JP2009252983A - 撮像センサー、及び撮像センサーの製造方法 - Google Patents

撮像センサー、及び撮像センサーの製造方法 Download PDF

Info

Publication number
JP2009252983A
JP2009252983A JP2008098746A JP2008098746A JP2009252983A JP 2009252983 A JP2009252983 A JP 2009252983A JP 2008098746 A JP2008098746 A JP 2008098746A JP 2008098746 A JP2008098746 A JP 2008098746A JP 2009252983 A JP2009252983 A JP 2009252983A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion unit
light
air gap
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008098746A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009252983A5 (enExample
Inventor
Makoto Takamiya
誠 高宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008098746A priority Critical patent/JP2009252983A/ja
Priority to US12/413,141 priority patent/US20090250777A1/en
Publication of JP2009252983A publication Critical patent/JP2009252983A/ja
Publication of JP2009252983A5 publication Critical patent/JP2009252983A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008098746A 2008-04-04 2008-04-04 撮像センサー、及び撮像センサーの製造方法 Pending JP2009252983A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008098746A JP2009252983A (ja) 2008-04-04 2008-04-04 撮像センサー、及び撮像センサーの製造方法
US12/413,141 US20090250777A1 (en) 2008-04-04 2009-03-27 Image sensor and image sensor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008098746A JP2009252983A (ja) 2008-04-04 2008-04-04 撮像センサー、及び撮像センサーの製造方法

Publications (2)

Publication Number Publication Date
JP2009252983A true JP2009252983A (ja) 2009-10-29
JP2009252983A5 JP2009252983A5 (enExample) 2011-05-19

Family

ID=41132480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008098746A Pending JP2009252983A (ja) 2008-04-04 2008-04-04 撮像センサー、及び撮像センサーの製造方法

Country Status (2)

Country Link
US (1) US20090250777A1 (enExample)
JP (1) JP2009252983A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182430A (ja) * 2011-02-09 2012-09-20 Canon Inc 光電変換装置
JP2013093616A (ja) * 2011-02-09 2013-05-16 Canon Inc 光電変換装置
US8472762B2 (en) 2010-10-29 2013-06-25 Samsung Electronics Co., Ltd. Biomimetic compound eye optical sensor and fabricating method thereof
WO2013129559A1 (ja) * 2012-02-29 2013-09-06 Etoh Takeharu 固体撮像装置
JP2015032610A (ja) * 2013-07-31 2015-02-16 キヤノン株式会社 固体撮像素子およびそれを用いた撮像装置
US10008528B2 (en) 2015-09-30 2018-06-26 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2020038960A (ja) * 2018-08-30 2020-03-12 パナソニックＩｐマネジメント株式会社 固体撮像素子

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5164509B2 (ja) * 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
JP5783741B2 (ja) * 2011-02-09 2015-09-24 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
JP2012178496A (ja) * 2011-02-28 2012-09-13 Sony Corp 固体撮像装置、電子機器、半導体装置、固体撮像装置の製造方法
US9153490B2 (en) * 2011-07-19 2015-10-06 Sony Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device
US10325947B2 (en) * 2013-01-17 2019-06-18 Semiconductor Components Industries, Llc Global shutter image sensors with light guide and light shield structures
JP2015087431A (ja) * 2013-10-28 2015-05-07 株式会社東芝 光学装置及び固体撮像装置
KR102268712B1 (ko) 2014-06-23 2021-06-28 삼성전자주식회사 자동 초점 이미지 센서 및 이를 포함하는 디지털 영상 처리 장치
JP6903396B2 (ja) * 2015-10-14 2021-07-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
US10319765B2 (en) * 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
CN116134619A (zh) * 2020-07-30 2023-05-16 松下知识产权经营株式会社 光检测器、固体摄像元件、以及光检测器的制造方法
US11923393B2 (en) * 2021-01-07 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor having reflection component and method of making

