JP2009177027A5 - - Google Patents
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- Publication number
- JP2009177027A5 JP2009177027A5 JP2008015449A JP2008015449A JP2009177027A5 JP 2009177027 A5 JP2009177027 A5 JP 2009177027A5 JP 2008015449 A JP2008015449 A JP 2008015449A JP 2008015449 A JP2008015449 A JP 2008015449A JP 2009177027 A5 JP2009177027 A5 JP 2009177027A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008015449A JP5277646B2 (ja) | 2008-01-25 | 2008-01-25 | 化合物半導体基板の製造方法 |
| US12/811,940 US8003421B2 (en) | 2008-01-25 | 2009-01-14 | Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device |
| PCT/JP2009/000101 WO2009093418A1 (ja) | 2008-01-25 | 2009-01-14 | 化合物半導体基板の製造方法および化合物半導体基板並びに発光素子 |
| TW098101943A TWI398021B (zh) | 2008-01-25 | 2009-01-19 | A method for producing a compound semiconductor substrate, a compound semiconductor substrate, and a light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008015449A JP5277646B2 (ja) | 2008-01-25 | 2008-01-25 | 化合物半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009177027A JP2009177027A (ja) | 2009-08-06 |
| JP2009177027A5 true JP2009177027A5 (ja) | 2010-08-12 |
| JP5277646B2 JP5277646B2 (ja) | 2013-08-28 |
Family
ID=40900930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008015449A Active JP5277646B2 (ja) | 2008-01-25 | 2008-01-25 | 化合物半導体基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8003421B2 (ja) |
| JP (1) | JP5277646B2 (ja) |
| TW (1) | TWI398021B (ja) |
| WO (1) | WO2009093418A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012120798A1 (ja) * | 2011-03-09 | 2012-09-13 | 信越半導体株式会社 | 化合物半導体基板及び化合物半導体基板の製造方法並びに発光素子 |
| WO2019224966A1 (ja) * | 2018-05-24 | 2019-11-28 | 三菱電機株式会社 | Ｉｉｉ―ｖ族化合物半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3507716B2 (ja) | 1998-12-25 | 2004-03-15 | シャープ株式会社 | 半導体発光素子の製造方法 |
| JP3543295B2 (ja) | 1999-03-17 | 2004-07-14 | シャープ株式会社 | 化合物半導体の結晶成長方法および半導体発光素子 |
| EP1065734B1 (en) * | 1999-06-09 | 2009-05-13 | Kabushiki Kaisha Toshiba | Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof. |
| US6388274B1 (en) * | 1999-06-18 | 2002-05-14 | Showa Denko Kabushiki Kaisha | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same |
| JP4091261B2 (ja) | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP2003023177A (ja) * | 2001-07-06 | 2003-01-24 | Sharp Corp | 半導体発光素子の製造方法 |
| JP2004260109A (ja) * | 2003-02-27 | 2004-09-16 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法、複合透光性基板及び発光素子 |
| JP2004296707A (ja) * | 2003-03-26 | 2004-10-21 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法、複合透光性基板及び発光素子 |
| JP4569859B2 (ja) * | 2003-11-19 | 2010-10-27 | 信越半導体株式会社 | 発光素子の製造方法 |
| JP2005277218A (ja) * | 2004-03-25 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
| JP2006135215A (ja) * | 2004-11-09 | 2006-05-25 | Hitachi Cable Ltd | 半導体発光素子の製造方法 |
| JP4974043B2 (ja) * | 2006-01-31 | 2012-07-11 | 信越半導体株式会社 | 発光素子およびその製造方法 |
| JP5019756B2 (ja) * | 2006-02-09 | 2012-09-05 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
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2008
- 2008-01-25 JP JP2008015449A patent/JP5277646B2/ja active Active
-
2009
- 2009-01-14 US US12/811,940 patent/US8003421B2/en not_active Expired - Fee Related
- 2009-01-14 WO PCT/JP2009/000101 patent/WO2009093418A1/ja active Application Filing
- 2009-01-19 TW TW098101943A patent/TWI398021B/zh active