JP2009302346A - 基板温調固定装置 - Google Patents
基板温調固定装置 Download PDFInfo
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- JP2009302346A JP2009302346A JP2008156018A JP2008156018A JP2009302346A JP 2009302346 A JP2009302346 A JP 2009302346A JP 2008156018 A JP2008156018 A JP 2008156018A JP 2008156018 A JP2008156018 A JP 2008156018A JP 2009302346 A JP2009302346 A JP 2009302346A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】吸着対象物が載置される基体と、接着層と、ベースプレートとを有し、前記基体は、前記接着層を介して前記ベースプレート上に固定されている基板温調固定装置であって、前記接着層は、耐プラズマ性を有する物質を含有することを特徴とする。
【選択図】図6
Description
図4は、本発明の第1の実施の形態に係る基板温調固定装置を簡略化して例示する平面図である。図5は、本発明の第1の実施の形態に係る基板温調固定装置を簡略化して例示する図4のB−B線に沿う断面図である。図4及び図5を参照するに、基板温調固定装置10は、静電チャック11と、接着層15と、ベースプレート16とを有する。
図9は、接着層に内包される部材の他の例を示す平面図である。図9に示す部材21は、平面視略円環状の部材であり、接着層15の外縁部のみに設けられる。部材21の外径φ4は、基体12の外径φ1と略同一か若干小さい。部材21の厚さは、接着層15の厚さに合わせて適宜決めることができる。部材21は、耐プラズマ性を有する物質を主成分としている。部材21を構成する具体的な材料については、部材20と同等であるため、その説明は省略する。
図10は、接着層に内包される部材の他の例を示す平面図である。図10に示す部材22及び23は平面視略円環状の部材であり、部材22は接着層15の外縁部に内包され、部材23は接着層15の貫通孔の周辺部に内包される。ここでいう貫通孔は、図5に示すガス路18及びその他の貫通孔を含む。その他の貫通孔とは、例えば、リフトピンを通すリフトピン孔、基板の温度を測定するセンサー孔等である。
図11〜図13は、接着層に内包される部材の他の例を示す平面図である。図11〜図13に示す部材24〜26は、耐プラズマ性を有する物質を主成分とするシートに所定の開口部を設けた物である。部材24〜26を構成する具体的な材料については部材20と同等であるため、その説明は省略する。
11,101 静電チャック
12,102 基体
12a,102a 基体の上面
12b,102b 外周シールリング
12c,102c 多数の突起部
13,103 静電電極
14,104 水路
14a,104a 冷却水導入部
14b,104b 冷却水排出部
15,105 接着層
15a 接着剤
16,106 ベースプレート
16b,106b ベースプレートの下面
17,107 基板
18,108 ガス路
18a,108a ガス導入部
18b,108b ガス排出部
19,109 ガス充填部
20,21,22,23,24,25,26 部材
20a,21a,22a,23a 開口部
h1 高さ
φ1〜φ9 径
t1 厚さ
Claims (8)
- 吸着対象物が載置される基体と、接着層と、ベースプレートとを有し、
前記基体は、前記接着層を介して前記ベースプレート上に固定されている基板温調固定装置であって、
前記接着層は、耐プラズマ性を有する物質を含有することを特徴とする基板温調固定装置。 - 前記接着層は、複数の開口部を有する部材を内包し、
前記部材は、前記耐プラズマ性を有する物質を主成分とすることを特徴とする請求項1記載の基板温調固定装置。 - 前記複数の開口部は、前記部材に網目状に形成されていることを特徴とする請求項2記載の基板温調固定装置。
- 前記部材は、平面視において少なくとも前記接着層の外縁部に内包されていることを特徴とする請求項2又は3記載の基板温調固定装置。
- 前記部材は、平面視において少なくとも前記接着層の貫通孔の周辺部に内包されていることを特徴とする請求項2乃至4の何れか一項記載の基板温調固定装置。
- 前記耐プラズマ性を有する物質は、フッ素系樹脂であることを特徴とする請求項1乃至5の何れか一項記載の基板温調固定装置。
- 前記フッ素系樹脂は、ポリテトラフルオロエチレンであることを特徴とする請求項6記載の基板温調固定装置。
- 更に、前記基体及び前記接着層を貫通し、前記基体の上面と前記吸着対象物の下面とが形成する空間に圧力を調整した不活性ガスを充填するガス路を有し、
少なくとも、平面視において前記接着層の前記ガス路が貫通する部分を囲むように、前記部材が内包されていることを特徴とする請求項2乃至7の何れか一項記載の基板温調固定装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008156018A JP5049891B2 (ja) | 2008-06-13 | 2008-06-13 | 基板温調固定装置 |
US12/482,482 US8641825B2 (en) | 2008-06-13 | 2009-06-11 | Substrate temperature regulation fixed apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008156018A JP5049891B2 (ja) | 2008-06-13 | 2008-06-13 | 基板温調固定装置 |
Publications (3)
Publication Number | Publication Date |
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JP2009302346A true JP2009302346A (ja) | 2009-12-24 |
JP2009302346A5 JP2009302346A5 (ja) | 2011-04-14 |
JP5049891B2 JP5049891B2 (ja) | 2012-10-17 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008156018A Expired - Fee Related JP5049891B2 (ja) | 2008-06-13 | 2008-06-13 | 基板温調固定装置 |
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US (1) | US8641825B2 (ja) |
JP (1) | JP5049891B2 (ja) |
Cited By (10)
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JP2011238682A (ja) * | 2010-05-07 | 2011-11-24 | Ngk Insulators Ltd | ウエハー載置装置及びその製造方法 |
KR20140107279A (ko) * | 2011-12-20 | 2014-09-04 | 도쿄엘렉트론가부시키가이샤 | 탑재대 및 플라즈마 처리 장치 |
JP2014165459A (ja) * | 2013-02-27 | 2014-09-08 | Ngk Spark Plug Co Ltd | 支持装置 |
JP2015138807A (ja) * | 2014-01-20 | 2015-07-30 | 株式会社ディスコ | プラズマエッチング装置 |
KR20150112777A (ko) * | 2014-03-27 | 2015-10-07 | 토토 가부시키가이샤 | 정전 척 |
JP2016092105A (ja) * | 2014-10-31 | 2016-05-23 | 住友大阪セメント株式会社 | 静電チャック装置 |
KR20170113560A (ko) * | 2015-02-18 | 2017-10-12 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 및 반도체 제조 장치 |
CN111326443A (zh) * | 2018-12-17 | 2020-06-23 | 三星电子株式会社 | 用于制造半导体器件的设备 |
JP2021093488A (ja) * | 2019-12-12 | 2021-06-17 | 日本特殊陶業株式会社 | 半導体製造装置用部品、保持装置、および半導体製造装置用部品の製造方法 |
US11575335B2 (en) | 2020-03-26 | 2023-02-07 | Samsung Electronics Co., Ltd. | Electrostatic chuck device |
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US9623503B2 (en) * | 2013-10-31 | 2017-04-18 | Semes Co., Ltd. | Support unit and substrate treating device including the same |
DE102014008031B4 (de) | 2014-05-28 | 2020-06-25 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co. | Elektrostatische Haltevorrichtung mit einer Keramik-Elektrode und Verfahren zur Herstellung einer solchen Haltevorrichtung |
DE102014008030A1 (de) | 2014-05-28 | 2015-12-03 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Verfahren zur Herstellung einer elektrostatischen Haltevorrichtung |
DE102014007903A1 (de) | 2014-05-28 | 2015-12-03 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co. | Elektrostatische Haltevorrichtung mit Noppen-Elektroden und Verfahren zu deren Herstellung |
DE102014008029B4 (de) | 2014-05-28 | 2023-05-17 | Asml Netherlands B.V. | Elektrostatische Haltevorrichtung mit einer Elektroden-Trägerscheibe und Verfahren zur Herstellung der Haltevorrichtung |
CN105441904B (zh) * | 2014-06-18 | 2018-06-26 | 中微半导体设备(上海)有限公司 | 气体喷淋装置、化学气相沉积装置和方法 |
US10269557B2 (en) * | 2015-10-20 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus of processing semiconductor substrate |
JP6839314B2 (ja) * | 2019-03-19 | 2021-03-03 | 日本碍子株式会社 | ウエハ載置装置及びその製法 |
CN113892061A (zh) * | 2019-05-29 | 2022-01-04 | Asml控股股份有限公司 | 分裂式双面晶片和掩模板夹具 |
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2009
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Cited By (18)
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KR101266669B1 (ko) | 2010-05-07 | 2013-05-27 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 배치 장치의 제조 방법 |
US8940115B2 (en) | 2010-05-07 | 2015-01-27 | Ngk Insulators, Ltd. | Wafer mount device and manufacturing method thereof |
JP2011238682A (ja) * | 2010-05-07 | 2011-11-24 | Ngk Insulators Ltd | ウエハー載置装置及びその製造方法 |
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KR20140107279A (ko) * | 2011-12-20 | 2014-09-04 | 도쿄엘렉트론가부시키가이샤 | 탑재대 및 플라즈마 처리 장치 |
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JP2016092105A (ja) * | 2014-10-31 | 2016-05-23 | 住友大阪セメント株式会社 | 静電チャック装置 |
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KR102623545B1 (ko) * | 2018-12-17 | 2024-01-10 | 삼성전자주식회사 | 반도체 소자 제조 장치 |
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JP7365221B2 (ja) | 2019-12-12 | 2023-10-19 | 日本特殊陶業株式会社 | 半導体製造装置用部品、保持装置、および半導体製造装置用部品の製造方法 |
US11575335B2 (en) | 2020-03-26 | 2023-02-07 | Samsung Electronics Co., Ltd. | Electrostatic chuck device |
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