JP2009277527A - 光電変換素子及び太陽電池 - Google Patents
光電変換素子及び太陽電池 Download PDFInfo
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- JP2009277527A JP2009277527A JP2008128267A JP2008128267A JP2009277527A JP 2009277527 A JP2009277527 A JP 2009277527A JP 2008128267 A JP2008128267 A JP 2008128267A JP 2008128267 A JP2008128267 A JP 2008128267A JP 2009277527 A JP2009277527 A JP 2009277527A
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- photoelectric conversion
- semiconductor
- conversion element
- carbon
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 76
- 150000001875 compounds Chemical class 0.000 claims abstract description 36
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 15
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 11
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 10
- 125000003710 aryl alkyl group Chemical group 0.000 claims abstract description 9
- 125000003118 aryl group Chemical group 0.000 claims abstract description 7
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims abstract description 6
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 102
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- 125000001424 substituent group Chemical group 0.000 claims description 8
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- 238000012546 transfer Methods 0.000 description 3
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- 239000011701 zinc Substances 0.000 description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N 1,1,2-trichloroethane Chemical compound ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
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- 229910006404 SnO 2 Inorganic materials 0.000 description 2
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- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
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Abstract
Description
2.対向電極間に、少なくとも半導体層及び電解質層が設けられている光電変換素子において、前記半導体層が前記一般式(1)または(2)で表される化合物を含有することを特徴とする前記1に記載の光電変換素子。
3.前記1または2に記載の光電変換素子を有することを特徴とする太陽電池。
前記一般式(1)で表される化合物について説明する。
前記一般式(2)で表される化合物について説明する。
下記スキームにより、例示化合物A−1を合成した。
本発明の光電変換素子は、導電性支持体上の半導体に色素を含ませてなる光電極と対向電極を、電解質層を介して対向配置してなる。以下、半導体、光電極、電解質、対向電極について順次説明する。
光電極に用いられる半導体としては、シリコン、ゲルマニウムのような単体、周期表(元素周期表ともいう)の第3〜第5族、第13〜第15族系の元素を有する化合物、金属のカルコゲニド(例えば、酸化物、硫化物、セレン化物等)、金属窒化物等を使用することができる。
本発明の光電変換素子や本発明の太陽電池に用いられる導電性支持体(基板)には、金属板のような導電性材料や、ガラス板やプラスチックフイルムのような非導電性材料に導電性物質を設けた構造のものを用いることができる。導電性支持体に用いられる材料の例としては金属(例えば白金、金、銀、銅、アルミニウム、ロジウム、インジウム)あるいは導電性金属酸化物(例えばインジウム−スズ複合酸化物、酸化スズにフッ素をドープしたもの)や炭素を挙げることができる。導電性支持体の厚さは特に制約されないが、0.3〜5mmが好ましい。
本発明に係る光電極の作製方法について説明する。
まず、半導体の微粉末を含む塗布液を調製する。この半導体微粉末はその1次粒子径が微細な程好ましく、その1次粒子径は1〜5000nmが好ましく、さらに好ましくは2〜50nmである。半導体微粉末を含む塗布液は、半導体微粉末を溶媒中に分散させることによって調製することができる。溶媒中に分散された半導体微粉末は、その1次粒子状で分散する。溶媒としては半導体微粉末を分散し得るものであればよく、特に制約されない。
上記のようにして得られた半導体微粉末含有塗布液を、導電性支持体上に塗布または吹きつけ、乾燥等を行った後、空気中または不活性ガス中で焼成して、導電性支持体上に半導体層(半導体膜とも言う)が形成される。
半導体の増感処理は、前述のように増感色素を適切な溶媒に溶解し、その溶液に前記半導体を焼成した基板を浸漬することによって行われる。その際には半導体層(半導体膜ともいう)を焼成により形成させた基板を、予め減圧処理したり加熱処理したりして膜中の気泡を除去しおくことが好ましい。このような処理により、増感色素が半導体層(半導体膜)内部深くに進入できるようになり、半導体層(半導体膜)が多孔質構造膜である場合には特に好ましい。
