JP2009283607A - ウエハ薄化加工兼用の半導体用接着テープ及びウエハ薄化加工兼用の半導体用接着テープの半導体ウエハ表面への貼り付け方法 - Google Patents
ウエハ薄化加工兼用の半導体用接着テープ及びウエハ薄化加工兼用の半導体用接着テープの半導体ウエハ表面への貼り付け方法 Download PDFInfo
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- JP2009283607A JP2009283607A JP2008133008A JP2008133008A JP2009283607A JP 2009283607 A JP2009283607 A JP 2009283607A JP 2008133008 A JP2008133008 A JP 2008133008A JP 2008133008 A JP2008133008 A JP 2008133008A JP 2009283607 A JP2009283607 A JP 2009283607A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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Abstract
【解決手段】 粘着剤層を有する基材フィルムと、接着剤であるフィルムを貼り合せた積層型のウエハ薄化加工兼用半導体用接着テープであって、基材フィルムと積層された接着フィルムの両方又は片方が、半導体ウエハと同形状、同程度の大きさであるウエハ薄化加工兼用半導体用接着テープ及びウエハ薄化加工兼用の半導体用接着テープの半導体ウエハ表面への貼り付け方法。
【選択図】 図2
Description
各種テープを切断する際に用いる刃は必ず磨耗する。
本発明に係るテープを切断する際に用いる刃のようなものには、磨耗によりある頻度での交換が必要だが、高価なものが多いという問題がある。
また、本発明は、半導体用接着テープが、サポートテープを有し、その前後又は左右に貼り付けるときの位置合わせ用の目印を有する上記のウエハ薄化加工兼用半導体用接着テープに関する。
また、本発明は、接着剤に含む導電性を有する粒子によって電気的、物理的に接続可能にした上記のウエハ薄化加工兼用の半導体用接着テープに関する。
また、接着剤フィルムB3は、高反応性及び保存安定性を両立させるために、潜在性の硬化剤を含むことが好ましい。
接着剤フィルムB3内には、導電粒子を分散させてもよい。この場合、突出電極A3の高さのバラツキによる悪影響を低減することができる。
さらに、接着剤フィルムB3を異方導電性の接着剤層とすることができる。
化合物(A)の放射線硬化性炭素−炭素二重結合の導入量は、ヨウ素価で0.5〜20、好ましくは0.8〜10である。ヨウ素価が0.5以上であると、放射線照射後の粘着力の低減効果を得ることができ、ヨウ素価が20以下であれば、放射線照射後の粘着剤の流動性が十分で、延伸後の素子間隙を十分得ることができるため、ピックアップ時に各素子の画像認識が困難になるという問題が抑制できる。さらに、化合物(A)そのものに安定性があり、製造が容易となる。
また、ガラス転移点の他、相溶性と各種性能を上げる目的で酢酸ビニル、スチレン、アクリロニトリル等の炭素−炭素二重結合をもつ低分子化合物を配合することも単量体(I−1)の総重量の5重量%以下の範囲内で可能である。
また、分子量を調節することに関しては、メルカプタン、四塩化炭素系の溶剤を用いることが好ましい。なお、この反応は溶液重合に限定されるものではなく、塊状重合、懸濁重合など別の方法でも差し支えない。
また、化合物(A)が、酸価0.5〜30となるCOOH基を有することが好ましい。
化合物(B)は、ポリイソシアネート類、メラミン・ホルムアルデヒド樹脂及びエポキシ樹脂から少なくとも1種選ばれる化合物であり、単独で又は2種類以上を組み合わせて使用することができる。
さらに、エポキシ樹脂としては、TETRAD−X(登録商標、三菱化学(株)製)などを用いることができる。本実施形態においては、特にポリイソシアネート類を用いることが好ましい。
粘着剤層の厚さについては特に制限はないが、通常2μm〜50μmである。
A1 回路面
A2 裏面
A3 突出電極
20、21、22、23、24、25 ウエハ薄化加工兼用半導体用接着テープ
B1 基材フィルム
B2 粘着剤層
B3 接着フィルム
B4、B5 ウエハ薄化加工兼用半導体用接着テープの上下のサポートテープ
b1 直径
31 ウエハ薄化加工兼用半導体用接着テープとウエハの貼り合せ品(サポートテープなし、薄化前)
32 ウエハ加工テープの積層体
33 ウエハ加工テープ
41 ダイシングフレーム
42 ダイシングテープ
51 剥離用のテープ
61 積層体
62 ダイシングブレード
63 接着剤であるフィルム付半導体チップ
71 支持体
72 電極又は配線
Claims (10)
- 粘着剤層を有する基材フィルムと、接着剤であるフィルムを貼り合せた積層型のウエハ薄化加工兼用半導体用接着テープであって、基材フィルムと積層された接着フィルムの両方又は片方が、半導体ウエハと同形状及び同程度の大きさであるウエハ薄化加工兼用半導体用接着テープ。
- 半導体用接着テープが、上下面にサポートテープを有する請求項1記載のウエハ薄化加工兼用半導体用接着テープ。
- 半導体用接着テープが、サポートテープを有し、その前後又は左右に貼り付けるときの位置合わせ用の目印を有する請求項1記載のウエハ薄化加工兼用半導体用接着テープ。
