JP2009212078A5 - - Google Patents

Download PDF

Info

Publication number
JP2009212078A5
JP2009212078A5 JP2008329271A JP2008329271A JP2009212078A5 JP 2009212078 A5 JP2009212078 A5 JP 2009212078A5 JP 2008329271 A JP2008329271 A JP 2008329271A JP 2008329271 A JP2008329271 A JP 2008329271A JP 2009212078 A5 JP2009212078 A5 JP 2009212078A5
Authority
JP
Japan
Prior art keywords
film
functional film
layer
substrate
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008329271A
Other languages
English (en)
Japanese (ja)
Other versions
JP5112281B2 (ja
JP2009212078A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008329271A priority Critical patent/JP5112281B2/ja
Priority claimed from JP2008329271A external-priority patent/JP5112281B2/ja
Publication of JP2009212078A publication Critical patent/JP2009212078A/ja
Publication of JP2009212078A5 publication Critical patent/JP2009212078A5/ja
Application granted granted Critical
Publication of JP5112281B2 publication Critical patent/JP5112281B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008329271A 2007-12-28 2008-12-25 成膜用基板 Expired - Fee Related JP5112281B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008329271A JP5112281B2 (ja) 2007-12-28 2008-12-25 成膜用基板

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007338575 2007-12-28
JP2007338575 2007-12-28
JP2008026119 2008-02-06
JP2008026119 2008-02-06
JP2008329271A JP5112281B2 (ja) 2007-12-28 2008-12-25 成膜用基板

Publications (3)

Publication Number Publication Date
JP2009212078A JP2009212078A (ja) 2009-09-17
JP2009212078A5 true JP2009212078A5 (https=) 2012-01-19
JP5112281B2 JP5112281B2 (ja) 2013-01-09

Family

ID=40796975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008329271A Expired - Fee Related JP5112281B2 (ja) 2007-12-28 2008-12-25 成膜用基板

Country Status (4)

