JP2009194066A - 加熱装置 - Google Patents
加熱装置 Download PDFInfo
- Publication number
- JP2009194066A JP2009194066A JP2008031716A JP2008031716A JP2009194066A JP 2009194066 A JP2009194066 A JP 2009194066A JP 2008031716 A JP2008031716 A JP 2008031716A JP 2008031716 A JP2008031716 A JP 2008031716A JP 2009194066 A JP2009194066 A JP 2009194066A
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- Prior art keywords
- base plate
- filament
- substrate
- conductive heater
- plate
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 55
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 11
- 239000004917 carbon fiber Substances 0.000 claims abstract description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 41
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 17
- 229910052750 molybdenum Inorganic materials 0.000 description 17
- 239000011733 molybdenum Substances 0.000 description 17
- 229910052799 carbon Inorganic materials 0.000 description 13
- 239000002296 pyrolytic carbon Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002131 composite material Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052702 rhenium Inorganic materials 0.000 description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Control Of Resistance Heating (AREA)
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】真空加熱容器1の内部のフィラメント3で発生した熱電子を加速して真空加熱容器1の一面を構成する導電性ヒータ2に衝突させて発熱させる加熱装置において、フィラメント3をフィラメント支柱4により固定するベース板6に、炭素繊維からなる板体を用いた。
【選択図】図1
Description
2…導電性ヒータ
3…フィラメント
4…第1の支柱(フィラメント支柱)
5…第1の熱反射板
6…ベース板
7…第2の熱反射板
8…第2の支柱
9…第3の熱反射板
10…絶縁碍子
11…中間ベース板
12…第3の支柱
13…水冷フランジ
Claims (2)
- 減圧下で基板を載置又は対向して加熱する真空加熱容器の内部にベース板を配置して、当該ベース板に支持された支柱に固定されたフィラメントで発生した熱電子を加速して、前記真空加熱容器の一面を構成する導電性ヒータに衝突させて当該導電性ヒータを発熱させる加熱装置において、
前記ベース板が、炭素繊維からなる板体であることを特徴とする加熱装置。 - 前記ベース板を、カーボン材料を含む熱反射板により、上下各1枚以上で挟んでいることを特徴とする請求項1記載の加熱装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008031716A JP4520512B2 (ja) | 2008-02-13 | 2008-02-13 | 加熱装置 |
US12/368,525 US8032015B2 (en) | 2008-02-13 | 2009-02-10 | Heating apparatus, heating method, and semiconductor device manufacturing method |
CN2009100074432A CN101510512B (zh) | 2008-02-13 | 2009-02-13 | 加热设备、加热方法以及半导体装置制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008031716A JP4520512B2 (ja) | 2008-02-13 | 2008-02-13 | 加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009194066A true JP2009194066A (ja) | 2009-08-27 |
JP4520512B2 JP4520512B2 (ja) | 2010-08-04 |
Family
ID=40938959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008031716A Active JP4520512B2 (ja) | 2008-02-13 | 2008-02-13 | 加熱装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8032015B2 (ja) |
JP (1) | JP4520512B2 (ja) |
CN (1) | CN101510512B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008123111A1 (ja) * | 2007-03-20 | 2008-10-16 | Canon Anelva Corporation | 基板加熱処理装置及び基板加熱処理方法 |
JP4288309B2 (ja) * | 2007-09-03 | 2009-07-01 | キヤノンアネルバ株式会社 | 基板熱処理装置及び基板の熱処理方法 |
US8452166B2 (en) * | 2008-07-01 | 2013-05-28 | Applied Materials, Inc. | Apparatus and method for measuring radiation energy during thermal processing |
JP5620090B2 (ja) * | 2008-12-15 | 2014-11-05 | キヤノンアネルバ株式会社 | 基板処理装置、熱処理基板の製造方法及び半導体デバイスの製造方法 |
JP2010205922A (ja) * | 2009-03-03 | 2010-09-16 | Canon Anelva Corp | 基板熱処理装置及び基板の製造方法 |
JP2010251718A (ja) * | 2009-03-27 | 2010-11-04 | Canon Anelva Corp | 加熱装置の温度制御方法及び記憶媒体 |
CN102863147B (zh) * | 2012-09-26 | 2014-10-29 | 深圳市华星光电技术有限公司 | 对基板进行烤焙处理的装置及方法 |
CN103871928B (zh) * | 2012-12-14 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 半导体设备及其加热器 |
WO2018051494A1 (ja) * | 2016-09-16 | 2018-03-22 | キヤノンアネルバ株式会社 | 加熱装置、基板加熱装置および半導体デバイスの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003149398A (ja) * | 2001-11-07 | 2003-05-21 | Mitsubishi Heavy Ind Ltd | 長尺低エネルギ電子線照射装置 |
JP2006156686A (ja) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | 熱処理システム |
JP2007280905A (ja) * | 2006-04-12 | 2007-10-25 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
JP2007287969A (ja) * | 2006-04-18 | 2007-11-01 | Ihi Corp | 基板アニール装置用の基板支持装置 |
JP2008077995A (ja) * | 2006-09-22 | 2008-04-03 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1045474A (ja) | 1996-08-01 | 1998-02-17 | Toyo Tanso Kk | 熱分解炭素被覆黒鉛材の製造方法 |
JP2912913B1 (ja) | 1998-06-03 | 1999-06-28 | 助川電気工業株式会社 | 板体加熱装置 |
JP2912613B1 (ja) | 1998-06-17 | 1999-06-28 | 助川電気工業株式会社 | 板体加熱装置 |
JP2912616B1 (ja) | 1998-07-17 | 1999-06-28 | 助川電気工業株式会社 | 板体加熱装置 |
JP4354987B2 (ja) * | 2004-02-27 | 2009-10-28 | 株式会社日立国際電気 | 基板処理装置 |
JP2007005582A (ja) * | 2005-06-24 | 2007-01-11 | Asm Japan Kk | 基板搬送装置及びそれを搭載した半導体基板製造装置 |
JP2008166729A (ja) * | 2006-12-08 | 2008-07-17 | Canon Anelva Corp | 基板加熱処理装置及び半導体製造方法 |
-
2008
- 2008-02-13 JP JP2008031716A patent/JP4520512B2/ja active Active
-
2009
- 2009-02-10 US US12/368,525 patent/US8032015B2/en active Active
- 2009-02-13 CN CN2009100074432A patent/CN101510512B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003149398A (ja) * | 2001-11-07 | 2003-05-21 | Mitsubishi Heavy Ind Ltd | 長尺低エネルギ電子線照射装置 |
JP2006156686A (ja) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | 熱処理システム |
JP2007280905A (ja) * | 2006-04-12 | 2007-10-25 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
JP2007287969A (ja) * | 2006-04-18 | 2007-11-01 | Ihi Corp | 基板アニール装置用の基板支持装置 |
JP2008077995A (ja) * | 2006-09-22 | 2008-04-03 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
Also Published As
Publication number | Publication date |
---|---|
US8032015B2 (en) | 2011-10-04 |
JP4520512B2 (ja) | 2010-08-04 |
CN101510512A (zh) | 2009-08-19 |
CN101510512B (zh) | 2011-02-16 |
US20090202231A1 (en) | 2009-08-13 |
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