CN101263432B - 微光刻曝光系统的光学系统 - Google Patents
微光刻曝光系统的光学系统 Download PDFInfo
- Publication number
- CN101263432B CN101263432B CN2006800339207A CN200680033920A CN101263432B CN 101263432 B CN101263432 B CN 101263432B CN 2006800339207 A CN2006800339207 A CN 2006800339207A CN 200680033920 A CN200680033920 A CN 200680033920A CN 101263432 B CN101263432 B CN 101263432B
- Authority
- CN
- China
- Prior art keywords
- optical system
- axis
- birefringence
- optics
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71757605P | 2005-09-14 | 2005-09-14 | |
| US60/717,576 | 2005-09-14 | ||
| PCT/EP2006/066332 WO2007031544A1 (en) | 2005-09-14 | 2006-09-13 | Optical system of a microlithographic exposure system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110147181.7A Division CN102207691B (zh) | 2005-09-14 | 2006-09-13 | 微光刻曝光系统的光学系统 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101263432A CN101263432A (zh) | 2008-09-10 |
| CN101263432B true CN101263432B (zh) | 2011-07-27 |
Family
ID=37499493
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800339207A Active CN101263432B (zh) | 2005-09-14 | 2006-09-13 | 微光刻曝光系统的光学系统 |
| CN201110147181.7A Expired - Fee Related CN102207691B (zh) | 2005-09-14 | 2006-09-13 | 微光刻曝光系统的光学系统 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110147181.7A Expired - Fee Related CN102207691B (zh) | 2005-09-14 | 2006-09-13 | 微光刻曝光系统的光学系统 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8031326B2 (https=) |
| EP (2) | EP2085824A1 (https=) |
| JP (1) | JP2009508170A (https=) |
| KR (1) | KR20080043835A (https=) |
| CN (2) | CN101263432B (https=) |
| TW (1) | TW200717046A (https=) |
| WO (1) | WO2007031544A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| US20080151364A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
| KR20160085375A (ko) | 2004-05-17 | 2016-07-15 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| DE102006038454A1 (de) | 2005-12-23 | 2007-07-05 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
| WO2008104192A1 (en) | 2007-02-28 | 2008-09-04 | Carl Zeiss Smt Ag | Catadioptric projection objective with pupil correction |
| WO2008110501A1 (de) * | 2007-03-13 | 2008-09-18 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage |
| WO2008119794A1 (en) | 2007-04-03 | 2008-10-09 | Carl Zeiss Smt Ag | Optical system, in particular illumination device or projection objective of a microlithographic projection exposure apparatus |
| DE102007019831B4 (de) | 2007-04-25 | 2012-03-01 | Carl Zeiss Smt Gmbh | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
| US20090091728A1 (en) * | 2007-09-28 | 2009-04-09 | Carl Zeiss Smt Ag | Compact High Aperture Folded Catadioptric Projection Objective |
| DE102007055567A1 (de) * | 2007-11-20 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System |
| DE102008043321A1 (de) | 2008-01-17 | 2009-07-23 | Carl Zeiss Smt Ag | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102009011329A1 (de) | 2009-03-05 | 2010-09-09 | Carl Zeiss Smt Ag | Kompaktes katadioptrisches Projektionsobjektiv für die Immersionslithographie sowie Projektionsbelichtungsverfahren |
| US8922753B2 (en) | 2013-03-14 | 2014-12-30 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus |
| DE102013204453B4 (de) * | 2013-03-14 | 2019-11-21 | Carl Zeiss Smt Gmbh | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente |
| CN107991728B (zh) * | 2013-08-23 | 2020-06-16 | 科磊股份有限公司 | 宽带及宽视场角补偿器 |
| DE102015223982A1 (de) | 2015-12-02 | 2017-06-08 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage oder einer Waferinspektionsanlage |
| CN111830616B (zh) * | 2019-04-16 | 2021-11-09 | 致晶科技(北京)有限公司 | 利用晶体制成的消色差相位延迟器和制作方法 |
| DE102022118146B3 (de) * | 2022-07-20 | 2023-12-07 | Carl Zeiss Jena Gmbh | Verfahren zum Herstellen eines optischen Elements für eine Lithographieanlage |
