JP2009212499A5 - - Google Patents

Download PDF

Info

Publication number
JP2009212499A5
JP2009212499A5 JP2009018245A JP2009018245A JP2009212499A5 JP 2009212499 A5 JP2009212499 A5 JP 2009212499A5 JP 2009018245 A JP2009018245 A JP 2009018245A JP 2009018245 A JP2009018245 A JP 2009018245A JP 2009212499 A5 JP2009212499 A5 JP 2009212499A5
Authority
JP
Japan
Prior art keywords
region
gate electrode
overlap
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009018245A
Other languages
English (en)
Japanese (ja)
Other versions
JP5520492B2 (ja
JP2009212499A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009018245A priority Critical patent/JP5520492B2/ja
Priority claimed from JP2009018245A external-priority patent/JP5520492B2/ja
Publication of JP2009212499A publication Critical patent/JP2009212499A/ja
Publication of JP2009212499A5 publication Critical patent/JP2009212499A5/ja
Application granted granted Critical
Publication of JP5520492B2 publication Critical patent/JP5520492B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009018245A 2008-02-07 2009-01-29 半導体装置 Expired - Fee Related JP5520492B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009018245A JP5520492B2 (ja) 2008-02-07 2009-01-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008027140 2008-02-07
JP2008027140 2008-02-07
JP2009018245A JP5520492B2 (ja) 2008-02-07 2009-01-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014077483A Division JP5847873B2 (ja) 2008-02-07 2014-04-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2009212499A JP2009212499A (ja) 2009-09-17
JP2009212499A5 true JP2009212499A5 (enExample) 2012-03-01
JP5520492B2 JP5520492B2 (ja) 2014-06-11

Family

ID=40938140

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009018245A Expired - Fee Related JP5520492B2 (ja) 2008-02-07 2009-01-29 半導体装置
JP2014077483A Expired - Fee Related JP5847873B2 (ja) 2008-02-07 2014-04-04 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014077483A Expired - Fee Related JP5847873B2 (ja) 2008-02-07 2014-04-04 半導体装置

Country Status (3)

Country Link
US (1) US7923733B2 (enExample)
JP (2) JP5520492B2 (enExample)
KR (1) KR101591950B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8284557B2 (en) * 2007-10-18 2012-10-09 Kyocera Corporation Circuit board, mounting structure, and method for manufacturing circuit board
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8928466B2 (en) * 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5863399B2 (ja) * 2011-11-07 2016-02-16 三菱電機株式会社 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
JP2014109453A (ja) * 2012-11-30 2014-06-12 Renesas Electronics Corp 半導体装置
US10685983B2 (en) 2016-11-11 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP2021132208A (ja) * 2020-02-19 2021-09-09 東レ株式会社 半導体装置およびその製造方法、ならびに無線通信装置
JPWO2024038577A1 (enExample) * 2022-08-19 2024-02-22

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127537A (ja) * 1990-09-19 1992-04-28 Nec Corp Ｍｏｓｆｅｔの製造方法
JP3203831B2 (ja) * 1992-10-23 2001-08-27 ソニー株式会社 静電破壊保護トランジスタ
US6512271B1 (en) * 1998-11-16 2003-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6531713B1 (en) 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6222236B1 (en) * 1999-04-30 2001-04-24 Motorola, Inc. Protection circuit and method for protecting a semiconductor device
JP3544499B2 (ja) * 1999-10-04 2004-07-21 セイコーインスツルメンツ株式会社 半導体集積回路装置
JP3688548B2 (ja) * 2000-03-14 2005-08-31 シャープ株式会社 画像表示装置
JP2002083974A (ja) * 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP2002152080A (ja) 2000-11-08 2002-05-24 Hitachi Ltd タグ及びそれに用いる半導体集積回路
JP2005019636A (ja) * 2003-06-25 2005-01-20 Toshiba Matsushita Display Technology Co Ltd 薄膜ダイオード及び薄膜トランジスタ
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
JP2006173538A (ja) * 2004-12-20 2006-06-29 Oki Electric Ind Co Ltd 半導体装置
US7588970B2 (en) 2005-06-10 2009-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007036216A (ja) * 2005-06-24 2007-02-08 Semiconductor Energy Lab Co Ltd 半導体装置及び無線通信システム
KR20080036168A (ko) 2005-06-24 2008-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 무선 통신 시스템
JP2007096211A (ja) * 2005-09-30 2007-04-12 Ricoh Co Ltd 半導体装置
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device

Similar Documents

Publication Publication Date Title
JP2009212499A5 (enExample)
JP2012146965A5 (ja) 半導体装置
JP2012134520A5 (ja) 表示装置
JP2013101360A5 (enExample)
JP2011238334A5 (enExample)
JP2011147121A5 (ja) 半導体装置
JP2011170340A5 (ja) 電子機器
JP2012138590A5 (ja) 表示装置
JP2012256813A5 (ja) 半導体装置
JP2011171702A5 (enExample)
JP2012064930A5 (ja) 半導体メモリ装置
JP2012256822A5 (ja) 半導体装置
JP2011151383A5 (enExample)
JP2011142621A5 (ja) 半導体装置
JP2012252329A5 (ja) 表示装置
JP2011166128A5 (enExample)
JP2013009313A5 (enExample)
JP2011166130A5 (enExample)
JP2012079293A5 (enExample)
JP2011151791A5 (enExample)
JP2010123938A5 (ja) 半導体装置
JP2011211171A5 (ja) 半導体装置及び電子機器
JP2011035388A5 (ja) 半導体装置
JP2010232651A5 (ja) 液晶表示装置
JP2011129892A5 (enExample)