JP2009177132A - 発光ダイオードパッケージ及びその製造方法 - Google Patents
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Abstract
【解決手段】予め作製された金型に熱可塑性高分子物質を入れて成形し、複数のキャビティが一面に並んで形成されるパッケージ本体を作製する段階と、前記パッケージ本体を貫通する電極を形成する段階と、前記パッケージ本体に形成された前記キャビティの各底面に発光ダイオードチップを実装する段階と、ボンディング手段を用いて前記発光ダイオードチップと前記電極との間を電気的に接続する段階と、前記発光ダイオードチップと前記ボンディング手段をモールディング樹脂を用いて密封する段階と、を含む発光ダイオードパッケージの製造方法。
【選択図】 図7
Description
120 電極
130 キャビティ
140 発光ダイオードチップ
150 ボンディング手段
160 モールディング部
170 蛍光層
Claims (23)
- 熱可塑性高分子物質を予め作製された金型に入れて成形させ、複数のキャビティが一面に並んで形成されているパッケージ本体を作製する段階と、
前記パッケージ本体を貫通する電極を形成する段階と、
前記パッケージ本体に形成された前記キャビティの各底面に発光ダイオードチップを実装する段階と、
ボンディング手段を用いて前記発光ダイオードチップと前記電極との間を電気的に接続する段階と、
前記発光ダイオードチップと前記ボンディング手段とをモールディング樹脂を用いて密封する段階と、
を含むことを特徴とする発光ダイオードパッケージの製造方法。 - 前記パッケージ本体は、前記熱可塑性高分子物質を粉末状態で前記金型に入れて圧縮成形する方法により作製されることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記パッケージ本体は、前記熱可塑性高分子物質を溶融状態で前記金型に注入して射出成形する方法により作製されることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記パッケージ本体の前記キャビティの側壁は、傾斜面を有するように形成されることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記電極を形成する段階の前に、
前記パッケージ本体の前記電極を形成しようとする位置に、ドリリング工程によって貫通ホールを形成する段階をさらに含むことを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。 - 前記パッケージ本体には前記電極を形成しようとする位置に対応して貫通ホールが形成され、
前記貫通ホールは、前記パッケージ本体を作製する過程で前記パッケージ本体と共に成形されることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。 - 前記熱可塑性高分子物質は、液晶高分子、ポリエーテルイミド、ポリエーテルスルホン、ポリエーテルエーテルケトン、及びポリテトラフルオロエチレンの中の何れか一つであることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記パッケージ本体は、セラミックフィラーが添加された熱可塑性高分子物質からなることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記モールディング樹脂の上面に蛍光剤を塗布する段階をさらに含むことを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記パッケージ本体がバータイプで作製され、前記複数のキャビティが前記パッケージ本体の一面に一列に形成されることを特徴とする請求項1に記載の発光ダイオードパッケージの製造方法。
- 熱可塑性高分子物質を予め作製された金型に入れて成形させ、複数の貫通部が並んで形成されているパッケージ本体を作製する段階と、
前記貫通部が形成された位置とは異なる位置に前記パッケージ本体を貫通する電極を形成する段階と、
前記貫通部毎に一方向に閉鎖面が形成されるように、前記パッケージ本体の一面に接着テープを貼り付ける段階と、
前記貫通部毎に形成された前記閉鎖面に発光ダイオードチップを実装する段階と、
ボンディング手段を利用して前記発光ダイオードチップと前記電極との間を電気的に接続する段階と、
前記発光ダイオードチップ及び前記ボンディング手段をモールディング樹脂を用いて密封する段階と、
を含む発光ダイオードパッケージの製造方法。 - 前記パッケージ本体は、前記熱可塑性高分子物質を粉末状態で前記金型に入れて圧縮成形する方法により作製されることを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。
- 前記パッケージ本体は、前記熱可塑性高分子物質を溶融状態で前記金型に注入して射出成形する方法により作製されることを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。
- 前記電極は、前記パッケージ本体を貫通する貫通ホールに導電性物質を挿入することにより形成され、前記電極を形成する段階の前に、
前記パッケージ本体の前記電極を形成しようとする位置に、ドリリング工程によって前記貫通ホールを形成する段階をさらに含むことを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。 - 前記パッケージ本体には前記電極を形成しようとする位置に対応して貫通ホールが形成され、
前記貫通ホールは、前記パッケージ本体を作製する過程中に、パッケージ本体と共に成形されることを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。 - 前記熱可塑性高分子物質は、液晶高分子、ポリエーテルイミド、ポリエーテルスルホン、ポリエーテルエーテルケトン、及びポリテトラフルオロエチレンの中の何れか一つであることを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。
- 前記パッケージ本体は、セラミックフィラーが添加された熱可塑性高分子物質からなることを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。
- 前記発光ダイオードと前記ボンディング手段とを密封する段階の後に、
前記接着テープを除去する段階と、
前記接着テープが除去された面に蛍光剤を塗布する段階と、