- 基材フィルムと積層された接着フィルムの両方又は片方が、半導体ウエハと同形状及び同程度の大きさであり、かつ半導体ウエハと同形状及び同程度の大きさの接着テープが、打ち抜き加工、切断加工、塗工することにより得られる請求項1〜3のいずれかに記載のウエハ薄化加工兼用半導体用接着テープ。
- 半導体用接着テープが、ウエハの裏面研削時にはウエハ表面の回路側に貼り付けられ、裏面研削後には、粘着剤層を有する基材フィルムと接着剤であるフィルムの間で剥離することのできる請求項1〜4のいずれかに記載のウエハ薄化加工兼用の半導体用接着テープ。
- 接着剤の層が、ウエハ表面の回路側に張り付いた状態で半導体チップの大きさに分割され、その後リードフレーム、半導体パッケージ基板又は別の半導体チップのような、半導体装置の一部となる支持体に加熱接着したものである請求項5記載のウエハ薄化加工兼用の半導体用接着テープ。
- 接着剤の層が、ウエハ表面の回路側に張り付いた状態で別の半導体ウエハのような半導体装置の一部となる支持体に加熱接着したものである請求項5記載のウエハ薄化加工兼用の半導体用接着テープ。
- 前記半導体チップと半導体装置の一部となる支持体が、接着剤により電気的、物理的に接続した請求項6又は7記載のウエハ薄化加工兼用の半導体用接着テープ。
- 接着剤に含む導電性を有する粒子によって電気的、物理的に接続可能にした請求項8記載のウエハ薄化加工兼用の半導体用接着テープ。
- 請求項4記載で得られるウエハ薄化加工兼用の半導体用接着テープの接着剤であるフィルム側を回路面側に向けた状態で、ウエハ薄化加工兼用の半導体用接着テープを半導体ウエハの回路面に貼り付けた後、圧力を加えつつ、半導体ウエハを裏面側から研磨することを特徴とするウエハ薄化加工兼用の半導体用接着テープの半導体ウエハ表面への貼り付け方法。
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JP2011155191A (ja) * | 2010-01-28 | 2011-08-11 | Hitachi Chem Co Ltd | 半導体装置の製造方法及び回路部材接続用接着シート |
JP2011171711A (ja) * | 2010-01-21 | 2011-09-01 | Hitachi Chem Co Ltd | 半導体ウェハ加工用接着フィルム |
JP2012038975A (ja) * | 2010-08-09 | 2012-02-23 | Hitachi Chem Co Ltd | 回路部材接続用接着剤、回路部材接続用接着剤シート、半導体装置及び半導体装置の製造方法 |
JP2012190924A (ja) * | 2011-03-09 | 2012-10-04 | Sekisui Chem Co Ltd | フリップチップ実装用接着剤、フリップチップ実装用接着フィルム及び半導体チップの実装方法 |
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JP2003324080A (ja) * | 2002-04-30 | 2003-11-14 | Lintec Corp | 半導体装置の製造方法 |
JP2005028734A (ja) * | 2003-07-11 | 2005-02-03 | Nitto Denko Corp | 積層シート |
JP2005191322A (ja) * | 2003-12-26 | 2005-07-14 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JP2006049482A (ja) * | 2004-08-03 | 2006-02-16 | Furukawa Electric Co Ltd:The | 半導体装置製造方法およびウエハ加工用テープ |
JP2008098427A (ja) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | 半導体装置の製造方法 |
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JP2011155065A (ja) * | 2010-01-26 | 2011-08-11 | Hitachi Chem Co Ltd | 半導体ウェハ加工用接着フィルム及びその製造方法 |
JP2011155191A (ja) * | 2010-01-28 | 2011-08-11 | Hitachi Chem Co Ltd | 半導体装置の製造方法及び回路部材接続用接着シート |
JP2012038975A (ja) * | 2010-08-09 | 2012-02-23 | Hitachi Chem Co Ltd | 回路部材接続用接着剤、回路部材接続用接着剤シート、半導体装置及び半導体装置の製造方法 |
JP2012190924A (ja) * | 2011-03-09 | 2012-10-04 | Sekisui Chem Co Ltd | フリップチップ実装用接着剤、フリップチップ実装用接着フィルム及び半導体チップの実装方法 |
JP7043173B2 (ja) | 2017-02-07 | 2022-03-29 | 東京応化工業株式会社 | ダイシング用保護膜基材、ダイシング用保護膜組成物、ダイシング用保護シート、及び被加工ウエーハの製造方法 |
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