を製造する方法

Also Published As

Publication number Publication date
KR20080043835A (ko) 2008-05-19
US20080204877A1 (en) 2008-08-28
CN101263432B (zh) 2011-07-27
WO2007031544A1 (en) 2007-03-22
TW200717046A (en) 2007-05-01
US8031326B2 (en) 2011-10-04
CN101263432A (zh) 2008-09-10
CN102207691B (zh) 2015-02-25
CN102207691A (zh) 2011-10-05
EP1924890A1 (en) 2008-05-28
EP2085824A1 (en) 2009-08-05

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