JP2009198990A5 - - Google Patents

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Publication number
JP2009198990A5
JP2009198990A5 JP2008043124A JP2008043124A JP2009198990A5 JP 2009198990 A5 JP2009198990 A5 JP 2009198990A5 JP 2008043124 A JP2008043124 A JP 2008043124A JP 2008043124 A JP2008043124 A JP 2008043124A JP 2009198990 A5 JP2009198990 A5 JP 2009198990A5
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JP
Japan
Prior art keywords
threshold correction
forming
thin film
film transistor
gate
Prior art date
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Granted
Application number
JP2008043124A
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English (en)
Japanese (ja)
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JP5052370B2 (ja
JP2009198990A (ja
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Publication date
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Priority to JP2008043124A priority Critical patent/JP5052370B2/ja
Priority claimed from JP2008043124A external-priority patent/JP5052370B2/ja
Publication of JP2009198990A publication Critical patent/JP2009198990A/ja
Publication of JP2009198990A5 publication Critical patent/JP2009198990A5/ja
Application granted granted Critical
Publication of JP5052370B2 publication Critical patent/JP5052370B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008043124A 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法 Expired - Fee Related JP5052370B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008043124A JP5052370B2 (ja) 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008043124A JP5052370B2 (ja) 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法

Publications (3)

Publication Number Publication Date
JP2009198990A JP2009198990A (ja) 2009-09-03
JP2009198990A5 true JP2009198990A5 (enExample) 2010-12-16
JP5052370B2 JP5052370B2 (ja) 2012-10-17

Family

ID=41142500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008043124A Expired - Fee Related JP5052370B2 (ja) 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法

Country Status (1)

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JP (1) JP5052370B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015033881A1 (ja) * 2013-09-04 2015-03-12 シャープ株式会社 有機薄膜トランジスタ
CN104362127A (zh) * 2014-11-21 2015-02-18 深圳市华星光电技术有限公司 薄膜晶体管基板的制作方法及制造设备
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140570A (ja) * 2001-11-06 2003-05-16 Matsushita Electric Ind Co Ltd エレクトロルミネッセンス表示装置
JP2004103719A (ja) * 2002-09-06 2004-04-02 Canon Inc 有機半導体素子
JP2005004183A (ja) * 2003-05-20 2005-01-06 Advanced Lcd Technologies Development Center Co Ltd 発光型表示装置
KR101272328B1 (ko) * 2005-12-14 2013-06-07 삼성디스플레이 주식회사 잉크젯 프린팅 시스템 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
TWI336953B (en) * 2006-03-29 2011-02-01 Pioneer Corp Organic electroluminescent display panel and manufacturing method thereof

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