をさらに含むことを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。 - 前記パッケージ本体がバータイプで作製され、前記複数の貫通部が前記パッケージ本体に一列に形成されることを特徴とする請求項11に記載の発光ダイオードパッケージの製造方法。
- 熱可塑性高分子物質からなり、複数のキャビティが一面に並んで形成されているバータイプのパッケージ本体と、
前記パッケージ本体を貫通して外部電源と接続する電極と、
前記パッケージ本体に形成された前記キャビティの各底面にそれぞれ実装され、ボンディング手段により前記電極と電気的に接続される発光ダイオードチップと、
前記発光ダイオードチップ及び前記ボンディング手段を密封するモールディング部と、
を含む発光ダイオードパッケージ。 - 前記熱可塑性高分子物質は、液晶高分子、ポリエーテルイミド、ポリエーテルスルホン、ポリエーテルエーテルケトン、及びポリテトラフルオロエチレンの中の何れか一つであることを特徴とする請求項20に記載の発光ダイオードパッケージ。
- 前記パッケージ本体は、セラミックフィラーが添加された熱可塑性高分子物質からなることを特徴とする請求項20に記載の発光ダイオードパッケージ。
- 前記発光ダイオードパッケージの発光面上に形成される蛍光層をさらに含み、前記発光面は前記モールディング部の上面または前記キャビティの底面であることを特徴とする請求項20に記載の発光ダイオードパッケージ。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014036225A (ja) * | 2012-08-08 | 2014-02-24 | Samsung Display Co Ltd | バックライトアセンブリー及びこれを有する表示装置 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080290359A1 (en) * | 2007-04-23 | 2008-11-27 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device and manufacturing method of the same |
DE102009036622A1 (de) * | 2009-08-07 | 2011-02-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
CN102074640A (zh) * | 2009-11-25 | 2011-05-25 | 台湾应解股份有限公司 | 发光二极管模块及其制造方法 |
TW201210078A (en) * | 2010-08-25 | 2012-03-01 | Foxsemicon Integrated Tech Inc | Light emitting diode |
CN102456802A (zh) * | 2010-10-19 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
WO2012112310A1 (en) * | 2011-02-18 | 2012-08-23 | 3M Innovative Properties Company | Flexible light emitting semiconductor device having thin dielectric substrate |
CN102694081B (zh) * | 2011-03-21 | 2014-11-05 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
US20130170174A1 (en) | 2011-12-29 | 2013-07-04 | Intematix Technology Center Corp. | Multi-cavities light emitting device |
EP2613354B1 (en) * | 2012-01-03 | 2020-05-06 | Epistar Corporation | Multi-cavaties light emitting device |
US8842951B2 (en) | 2012-03-02 | 2014-09-23 | Analog Devices, Inc. | Systems and methods for passive alignment of opto-electronic components |
US9716193B2 (en) | 2012-05-02 | 2017-07-25 | Analog Devices, Inc. | Integrated optical sensor module |
CN102983125B (zh) * | 2012-11-27 | 2015-07-01 | 北京半导体照明科技促进中心 | Led封装、其制作方法及包含其的led系统 |
WO2014099187A1 (en) * | 2012-12-20 | 2014-06-26 | Dow Global Technologies Llc | Polymer composite components for wireless-communication towers |
DE102013102482A1 (de) * | 2013-03-12 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US10884551B2 (en) | 2013-05-16 | 2021-01-05 | Analog Devices, Inc. | Integrated gesture sensor module |
US9379298B2 (en) * | 2014-10-03 | 2016-06-28 | Henkel IP & Holding GmbH | Laminate sub-mounts for LED surface mount package |
CN105591006A (zh) * | 2014-10-20 | 2016-05-18 | 展晶科技(深圳)有限公司 | 覆晶式led封装体 |
US9590129B2 (en) | 2014-11-19 | 2017-03-07 | Analog Devices Global | Optical sensor module |
KR102378761B1 (ko) * | 2015-07-21 | 2022-03-25 | 엘지이노텍 주식회사 | 일체형 발광 패키지 및 이를 이용한 차량용 램프 |
CN107994109A (zh) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | 一种cob显示模组及其制造方法 |