| DE102023119826A1 (de) * | 2023-07-26 | 2025-01-30 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Depolarisations-Kompensator und optisches System |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564958A (zh) * | 2002-08-05 | 2005-01-12 | Asml控股股份有限公司 | 在紫外微光刻术中修正固有双折射的方法和系统 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3014811B2 (ja) * | 1991-08-08 | 2000-02-28 | 富士通株式会社 | 偏光子及び該偏光子を備えた変調器 |
| DE19535392A1 (de) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit |
| US6829041B2 (en) * | 1997-07-29 | 2004-12-07 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus having the same |
| DE19807120A1 (de) | 1998-02-20 | 1999-08-26 | Zeiss Carl Fa | Optisches System mit Polarisationskompensator |
| US6630117B2 (en) * | 1999-06-04 | 2003-10-07 | Corning Incorporated | Making a dispersion managing crystal |
| EP1371119A4 (en) * | 2001-03-02 | 2006-10-11 | Corning Inc | UV EXCIMER LASER WITH HIGH REPLACEMENT RATE |
| JP2004526331A (ja) | 2001-05-15 | 2004-08-26 | カール・ツアイス・エスエムテイ・アーゲー | フッ化物結晶レンズを含む対物レンズ |
| DE10133841A1 (de) * | 2001-07-18 | 2003-02-06 | Zeiss Carl | Objektiv mit Kristall-Linsen |
| US6970232B2 (en) * | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
| US7453641B2 (en) | 2001-10-30 | 2008-11-18 | Asml Netherlands B.V. | Structures and methods for reducing aberration in optical systems |
| JP4350341B2 (ja) * | 2002-03-26 | 2009-10-21 | キヤノン株式会社 | 光学系及び露光装置 |
| US6950243B2 (en) * | 2002-04-19 | 2005-09-27 | Lockheed Martin Corporation | Refractive multispectral objective lens system and methods of selecting optical materials therefor |
| WO2004059266A2 (en) * | 2002-12-20 | 2004-07-15 | Hinds Instruments, Inc | Out-of-plane birefringence measurement |
| DE10328938A1 (de) | 2003-06-27 | 2005-01-20 | Carl Zeiss Smt Ag | Korrektureinrichtung zur Kompensation von Störungen der Polarisationsverteilung sowie Projektionsobjektiv für die Mikrolithografie |
| TWI360158B (en) | 2003-10-28 | 2012-03-11 | Nikon Corp | Projection exposure device,exposure method and dev |
| DE10355725A1 (de) | 2003-11-28 | 2005-06-30 | Carl Zeiss Smt Ag | Optisches System sowie Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauteile |
| JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
| US7301707B2 (en) | 2004-09-03 | 2007-11-27 | Carl Zeiss Smt Ag | Projection optical system and method |
-
2006
- 2006-09-13 WO PCT/EP2006/066332 patent/WO2007031544A1/en not_active Ceased
- 2006-09-13 KR KR1020087006172A patent/KR20080043835A/ko not_active Ceased
- 2006-09-13 CN CN2006800339207A patent/CN101263432B/zh active Active
- 2006-09-13 EP EP09160251A patent/EP2085824A1/en not_active Withdrawn
- 2006-09-13 EP EP06793489A patent/EP1924890A1/en not_active Withdrawn
- 2006-09-13 CN CN201110147181.7A patent/CN102207691B/zh not_active Expired - Fee Related
- 2006-09-13 JP JP2008530521A patent/JP2009508170A/ja active Pending
- 2006-09-14 TW TW095134115A patent/TW200717046A/zh unknown
-
2008
- 2008-03-05 US US12/042,621 patent/US8031326B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564958A (zh) * | 2002-08-05 | 2005-01-12 | Asml控股股份有限公司 | 在紫外微光刻术中修正固有双折射的方法和系统 |
Non-Patent Citations (2)
| Title |
|---|
| WO 2005/001527 A1,全文. |
| 同上. |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080043835A (ko) | 2008-05-19 |
| US20080204877A1 (en) | 2008-08-28 |
| WO2007031544A1 (en) | 2007-03-22 |
| TW200717046A (en) | 2007-05-01 |
| JP2009508170A (ja) | 2009-02-26 |
| US8031326B2 (en) | 2011-10-04 |
| CN101263432A (zh) | 2008-09-10 |
| CN102207691B (zh) | 2015-02-25 |
| CN102207691A (zh) | 2011-10-05 |
| EP1924890A1 (en) | 2008-05-28 |
| EP2085824A1 (en) | 2009-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |