JP2009189006A - 光受信回路 - Google Patents
光受信回路 Download PDFInfo
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- JP2009189006A JP2009189006A JP2009023881A JP2009023881A JP2009189006A JP 2009189006 A JP2009189006 A JP 2009189006A JP 2009023881 A JP2009023881 A JP 2009023881A JP 2009023881 A JP2009023881 A JP 2009023881A JP 2009189006 A JP2009189006 A JP 2009189006A
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- Prior art keywords
- current
- differential amplifier
- transistor
- circuit
- type mosfet
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- 230000003287 optical effect Effects 0.000 title claims abstract description 66
- 239000003990 capacitor Substances 0.000 description 14
- 230000007423 decrease Effects 0.000 description 13
- 238000001514 detection method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
- H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
Abstract
【解決手段】光受信回路1は、光信号を受け光電流Ipdを生成するPD10と、PD10に接続された第1の電流経路23a、および光電流Ipdに対応するモニタ電流Imonを生成する第2の電流経路23bを含むカレントミラー回路を有する電流モニタ回路20とを備える。電流モニタ回路20は、第1の電流経路23aに光電流Ipdを供給する第1のp型MOSFET21と、第2の電流経路23bにモニタ電流Imonを供給する第2のp型MOSFET22とを有しており、第1及び第2のp型MOSFET21,22のバイアス条件は互いに等しく設定されている。
【選択図】図1
Description
Claims (5)
- 光信号を受け光電流を生成するフォトダイオードと、
前記フォトダイオードに接続された第1の電流経路、および前記光電流に対応するモニタ電流が流れる第2の電流経路を含むカレントミラー回路を有する電流モニタ回路と
を備え、
前記電流モニタ回路は、
前記第1の電流経路に前記光電流を供給する第1のトランジスタと、
前記第2の電流経路に前記モニタ電流を供給する第2のトランジスタと
を有しており、
前記第1及び第2のトランジスタのバイアス条件が互いに等しく設定され、且つ、前記第1の電流経路が所定電位に保持されている、光受信回路。 - 前記電流モニタ回路は、第1及び第2の差動増幅器と、前記第1の差動増幅器からの出力信号を制御電極に受ける第3のトランジスタと、バイアス電源とを更に有しており、
前記第1及び第2のトランジスタの制御電極が、相互に接続され且つ前記第2の差動増幅器からの出力信号を受け、
前記第1及び第2のトランジスタの正側電流電極が共に正の電源電位線に接続されており、
前記第1のトランジスタの負側電流電極と、前記フォトダイオード並びに前記第1及び第2の差動増幅器の各非反転入力端子とが相互に接続され、前記第1のトランジスタの負側電流電極から前記光電流が供給され、
前記第2のトランジスタの負側電流電極と、前記第3のトランジスタの正側電流電極及び前記第1の差動増幅器の反転入力端子とが相互に接続され、前記第3のトランジスタの負側電流電極から前記モニタ電流が供給され、
前記第2の差動増幅器の反転入力端子に前記バイアス電源が接続され、
前記第1及び第2の差動増幅器の各非反転入力端子の電位が、前記第2の差動増幅器の反転入力端子と非反転入力端子との間の仮想短絡によってそれぞれ前記バイアス電源の電位に設定され、前記第2のトランジスタの負側電流電極が、前記第1の差動増幅器の反転入力端子と非反転入力端子との間の仮想短絡によって前記バイアス電源の電位に設定される、請求項1に記載の光受信回路。 - 前記第1のトランジスタの制御電極と負側電流電極との間に接続された第1の容量素子と、
前記フォトダイオードに対して並列に接続された第2の容量素子と
を更に備え、
前記第2の差動増幅器が、その利得及び出力インピーダンスが動的に変化する機能を備える、請求項2に記載の光受信回路。 - 前記第2の差動増幅器の前記機能は、前記光信号の強度が所定の値より小さい場合に前記第2の差動増幅器の利得及び出力インピーダンスを低下させる、請求項3に記載の光受信回路。
- 前記電流モニタ回路において、前記第1のトランジスタ及び前記第2の差動増幅器によって帰還回路が構成されており、
前記帰還回路は、前記第1の容量素子の容量、及び前記第2の差動増幅器の出力インピーダンスにより形成される第1の極と、前記第2の容量素子、及び前記第1のトランジスタの正側電流端子と負側電流端子との間の等価抵抗値により形成される第2の極とを有し、
前記光信号の強度が前記所定の値より小さい場合に、前記第1の極の極周波数が前記帰還回路の開利得が1となる周波数より大きい、請求項3または4に記載の光受信回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US686908P | 2008-02-04 | 2008-02-04 | |
US61/006,869 | 2008-02-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009189006A true JP2009189006A (ja) | 2009-08-20 |
JP5088334B2 JP5088334B2 (ja) | 2012-12-05 |
Family
ID=40938973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009023881A Active JP5088334B2 (ja) | 2008-02-04 | 2009-02-04 | 光受信回路 |
