JP2009212078A5 - - Google Patents
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- Publication number
- JP2009212078A5 JP2009212078A5 JP2008329271A JP2008329271A JP2009212078A5 JP 2009212078 A5 JP2009212078 A5 JP 2009212078A5 JP 2008329271 A JP2008329271 A JP 2008329271A JP 2008329271 A JP2008329271 A JP 2008329271A JP 2009212078 A5 JP2009212078 A5 JP 2009212078A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- functional film
- layer
- substrate
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 32
- 239000000463 material Substances 0.000 claims 22
- 230000031700 light absorption Effects 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 238000000859 sublimation Methods 0.000 claims 2
- 230000008022 sublimation Effects 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008329271A JP5112281B2 (ja) | 2007-12-28 | 2008-12-25 | 成膜用基板 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007338575 | 2007-12-28 | ||
| JP2007338575 | 2007-12-28 | ||
| JP2008026119 | 2008-02-06 | ||
| JP2008026119 | 2008-02-06 | ||
| JP2008329271A JP5112281B2 (ja) | 2007-12-28 | 2008-12-25 | 成膜用基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009212078A JP2009212078A (ja) | 2009-09-17 |
| JP2009212078A5 true JP2009212078A5 (https=) | 2012-01-19 |
| JP5112281B2 JP5112281B2 (ja) | 2013-01-09 |
Family
ID=40796975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008329271A Expired - Fee Related JP5112281B2 (ja) | 2007-12-28 | 2008-12-25 | 成膜用基板 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8080811B2 (https=) |
| JP (1) | JP5112281B2 (https=) |
| CN (1) | CN101471423B (https=) |
| TW (1) | TWI481733B (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101689519B1 (ko) * | 2007-12-26 | 2016-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법 |
| WO2009099002A1 (en) | 2008-02-04 | 2009-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing light-emitting device |
| WO2009107548A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
| JP5416987B2 (ja) * | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| JP5079722B2 (ja) * | 2008-03-07 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US8182863B2 (en) | 2008-03-17 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
| KR101629637B1 (ko) * | 2008-05-29 | 2016-06-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막방법 및 발광장치의 제조방법 |
| US20110136282A1 (en) * | 2008-08-05 | 2011-06-09 | Toray Industries, Inc. | Method for producing device |
| US8486736B2 (en) * | 2008-10-20 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
| JP5292263B2 (ja) * | 2008-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光素子の作製方法 |
| JP2010153127A (ja) * | 2008-12-24 | 2010-07-08 | Sony Corp | 表示装置 |
| JP5258666B2 (ja) * | 2009-04-22 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法および成膜用基板 |
| KR101169001B1 (ko) * | 2009-07-10 | 2012-07-26 | 주식회사 엔씰텍 | 증착장치의 증착용 기판, 상기 증착용 기판을 사용한 성막 방법 및 유기전계발광표시장치의 제조방법 |
| JP5257314B2 (ja) * | 2009-09-29 | 2013-08-07 | 大日本印刷株式会社 | 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法 |
| US8951816B2 (en) * | 2010-03-18 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Film forming method |
| TW202542110A (zh) | 2011-02-28 | 2025-11-01 | 日商半導體能源研究所股份有限公司 | 發光元件 |
| EP2660352A1 (en) * | 2012-05-02 | 2013-11-06 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Donor sheet and method for light induced forward transfer manufacturing |
| TWI650399B (zh) | 2012-08-03 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 發光元件 |
| US10043982B2 (en) | 2013-04-26 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display device, electronic device, and lighting device |
| KR20150056112A (ko) * | 2013-11-14 | 2015-05-26 | 삼성디스플레이 주식회사 | 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법 |
