JP2009258527A - 光学素子 - Google Patents

光学素子 Download PDF

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Publication number
JP2009258527A
JP2009258527A JP2008109734A JP2008109734A JP2009258527A JP 2009258527 A JP2009258527 A JP 2009258527A JP 2008109734 A JP2008109734 A JP 2008109734A JP 2008109734 A JP2008109734 A JP 2008109734A JP 2009258527 A JP2009258527 A JP 2009258527A
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JP
Japan
Prior art keywords
waveguide
refractive index
optical
junction
silicon
Prior art date
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Withdrawn
Application number
JP2008109734A
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English (en)
Japanese (ja)
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JP2009258527A5 (https=
Inventor
Kazuhiko Hosomi
和彦 細見
Toshiki Sugawara
俊樹 菅原
Yasunobu Matsuoka
康信 松岡
Hideo Arimoto
英生 有本
Shinichi Saito
慎一 斎藤
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2008109734A priority Critical patent/JP2009258527A/ja
Priority to US12/385,736 priority patent/US20090263078A1/en
Publication of JP2009258527A publication Critical patent/JP2009258527A/ja
Publication of JP2009258527A5 publication Critical patent/JP2009258527A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/105—Materials and properties semiconductor single crystal Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2008109734A 2008-04-21 2008-04-21 光学素子 Withdrawn JP2009258527A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008109734A JP2009258527A (ja) 2008-04-21 2008-04-21 光学素子
US12/385,736 US20090263078A1 (en) 2008-04-21 2009-04-17 Optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008109734A JP2009258527A (ja) 2008-04-21 2008-04-21 光学素子

Publications (2)

Publication Number Publication Date
JP2009258527A true JP2009258527A (ja) 2009-11-05
JP2009258527A5 JP2009258527A5 (https=) 2011-07-21

Family

ID=41201167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008109734A Withdrawn JP2009258527A (ja) 2008-04-21 2008-04-21 光学素子

Country Status (2)

Country Link
US (1) US20090263078A1 (https=)
JP (1) JP2009258527A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012042532A (ja) * 2010-08-13 2012-03-01 Fujitsu Ltd 位相変調素子
JP2012198465A (ja) * 2011-03-23 2012-10-18 Toshiba Corp リング光変調器
JP2014002384A (ja) * 2012-06-18 2014-01-09 Gwangju Inst Of Science & Technology 光学素子
JP2014109594A (ja) * 2012-11-30 2014-06-12 Fujitsu Ltd 光変調器及び光送信器
US8873895B2 (en) 2010-03-05 2014-10-28 Nec Corporation Optical modulator
JP2016524728A (ja) * 2013-06-12 2016-08-18 マサチューセッツ インスティテュート オブ テクノロジー 標準的な製造処理からの光変調器
KR101842393B1 (ko) * 2017-05-10 2018-03-26 한양대학교 산학협력단 Pn접합 광 변조기 및 그 제조 방법
JPWO2022049770A1 (https=) * 2020-09-07 2022-03-10
CN114217459A (zh) * 2021-12-16 2022-03-22 武汉光谷信息光电子创新中心有限公司 微环调制器及其制备方法