US10164159B2 (en) * | 2016-12-20 | 2018-12-25 | Samsung Electronics Co., Ltd. | Light-emitting diode package and method of manufacturing the same |
DE102017114668A1 (de) * | 2017-06-30 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Anordnung mit einem optoelektronischen Halbleiterbauteil |
JP6743801B2 (ja) * | 2017-10-27 | 2020-08-19 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10712197B2 (en) | 2018-01-11 | 2020-07-14 | Analog Devices Global Unlimited Company | Optical sensor package |
WO2019213661A1 (en) | 2018-05-04 | 2019-11-07 | Red E Innovations, Llc | System for monitoring an injection mold or stamping die |
US12002898B2 (en) | 2020-06-22 | 2024-06-04 | Stmicroelectronics Pte Ltd | Embedded wafer level optical sensor packaging |
CN111900243A (zh) * | 2020-06-29 | 2020-11-06 | 南京中电熊猫液晶显示科技有限公司 | 显示背板及其封装方法、封装材料的填充方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350206A (ja) * | 1993-06-04 | 1994-12-22 | Osaka Shinku Kagaku Kk | 立体回路基板及びその製造方法 |
JP2000077822A (ja) * | 1998-06-17 | 2000-03-14 | Katsurayama Technol:Kk | 凹みプリント配線板およびその製造方法、ならびに電子部品 |
JP2007220843A (ja) * | 2006-02-16 | 2007-08-30 | Shinko Electric Ind Co Ltd | 光半導体素子用パッケージ |
JP2007311736A (ja) * | 2006-04-21 | 2007-11-29 | Nichia Chem Ind Ltd | 発光装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001144331A (ja) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | 発光装置 |
US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
JP2005294736A (ja) | 2004-04-05 | 2005-10-20 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
US7708427B2 (en) * | 2006-06-16 | 2010-05-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light source device and method of making the device |
US7736020B2 (en) * | 2006-06-16 | 2010-06-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Illumination device and method of making the device |
JP4393500B2 (ja) | 2006-10-10 | 2010-01-06 | 日亜化学工業株式会社 | セラミックスledパッケージ及びセラミックスled |
-
2008
- 2008-01-24 KR KR1020080007332A patent/KR100956888B1/ko not_active IP Right Cessation
- 2008-09-30 US US12/285,228 patent/US8043876B2/en not_active Expired - Fee Related
- 2008-10-07 JP JP2008260957A patent/JP5053223B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350206A (ja) * | 1993-06-04 | 1994-12-22 | Osaka Shinku Kagaku Kk | 立体回路基板及びその製造方法 |
JP2000077822A (ja) * | 1998-06-17 | 2000-03-14 | Katsurayama Technol:Kk | 凹みプリント配線板およびその製造方法、ならびに電子部品 |
JP2007220843A (ja) * | 2006-02-16 | 2007-08-30 | Shinko Electric Ind Co Ltd | 光半導体素子用パッケージ |
JP2007311736A (ja) * | 2006-04-21 | 2007-11-29 | Nichia Chem Ind Ltd | 発光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014036225A (ja) * | 2012-08-08 | 2014-02-24 | Samsung Display Co Ltd | バックライトアセンブリー及びこれを有する表示装置 |
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US20090189177A1 (en) | 2009-07-30 |
US8043876B2 (en) | 2011-10-25 |
JP5053223B2 (ja) | 2012-10-17 |
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