| CN104104755B (zh) * | 2014-06-25 | 2017-04-05 | 京东方科技集团股份有限公司 | 手机套 |
| KR102144855B1 (ko) * | 2014-09-03 | 2020-08-18 | 삼성디스플레이 주식회사 | 광학 마스크 |
| KR20160030002A (ko) * | 2014-09-05 | 2016-03-16 | 삼성디스플레이 주식회사 | 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법 |
| US20160104855A1 (en) | 2014-10-10 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Display Device, Electronic Device, and Lighting Device |
| KR101706752B1 (ko) * | 2015-02-17 | 2017-02-27 | 서울대학교산학협력단 | 호스트, 인광 도펀트 및 형광 도펀트를 포함하는 유기발광소자 |
| TWI704706B (zh) | 2015-03-09 | 2020-09-11 | 日商半導體能源研究所股份有限公司 | 發光元件、顯示裝置、電子裝置及照明設置 |
| CN106910844B (zh) * | 2015-12-22 | 2019-03-26 | 昆山工研院新型平板显示技术中心有限公司 | Tft基板的蒸镀方法 |
| US20180171468A1 (en) | 2016-12-21 | 2018-06-21 | Ncc Nano, Llc | Method for deposting a functional material on a substrate |
| KR102180071B1 (ko) | 2017-10-31 | 2020-11-17 | 엘지디스플레이 주식회사 | 초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치 |
| WO2019113891A1 (en) * | 2017-12-14 | 2019-06-20 | Boe Technology Group Co., Ltd. | Donor substrate for depositing deposition material on acceptor substrate, method of depositing deposition material, and method of fabricating donor substrate |
| CN109962149B (zh) * | 2017-12-14 | 2020-10-27 | Tcl科技集团股份有限公司 | 一种封装薄膜及其制备方法、光电器件 |
| WO2019171197A1 (ja) | 2018-03-07 | 2019-09-12 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、電子機器、有機化合物及び照明装置 |
| US12545834B2 (en) | 2018-07-11 | 2026-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, electronic device, organic compound, and lighting device |
| JP7341172B2 (ja) | 2019-02-06 | 2023-09-08 | 株式会社半導体エネルギー研究所 | 発光デバイス、電子機器及び照明装置 |
| WO2020217129A1 (ja) | 2019-04-25 | 2020-10-29 | 株式会社半導体エネルギー研究所 | 発光デバイス、発光装置、電子機器、および照明装置 |
| CN110148678A (zh) * | 2019-04-29 | 2019-08-20 | 深圳市华星光电半导体显示技术有限公司 | 辅助电极转移结构及显示面板的制作方法 |
| WO2021044262A1 (ja) | 2019-09-06 | 2021-03-11 | 株式会社半導体エネルギー研究所 | 発光デバイス、表示装置、電子機器、有機化合物及び照明装置 |
| CN111474607A (zh) * | 2020-04-21 | 2020-07-31 | Tcl华星光电技术有限公司 | 一种用于降低反射率的涂层、显示面板及显示装置 |
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| JP2006309995A (ja) | 2005-04-27 | 2006-11-09 | Sony Corp | 転写用基板および表示装置の製造方法ならびに表示装置 |
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| TWI427702B (zh) | 2006-07-28 | 2014-02-21 | 半導體能源研究所股份有限公司 | 顯示裝置的製造方法 |
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| US7994021B2 (en) | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| KR101346246B1 (ko) | 2006-08-24 | 2013-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 제작방법 |
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| KR20090028413A (ko) | 2007-09-13 | 2009-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 제작방법 및 증착용 기판 |
| KR20090041314A (ko) | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판 및 발광장치의 제조방법 |
| KR20090041316A (ko) | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막 방법 및 발광 장치의 제작 방법 |
| US8153201B2 (en) | 2007-10-23 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing light-emitting device, and evaporation donor substrate |
| US8425974B2 (en) | 2007-11-29 | 2013-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation donor substrate and method for manufacturing light-emitting device |
| KR101689519B1 (ko) | 2007-12-26 | 2016-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법 |
-
2008
- 2008-12-22 US US12/341,424 patent/US8080811B2/en not_active Expired - Fee Related
- 2008-12-24 TW TW097150461A patent/TWI481733B/zh not_active IP Right Cessation
- 2008-12-25 JP JP2008329271A patent/JP5112281B2/ja not_active Expired - Fee Related
- 2008-12-26 CN CN2008101906840A patent/CN101471423B/zh not_active Expired - Fee Related
-
2011
- 2011-12-19 US US13/329,624 patent/US8435811B2/en not_active Expired - Fee Related
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