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193500A (ja) * 2002-12-13 2004-07-08 Sony Corp 固体撮像素子及びその製造方法
JP2007095791A (ja) * 2005-09-27 2007-04-12 Canon Inc 撮像装置の製造方法
JP2007150087A (ja) * 2005-11-29 2007-06-14 Fujifilm Corp 固体撮像素子およびその製造方法
JP2008010544A (ja) * 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
JP3571909B2 (ja) * 1998-03-19 2004-09-29 キヤノン株式会社 固体撮像装置及びその製造方法
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US7139028B2 (en) * 2000-10-17 2006-11-21 Canon Kabushiki Kaisha Image pickup apparatus
KR20110015473A (ko) * 2002-12-13 2011-02-15 소니 주식회사 고체 촬상 소자 및 그 제조방법
US7001795B2 (en) * 2003-02-27 2006-02-21 Micron Technology, Inc. Total internal reflection (TIR) CMOS imager
KR100760137B1 (ko) * 2005-12-29 2007-09-18 매그나칩 반도체 유한회사 이미지센서 및 그의 제조 방법
JP2007201091A (ja) * 2006-01-25 2007-08-09 Fujifilm Corp 固体撮像素子の製造方法
US7358583B2 (en) * 2006-02-24 2008-04-15 Tower Semiconductor Ltd. Via wave guide with curved light concentrator for image sensing devices
JP2008085174A (ja) * 2006-09-28 2008-04-10 Fujifilm Corp 撮像装置
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193500A (ja) * 2002-12-13 2004-07-08 Sony Corp 固体撮像素子及びその製造方法
JP2007095791A (ja) * 2005-09-27 2007-04-12 Canon Inc 撮像装置の製造方法
JP2007150087A (ja) * 2005-11-29 2007-06-14 Fujifilm Corp 固体撮像素子およびその製造方法
JP2008010544A (ja) * 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8472762B2 (en) 2010-10-29 2013-06-25 Samsung Electronics Co., Ltd. Biomimetic compound eye optical sensor and fabricating method thereof
JP2012182430A (ja) * 2011-02-09 2012-09-20 Canon Inc 光電変換装置
JP2013093616A (ja) * 2011-02-09 2013-05-16 Canon Inc 光電変換装置
US8817144B2 (en) 2011-02-09 2014-08-26 Canon Kabushiki Kaisha Photoelectric conversion apparatus
WO2013129559A1 (ja) * 2012-02-29 2013-09-06 Etoh Takeharu 固体撮像装置
US9503663B2 (en) 2012-02-29 2016-11-22 Takeharu Etoh Solid-state imaging apparatus
JP2015032610A (ja) * 2013-07-31 2015-02-16 キヤノン株式会社 固体撮像素子およびそれを用いた撮像装置
US10008528B2 (en) 2015-09-30 2018-06-26 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2020038960A (ja) * 2018-08-30 2020-03-12 パナソニックＩｐマネジメント株式会社 固体撮像素子

Also Published As

Publication number Publication date
US20090250777A1 (en) 2009-10-08

Similar Documents

Publication Publication Date Title
JP2009252983A (ja) 撮像センサー、及び撮像センサーの製造方法
JP5428451B2 (ja) 固体撮像装置とその製造方法および撮像装置
CN104485340B (zh) 光电转换装置
CN102800683B (zh) 光电转换设备和制造光电转换设备的方法
JP5241902B2 (ja) 半導体装置の製造方法
JP5637693B2 (ja) 光電変換装置、及び撮像システム
US20100230583A1 (en) Solid state image pickup device, method of manufacturing the same, image pickup device, and electronic device
CN102637705B (zh) 半导体器件制造方法
US9214578B2 (en) Photoelectric conversion apparatus
CN102637712B (zh) 半导体装置及其制造方法
JP2010093081A (ja) 固体撮像装置およびその製造方法
JP2009016574A (ja) 固体撮像装置およびその製造方法
JP2009194340A (ja) 光電変換装置、及び光電変換装置の製造方法
JP2008166677A (ja) 固体撮像装置とその製造方法並びにカメラ
JP2011233862A (ja) 固体撮像装置及び撮像システム
JP2009088415A (ja) 固体撮像装置及びその製造方法、並びにカメラ
JP2007013061A (ja) 固体撮像装置及びその製造方法
JP2003197897A (ja) 半導体光電変換装置
JP2010087039A (ja) 固体撮像装置とその製造方法、及び電子機器
JPH0745805A (ja) オンチップマイクロレンズを備えた固体撮像装置
JP2006120845A (ja) 光電変換装置およびその製造方法
KR102805244B1 (ko) 이미지 센서 및 이미지 신호 프로세서를 감소시키기 위한 방법
US9204068B2 (en) Solid-state photodiode imaging device and method of manufacturing the same
JP2011243885A (ja) 固体撮像装置及びその製造方法
US9391227B2 (en) Manufacturing method of semiconductor device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110404

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110404

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131004

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140214