JP5052370B2 - 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法 - Google Patents

薄膜トランジスタアレイ基板の製造方法及び閾値補正方法 Download PDF

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Publication number
JP5052370B2
JP5052370B2 JP2008043124A JP2008043124A JP5052370B2 JP 5052370 B2 JP5052370 B2 JP 5052370B2 JP 2008043124 A JP2008043124 A JP 2008043124A JP 2008043124 A JP2008043124 A JP 2008043124A JP 5052370 B2 JP5052370 B2 JP 5052370B2
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Japan
Prior art keywords
thin film
film transistor
gate
array substrate
transistor array
Prior art date
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Expired - Fee Related
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JP2008043124A
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English (en)
Japanese (ja)
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JP2009198990A5 (enExample
JP2009198990A (ja
Inventor
有宣 鐘ヶ江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2008043124A priority Critical patent/JP5052370B2/ja
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Publication of JP2009198990A5 publication Critical patent/JP2009198990A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Thin Film Transistor (AREA)
JP2008043124A 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法 Expired - Fee Related JP5052370B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008043124A JP5052370B2 (ja) 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法

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Application Number Priority Date Filing Date Title
JP2008043124A JP5052370B2 (ja) 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法

Publications (3)

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JP2009198990A JP2009198990A (ja) 2009-09-03
JP2009198990A5 JP2009198990A5 (enExample) 2010-12-16
JP5052370B2 true JP5052370B2 (ja) 2012-10-17

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JP2008043124A Expired - Fee Related JP5052370B2 (ja) 2008-02-25 2008-02-25 薄膜トランジスタアレイ基板の製造方法及び閾値補正方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015033881A1 (ja) * 2013-09-04 2015-03-12 シャープ株式会社 有機薄膜トランジスタ
CN104362127A (zh) * 2014-11-21 2015-02-18 深圳市华星光电技术有限公司 薄膜晶体管基板的制作方法及制造设备
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140570A (ja) * 2001-11-06 2003-05-16 Matsushita Electric Ind Co Ltd エレクトロルミネッセンス表示装置
JP2004103719A (ja) * 2002-09-06 2004-04-02 Canon Inc 有機半導体素子
JP2005004183A (ja) * 2003-05-20 2005-01-06 Advanced Lcd Technologies Development Center Co Ltd 発光型表示装置
KR101272328B1 (ko) * 2005-12-14 2013-06-07 삼성디스플레이 주식회사 잉크젯 프린팅 시스템 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
TWI336953B (en) * 2006-03-29 2011-02-01 Pioneer Corp Organic electroluminescent display panel and manufacturing method thereof

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JP2009198990A (ja) 2009-09-03

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