半導体を焼成した基板を、増感色素を含む溶液に浸漬する時間は、半導体層(半導体膜)に深く進入して吸着等を充分に進行させ、半導体を十分に増感させることが好ましい。また、溶液中での増感色素の分解等により生成して分解物が増感色素の吸着を妨害することを抑制する観点から、25℃条件下では1〜48時間が好ましく、さらに好ましくは2〜24時間である。この効果は、特に半導体膜が多孔質構造膜である場合において顕著である。但し、浸漬時間については25℃条件での値であり、温度条件を変化させた場合には、上記の限りではない。
本発明に用いられる電解質について説明する。
本発明に用いられる対向電極について説明する。
本発明の太陽電池について説明する。
〔光電変換素子1の作製〕
市販の酸化チタンペースト(粒径18nm)をフッ素ドープ酸化スズ(FTO)導電性ガラス基板上にドクターブレード法により塗布した。60℃で10分間加熱してペーストを乾燥した後、500℃で30分間焼成を行った。次に例示化合物A−1をエタノールに溶解し、3×10−4mol/lの溶液を作製した。酸化チタンを塗布焼結したFTOガラス基板を、この溶液に室温で16時間浸漬して色素の吸着処理を行い、光電変換電極とした。このようにして光電変換電極二部を作製し、一部はそのまま、一部は13ppmのオゾン雰囲気下で20分間オゾン暴露試験を行い、暴露前後の電極を用いて光電変換素子を作製した。
光電変換素子1の作製において、例示化合物A−1を表1に記載の化合物に変更した以外は同様にして、光電変換素子2〜8を作製した。
(発電特性)
作製した光電変換素子を、ソーラーシミュレータ(ワコム電創株式会社製、商品名;「WXS−85−H型」)を用い、AMフィルター(AM−1.5)を通したキセノンランプから100mW/cm2の擬似太陽光を照射することにより行った。即ち、光電変換素子について、I−Vテスターを用いて室温にて電流−電圧特性を測定し、短絡電流(Jsc)、開放電圧(Voc)、及び形状因子(F.F.)を求め、これらから光電変換効率(η(%))を求めた。さらに、オゾン暴露試験前後での光電変換効率を比較した。
光電変換素子1で用いたと同様のFTO導電性ガラス基板上に、アルコキシチタン溶液(松本工商:TA−25/IPA希釈)をスピンコート法にて塗布した。室温で30分放置後、450℃で30分間焼成を行い、短絡防止層とした。続いて、市販の酸化チタンペースト(粒径18nm)を上記基板へ、ドクターブレード法により塗布した後、60℃で10分間加熱処理後、500℃で30分間焼成を行い、厚さ5μmの酸化チタン薄膜を有する半導体電極基板を得た。
光電変換素子9の作製において、例示化合物A−4を表2に記載の増感色素に変更した以外は同様にして、光電変換素子10〜14を得た。
得られた各光電変換素子について光電変換素子1と同様にして評価を行った。評価の結果を表2に示す。
2、7 透明導電膜
3 半導体
4 増感色素
5 電解質
6 対向電極
7 透明導電膜
8 白金
Claims (3)
- 下記一般式(1)または(2)で表される化合物を含有することを特徴とする光電変換素子。
- 対向電極間に、少なくとも半導体層及び電解質層が設けられている光電変換素子において、前記半導体層が前記一般式(1)または(2)で表される化合物を含有することを特徴とする請求項1に記載の光電変換素子。
- 請求項1または2に記載の光電変換素子を有することを特徴とする太陽電池。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009266633A (ja) * | 2008-04-25 | 2009-11-12 | Konica Minolta Business Technologies Inc | 光電変換素子及び太陽電池 |
JP2015151505A (ja) * | 2014-02-18 | 2015-08-24 | 保土谷化学工業株式会社 | 光電変換用増感色素およびそれを用いた光電変換素子ならびに色素増感太陽電池 |
KR20190057057A (ko) | 2016-09-27 | 2019-05-27 | 호도가야 가가쿠 고교 가부시키가이샤 | 증감 색소, 광전 변환용 증감 색소 및 그것을 사용한 광전 변환 소자 그리고 색소 증감 태양 전지 |
CN115710186A (zh) * | 2022-10-27 | 2023-02-24 | 上海八亿时空先进材料有限公司 | 一种芴衍生物及其应用 |
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JP2002367685A (ja) * | 2001-06-11 | 2002-12-20 | Mitsubishi Paper Mills Ltd | 光電変換素子 |
JP2004292744A (ja) * | 2003-03-28 | 2004-10-21 | Toyo Ink Mfg Co Ltd | 光機能材料 |
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JP2002367685A (ja) * | 2001-06-11 | 2002-12-20 | Mitsubishi Paper Mills Ltd | 光電変換素子 |
JP2004292744A (ja) * | 2003-03-28 | 2004-10-21 | Toyo Ink Mfg Co Ltd | 光機能材料 |
US20070073052A1 (en) * | 2005-09-27 | 2007-03-29 | Marappan Velusamy | Organic dye used in dye-sensitized solar cell |
JP2009249630A (ja) * | 2008-04-07 | 2009-10-29 | Everlight Usa Inc | 色素化合物 |
JP2009266633A (ja) * | 2008-04-25 | 2009-11-12 | Konica Minolta Business Technologies Inc | 光電変換素子及び太陽電池 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009266633A (ja) * | 2008-04-25 | 2009-11-12 | Konica Minolta Business Technologies Inc | 光電変換素子及び太陽電池 |
JP2015151505A (ja) * | 2014-02-18 | 2015-08-24 | 保土谷化学工業株式会社 | 光電変換用増感色素およびそれを用いた光電変換素子ならびに色素増感太陽電池 |
KR20190057057A (ko) | 2016-09-27 | 2019-05-27 | 호도가야 가가쿠 고교 가부시키가이샤 | 증감 색소, 광전 변환용 증감 색소 및 그것을 사용한 광전 변환 소자 그리고 색소 증감 태양 전지 |
CN115710186A (zh) * | 2022-10-27 | 2023-02-24 | 上海八亿时空先进材料有限公司 | 一种芴衍生物及其应用 |
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