JP2009229502A - 表示装置、および、その製造方法 - Google Patents
表示装置、および、その製造方法 Download PDFInfo
- Publication number
- JP2009229502A JP2009229502A JP2008071255A JP2008071255A JP2009229502A JP 2009229502 A JP2009229502 A JP 2009229502A JP 2008071255 A JP2008071255 A JP 2008071255A JP 2008071255 A JP2008071255 A JP 2008071255A JP 2009229502 A JP2009229502 A JP 2009229502A
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- Prior art keywords
- semiconductor layer
- layer
- liquid crystal
- light
- display device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 145
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 114
- 238000005286 illumination Methods 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 21
- 229920005591 polysilicon Polymers 0.000 abstract description 18
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 230000031700 light absorption Effects 0.000 abstract description 2
- 239000013081 microcrystal Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 240
- 239000010408 film Substances 0.000 description 112
- 239000011521 glass Substances 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000012535 impurity Substances 0.000 description 16
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 239000012788 optical film Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 101100327840 Arabidopsis thaliana CHLI1 gene Proteins 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Chemical Vapour Deposition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Position Input By Displaying (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008071255A JP2009229502A (ja) | 2008-03-19 | 2008-03-19 | 表示装置、および、その製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008071255A JP2009229502A (ja) | 2008-03-19 | 2008-03-19 | 表示装置、および、その製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009229502A true JP2009229502A (ja) | 2009-10-08 |
JP2009229502A5 JP2009229502A5 (enrdf_load_stackoverflow) | 2011-02-24 |
Family
ID=41245030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008071255A Pending JP2009229502A (ja) | 2008-03-19 | 2008-03-19 | 表示装置、および、その製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2009229502A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110089914A (ko) * | 2010-02-02 | 2011-08-10 | 삼성전자주식회사 | 터치스크린 기판 및 이의 제조 방법 |
JP2012204562A (ja) * | 2011-03-25 | 2012-10-22 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
CN102800735A (zh) * | 2011-05-27 | 2012-11-28 | 索尼公司 | 光电转换元件和光电转换装置 |
JP2014500608A (ja) * | 2010-10-14 | 2014-01-09 | ユ−ジーン テクノロジー カンパニー.リミテッド | 3次元構造のメモリ素子を製造する方法及び装置 |
JP2016039328A (ja) * | 2014-08-08 | 2016-03-22 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02177372A (ja) * | 1988-12-27 | 1990-07-10 | Kyocera Corp | 光電変換装置 |
JPH05110123A (ja) * | 1991-10-15 | 1993-04-30 | Canon Inc | 光電変換装置とその製造方法 |
JPH05333369A (ja) * | 1992-06-03 | 1993-12-17 | Casio Comput Co Ltd | 液晶表示装置 |
JPH0622250A (ja) * | 1992-06-30 | 1994-01-28 | Casio Comput Co Ltd | 液晶表示装置およびそれを用いた機器 |
JPH0618846A (ja) * | 1992-07-03 | 1994-01-28 | Casio Comput Co Ltd | 入出力デバイスおよび入出力装置 |
JPH06163957A (ja) * | 1992-11-17 | 1994-06-10 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池およびその製法 |
JPH06194681A (ja) * | 1992-12-24 | 1994-07-15 | Casio Comput Co Ltd | 液晶表示回路 |
JP2000004036A (ja) * | 1998-06-16 | 2000-01-07 | Canon Inc | 微結晶半導体層の形成方法、および光起電力素子 |
JP2003142705A (ja) * | 2001-11-07 | 2003-05-16 | Mitsubishi Heavy Ind Ltd | 光起電力素子 |
JP2006301864A (ja) * | 2005-04-19 | 2006-11-02 | Sony Corp | 画像表示装置および物体の検出方法 |
-
2008
- 2008-03-19 JP JP2008071255A patent/JP2009229502A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02177372A (ja) * | 1988-12-27 | 1990-07-10 | Kyocera Corp | 光電変換装置 |
JPH05110123A (ja) * | 1991-10-15 | 1993-04-30 | Canon Inc | 光電変換装置とその製造方法 |
JPH05333369A (ja) * | 1992-06-03 | 1993-12-17 | Casio Comput Co Ltd | 液晶表示装置 |
JPH0622250A (ja) * | 1992-06-30 | 1994-01-28 | Casio Comput Co Ltd | 液晶表示装置およびそれを用いた機器 |
JPH0618846A (ja) * | 1992-07-03 | 1994-01-28 | Casio Comput Co Ltd | 入出力デバイスおよび入出力装置 |
JPH06163957A (ja) * | 1992-11-17 | 1994-06-10 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池およびその製法 |
JPH06194681A (ja) * | 1992-12-24 | 1994-07-15 | Casio Comput Co Ltd | 液晶表示回路 |
JP2000004036A (ja) * | 1998-06-16 | 2000-01-07 | Canon Inc | 微結晶半導体層の形成方法、および光起電力素子 |
JP2003142705A (ja) * | 2001-11-07 | 2003-05-16 | Mitsubishi Heavy Ind Ltd | 光起電力素子 |
JP2006301864A (ja) * | 2005-04-19 | 2006-11-02 | Sony Corp | 画像表示装置および物体の検出方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110089914A (ko) * | 2010-02-02 | 2011-08-10 | 삼성전자주식회사 | 터치스크린 기판 및 이의 제조 방법 |
KR101669964B1 (ko) * | 2010-02-02 | 2016-10-28 | 삼성디스플레이 주식회사 | 터치스크린 기판 및 이의 제조 방법 |
US9671637B2 (en) | 2010-02-02 | 2017-06-06 | Samsung Display Co., Ltd. | Touch screen substrate and method of manufacturing the same |
JP2014500608A (ja) * | 2010-10-14 | 2014-01-09 | ユ−ジーン テクノロジー カンパニー.リミテッド | 3次元構造のメモリ素子を製造する方法及び装置 |
JP2012204562A (ja) * | 2011-03-25 | 2012-10-22 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
CN102800735A (zh) * | 2011-05-27 | 2012-11-28 | 索尼公司 | 光电转换元件和光电转换装置 |
JP2013012696A (ja) * | 2011-05-27 | 2013-01-17 | Sony Corp | 光電変換素子および光電変換装置 |
JP2016039328A (ja) * | 2014-08-08 | 2016-03-22 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
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