Country Link
US (2) US8080811B2 (https=)
JP (1) JP5112281B2 (https=)
CN (1) CN101471423B (https=)
TW (1) TWI481733B (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101689519B1 (ko) * 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
WO2009099002A1 (en) 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5079722B2 (ja) * 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
US8182863B2 (en) 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
KR101629637B1 (ko) * 2008-05-29 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법 및 발광장치의 제조방법
US20110136282A1 (en) * 2008-08-05 2011-06-09 Toray Industries, Inc. Method for producing device
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5292263B2 (ja) * 2008-12-05 2013-09-18 株式会社半導体エネルギー研究所 成膜方法及び発光素子の作製方法
JP2010153127A (ja) * 2008-12-24 2010-07-08 Sony Corp 表示装置
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
KR101169001B1 (ko) * 2009-07-10 2012-07-26 주식회사 엔씰텍 증착장치의 증착용 기판, 상기 증착용 기판을 사용한 성막 방법 및 유기전계발광표시장치의 제조방법
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
US8951816B2 (en) * 2010-03-18 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Film forming method
TW202542110A (zh) 2011-02-28 2025-11-01 日商半導體能源研究所股份有限公司 發光元件
EP2660352A1 (en) * 2012-05-02 2013-11-06 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Donor sheet and method for light induced forward transfer manufacturing
TWI650399B (zh) 2012-08-03 2019-02-11 日商半導體能源研究所股份有限公司 發光元件
US10043982B2 (en) 2013-04-26 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
KR20150056112A (ko) * 2013-11-14 2015-05-26 삼성디스플레이 주식회사 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법
CN104104755B (zh) * 2014-06-25 2017-04-05 京东方科技集团股份有限公司 手机套
KR102144855B1 (ko) * 2014-09-03 2020-08-18 삼성디스플레이 주식회사 광학 마스크
KR20160030002A (ko) * 2014-09-05 2016-03-16 삼성디스플레이 주식회사 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법
US20160104855A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Display Device, Electronic Device, and Lighting Device
KR101706752B1 (ko) * 2015-02-17 2017-02-27 서울대학교산학협력단 호스트, 인광 도펀트 및 형광 도펀트를 포함하는 유기발광소자
TWI704706B (zh) 2015-03-09 2020-09-11 日商半導體能源研究所股份有限公司 發光元件、顯示裝置、電子裝置及照明設置
CN106910844B (zh) * 2015-12-22 2019-03-26 昆山工研院新型平板显示技术中心有限公司 Tft基板的蒸镀方法
US20180171468A1 (en) 2016-12-21 2018-06-21 Ncc Nano, Llc Method for deposting a functional material on a substrate
KR102180071B1 (ko) 2017-10-31 2020-11-17 엘지디스플레이 주식회사 초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
WO2019113891A1 (en) * 2017-12-14 2019-06-20 Boe Technology Group Co., Ltd. Donor substrate for depositing deposition material on acceptor substrate, method of depositing deposition material, and method of fabricating donor substrate
CN109962149B (zh) * 2017-12-14 2020-10-27 Tcl科技集团股份有限公司 一种封装薄膜及其制备方法、光电器件
WO2019171197A1 (ja) 2018-03-07 2019-09-12 株式会社半導体エネルギー研究所 発光素子、表示装置、電子機器、有機化合物及び照明装置
US12545834B2 (en) 2018-07-11 2026-02-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, electronic device, organic compound, and lighting device
JP7341172B2 (ja) 2019-02-06 2023-09-08 株式会社半導体エネルギー研究所 発光デバイス、電子機器及び照明装置
WO2020217129A1 (ja) 2019-04-25 2020-10-29 株式会社半導体エネルギー研究所 発光デバイス、発光装置、電子機器、および照明装置
CN110148678A (zh) * 2019-04-29 2019-08-20 深圳市华星光电半导体显示技术有限公司 辅助电极转移结构及显示面板的制作方法
WO2021044262A1 (ja) 2019-09-06 2021-03-11 株式会社半導体エネルギー研究所 発光デバイス、表示装置、電子機器、有機化合物及び照明装置
CN111474607A (zh) * 2020-04-21 2020-07-31 Tcl华星光电技术有限公司 一种用于降低反射率的涂层、显示面板及显示装置