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US (1) | US8121495B2 (ja) |
JP (1) | JP5088334B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011228914A (ja) * | 2010-04-19 | 2011-11-10 | Toshiba Corp | 受光回路および受光回路を備える電子機器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7912380B2 (en) * | 2005-03-25 | 2011-03-22 | Sumitomo Electric Industries, Ltd. | Optical receiver |
US8450676B2 (en) * | 2009-12-12 | 2013-05-28 | Iptronics A/S | Optical receiver |
JP5747532B2 (ja) * | 2011-02-01 | 2015-07-15 | 住友電気工業株式会社 | 光受信器 |
US9502115B2 (en) * | 2014-03-28 | 2016-11-22 | Stmicroelectronics S.R.L. | Amplifier stage |
GB2523426B (en) * | 2014-09-16 | 2016-04-06 | Hilight Semiconductor Ltd | Trans-impedance amplifier arrangement and control module |
CN108627243B (zh) * | 2017-03-17 | 2020-11-24 | 敦宏科技股份有限公司 | 具光二极管漏电流补偿功能的环境光感测电路 |
CN108111230B (zh) * | 2018-01-19 | 2023-07-21 | 厦门优迅高速芯片有限公司 | 一种复用光通信光接收组件mon管脚的电路 |
US11552600B2 (en) * | 2019-08-28 | 2023-01-10 | Cisco Technology, Inc. | Photodiode cathode biasing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661859A (ja) * | 1992-08-10 | 1994-03-04 | Hitachi Ltd | 半導体集積回路装置及びa/d変換回路 |
JPH09321549A (ja) * | 1996-05-31 | 1997-12-12 | Olympus Optical Co Ltd | 電流入力回路 |
JPH11186971A (ja) * | 1997-12-19 | 1999-07-09 | Sumitomo Electric Ind Ltd | 光受信器 |
JP2007102563A (ja) * | 2005-10-05 | 2007-04-19 | Asahi Kasei Microsystems Kk | 電流発生回路 |
JP3135667U (ja) * | 2006-06-02 | 2007-09-27 | 普誠科技股▲ふん▼有限公司 | 発光装置及びその電流ミラー回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140840A (ja) * | 1997-07-16 | 1999-02-12 | Sumitomo Electric Ind Ltd | 光受信器 |
US20030178552A1 (en) * | 2002-02-08 | 2003-09-25 | Hofmeister Rudolf J. | High dynamic range optical signal receiver |
US7439480B2 (en) * | 2004-03-05 | 2008-10-21 | Finisar Corporation | Regulated current mirror |
US20050224697A1 (en) * | 2004-04-08 | 2005-10-13 | Naoki Nishiyama | Light-receiving circuit capable of expanding a dynamic range of an optical input |
-
2009
- 2009-02-03 US US12/320,745 patent/US8121495B2/en active Active
- 2009-02-04 JP JP2009023881A patent/JP5088334B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661859A (ja) * | 1992-08-10 | 1994-03-04 | Hitachi Ltd | 半導体集積回路装置及びa/d変換回路 |
JPH09321549A (ja) * | 1996-05-31 | 1997-12-12 | Olympus Optical Co Ltd | 電流入力回路 |
JPH11186971A (ja) * | 1997-12-19 | 1999-07-09 | Sumitomo Electric Ind Ltd | 光受信器 |
JP2007102563A (ja) * | 2005-10-05 | 2007-04-19 | Asahi Kasei Microsystems Kk | 電流発生回路 |
JP3135667U (ja) * | 2006-06-02 | 2007-09-27 | 普誠科技股▲ふん▼有限公司 | 発光装置及びその電流ミラー回路 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011228914A (ja) * | 2010-04-19 | 2011-11-10 | Toshiba Corp | 受光回路および受光回路を備える電子機器 |
Also Published As
Publication number | Publication date |
---|---|
US20090202259A1 (en) | 2009-08-13 |
US8121495B2 (en) | 2012-02-21 |
JP5088334B2 (ja) | 2012-12-05 |
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