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US7616850B1 (en) * 2008-04-09 2009-11-10 Sandia Corporation Wavelength-tunable optical ring resonators
US7941014B1 (en) * 2008-04-09 2011-05-10 Sandia Corporation Optical waveguide device with an adiabatically-varying width
US8548281B2 (en) * 2009-09-08 2013-10-01 Electronics And Telecommunications Research Institute Electro-optic modulating device
US8606055B2 (en) * 2009-11-06 2013-12-10 Cornell University Pin diode tuned multiple ring waveguide resonant optical cavity switch and method
KR101758141B1 (ko) * 2010-09-17 2017-07-14 삼성전자주식회사 수직 슬랩들을 포함하는 광전자 장치
DE102011005422B4 (de) * 2011-03-11 2013-01-31 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Elektrooptischer Modulator
US8889447B2 (en) * 2012-06-21 2014-11-18 International Business Machines Corporation Double layer interleaved p-n diode modulator
WO2014062211A1 (en) 2012-10-19 2014-04-24 Massachusetts Institute Of Technology Devices and techniques for integrated optical data communication
KR20140075821A (ko) * 2012-11-22 2014-06-20 삼성전자주식회사 파장 가변형 광 송신기
KR102116977B1 (ko) * 2013-04-11 2020-05-29 삼성전자 주식회사 비열 광 변조기 및 그 제조 방법
FR3005755A1 (fr) * 2013-05-17 2014-11-21 St Microelectronics Sa Dephaseur electro-optique statique double a deux bornes de commande
CN103487889A (zh) * 2013-08-12 2014-01-01 上海交通大学 基于双谐振腔耦合马赫-曾德尔光开关结构
US9235065B1 (en) * 2014-01-09 2016-01-12 Sandia Corporation Thermally tuneable optical modulator adapted for differential signaling
CN105452921B (zh) 2014-07-18 2019-03-08 华为技术有限公司 波长选择开关和选择波长的方法
US9575338B2 (en) 2015-03-10 2017-02-21 International Business Machines Corporation Controlled-capacitance full-depletion interdigitated pin modulator
US20160313577A1 (en) * 2015-04-23 2016-10-27 Laxense Inc. Dual-junction optical modulator and the method to make the same
US11105974B2 (en) * 2015-06-30 2021-08-31 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
WO2017058319A2 (en) 2015-06-30 2017-04-06 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
CN105092531B (zh) * 2015-08-31 2017-10-20 浙江大学 基于双环谐振腔辅助的马赫‑曾德尔干涉仪光学生物传感器
TWI607263B (zh) * 2016-12-27 2017-12-01 友達光電股份有限公司 顯示面板
JP6412969B2 (ja) * 2017-03-14 2018-10-24 沖電気工業株式会社 光導波路素子
US10162200B1 (en) * 2017-06-19 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Electro-optic phase modulator and method of manufacturing the same
US10126496B1 (en) * 2017-07-13 2018-11-13 Chen-Kuo Sun Reverse bias modulating multi-material waveguide/diode
US10036855B1 (en) * 2017-07-13 2018-07-31 Chen-Kuo Sun Reverse bias modulating waveguide/diode
US10409137B2 (en) 2017-08-22 2019-09-10 Chen-Kuo Sun System and method for controlling energy flux modulation
US10698158B1 (en) * 2017-11-28 2020-06-30 Facebook Technologies, Llc Optical waveguides in micro-LED devices
US10241354B1 (en) * 2018-03-14 2019-03-26 International Business Machines Corporation Electro-optic modulator with a periodic junction arrangement
FR3084481B1 (fr) * 2018-07-25 2021-07-23 Commissariat Energie Atomique Modulateur-commutateur athermique a deux anneaux superposes
US10845670B2 (en) 2018-08-17 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Folded waveguide phase shifters
US10684530B1 (en) * 2019-02-28 2020-06-16 Globalfoundries Inc. Electro-optic modulators with layered arrangements
US11378825B2 (en) 2019-09-17 2022-07-05 Lumentum Operations Llc Electrical-optical modulator
US10895764B1 (en) 2019-10-24 2021-01-19 Veo, Inc. Dielectric electro-optic phase shifter
US12228808B2 (en) 2021-04-30 2025-02-18 Marvell Asia Pte Ltd Semiconductor-based optical modulator
US12429718B1 (en) * 2022-06-23 2025-09-30 Marvell Asia Pte Ltd Ultra-high bandwidth multi-junction silicon optical modulator
CN117434651A (zh) * 2022-07-12 2024-01-23 南京光智元科技有限公司 半导体器件、芯片以及半导体器件的制作方法
CN115469469B (zh) * 2022-09-05 2025-11-25 清华大学 半导体光学非线性运算器件、调制方法及运算器

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US7136544B1 (en) * 2003-08-15 2006-11-14 Luxtera, Inc. PN diode optical modulators fabricated in strip loaded waveguides
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JPH03127020A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 光変調器
JPH0667126A (ja) * 1992-08-24 1994-03-11 Nippon Telegr & Teleph Corp <Ntt> 半導体波長フィルタ及び半導体レーザ
JP2002540469A (ja) * 1999-03-25 2002-11-26 ブックハム テクノロジー ピーエルシー 半導体導波路の位相変調器

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8873895B2 (en) 2010-03-05 2014-10-28 Nec Corporation Optical modulator
JP2012042532A (ja) * 2010-08-13 2012-03-01 Fujitsu Ltd 位相変調素子
JP2012198465A (ja) * 2011-03-23 2012-10-18 Toshiba Corp リング光変調器
JP2014002384A (ja) * 2012-06-18 2014-01-09 Gwangju Inst Of Science & Technology 光学素子
JP2014109594A (ja) * 2012-11-30 2014-06-12 Fujitsu Ltd 光変調器及び光送信器
JP2016524728A (ja) * 2013-06-12 2016-08-18 マサチューセッツ インスティテュート オブ テクノロジー 標準的な製造処理からの光変調器
KR101842393B1 (ko) * 2017-05-10 2018-03-26 한양대학교 산학협력단 Pn접합 광 변조기 및 그 제조 방법
JPWO2022049770A1 (https=) * 2020-09-07 2022-03-10
CN114217459A (zh) * 2021-12-16 2022-03-22 武汉光谷信息光电子创新中心有限公司 微环调制器及其制备方法
CN114217459B (zh) * 2021-12-16 2025-03-04 武汉光谷信息光电子创新中心有限公司 微环调制器及其制备方法

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