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3992219A (en) * 1971-11-01 1976-11-16 May & Baker Limited Zinc and manganese pigments
DE3023131A1 (de) * 1979-06-20 1981-01-08 Canon Kk Verfahren zum herstellen eines farbfilters
JP3801730B2 (ja) 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマcvd装置及びそれを用いた薄膜形成方法
US5937272A (en) 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
US5851709A (en) 1997-10-31 1998-12-22 Eastman Kodak Company Method for selective transfer of a color organic layer
JP4547723B2 (ja) 1998-03-09 2010-09-22 セイコーエプソン株式会社 有機el表示装置の製造方法
US6165543A (en) 1998-06-17 2000-12-26 Nec Corporation Method of making organic EL device and organic EL transfer base plate
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP3740557B2 (ja) 1999-03-09 2006-02-01 独立行政法人産業技術総合研究所 有機薄膜作製方法および有機薄膜作製装置
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
JP4590663B2 (ja) 1999-10-29 2010-12-01 セイコーエプソン株式会社 カラーフィルタの製造方法
TW501379B (en) 2000-07-25 2002-09-01 Eastman Kodak Co Method of making organic electroluminescent device using laser transfer
US6699597B2 (en) 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
US6695029B2 (en) 2001-12-12 2004-02-24 Eastman Kodak Company Apparatus for permitting transfer of organic material from a donor to form a layer in an OLED device
SG114589A1 (en) 2001-12-12 2005-09-28 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
US6610455B1 (en) 2002-01-30 2003-08-26 Eastman Kodak Company Making electroluminscent display devices
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
US6566032B1 (en) 2002-05-08 2003-05-20 Eastman Kodak Company In-situ method for making OLED devices that are moisture or oxygen-sensitive
JP2004071554A (ja) 2002-07-25 2004-03-04 Sanyo Electric Co Ltd 有機elパネルおよびその製造方法
US6811938B2 (en) 2002-08-29 2004-11-02 Eastman Kodak Company Using fiducial marks on a substrate for laser transfer of organic material from a donor to a substrate
JP2004103406A (ja) 2002-09-10 2004-04-02 Sony Corp 薄膜パターン形成方法および装置並びに有機el表示装置の製造方法
US20040191564A1 (en) 2002-12-17 2004-09-30 Samsung Sdi Co., Ltd. Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US20050145326A1 (en) 2004-01-05 2005-07-07 Eastman Kodak Company Method of making an OLED device
KR100708644B1 (ko) 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
JP2006086069A (ja) 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
KR100793355B1 (ko) 2004-10-05 2008-01-11 삼성에스디아이 주식회사 도너 기판의 제조방법 및 유기전계발광표시장치의 제조방법
KR100667069B1 (ko) 2004-10-19 2007-01-10 삼성에스디아이 주식회사 도너 기판 및 그를 사용한 유기전계발광표시장치의 제조방법
KR20060109373A (ko) 2005-04-15 2006-10-20 삼성전기주식회사 유기전자소자 제조방법
JP2006309995A (ja) 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
TWI307612B (en) 2005-04-27 2009-03-11 Sony Corp Transfer method and transfer apparatus
WO2007015465A1 (ja) 2005-08-01 2007-02-08 Pioneer Corporation 有機膜被熱転写体製造方法、有機膜被熱転写体
JP4449890B2 (ja) 2005-11-21 2010-04-14 ソニー株式会社 転写用基板および転写方法ならびに表示装置の製造方法
TWI427702B (zh) 2006-07-28 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法
TWI412079B (zh) 2006-07-28 2013-10-11 半導體能源研究所股份有限公司 製造顯示裝置的方法
US7994021B2 (en) 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101346246B1 (ko) 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US8563431B2 (en) 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101563237B1 (ko) 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
KR20090028413A (ko) 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
KR20090041314A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
KR20090041316A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
US8153201B2 (en) 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
US8425974B2 (en) 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
KR101689519B1 (ko) 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법

Similar Documents

Publication Publication Date Title
JP2009212078A5 (https=)
JP2009123692A5 (https=)
JP6118525B2 (ja) 有機エレクトロルミネッセンス素子および電子機器
CN107923718A (zh) 用于辐射冷却和加热的系统和方法
JP2009123693A5 (ja) 蒸着用基板
KR102393853B1 (ko) 광학적으로 강화된 고체-상태 광 컨버터
JP2009174048A5 (ja) 蒸着用基板、蒸着用基板の作製方法、および蒸着方法
JP6828920B2 (ja) 加熱式光源
TW201007230A (en) Wire grid-type polarizing element and manufacturing method thereof
US11579350B2 (en) Wire grid polarization plate having dielectric layer with concave portions
JP5685350B2 (ja) 基板の特定の場所に蒸着するための転写マスク及び当該転写マスクを製造するための方法
JP2013101007A5 (https=)
TW201316379A (zh) 自複合結構分離出一層之方法
JP5896889B2 (ja) 光学選択膜
JP2011508441A5 (https=)
JP2008083704A5 (https=)
Alpuim et al. Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers
TW201722215A (zh) 可撓曲元件
JP2004140323A (ja) 半導体レーザ装置およびその製造方法
Peng et al. Indium-free transparent TiOx/Ag/WO3 stacked composite electrode with improved moisture resistance
CN112639547A (zh) 耐用的高性能线栅偏振器
JP2011070774A5 (ja) 成膜方法
JP7575192B2 (ja) 偏光板、光学機器及び偏光板の製造方法
TWI430327B (zh) 熱輻射發射器及其製法
CN104183782A (zh) 供体基底