JP2009176966A5 - - Google Patents
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- Publication number
- JP2009176966A5 JP2009176966A5 JP2008014244A JP2008014244A JP2009176966A5 JP 2009176966 A5 JP2009176966 A5 JP 2009176966A5 JP 2008014244 A JP2008014244 A JP 2008014244A JP 2008014244 A JP2008014244 A JP 2008014244A JP 2009176966 A5 JP2009176966 A5 JP 2009176966A5
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- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- electrode
- layer
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 137
- 239000004065 semiconductor Substances 0.000 claims description 121
- 239000000919 ceramic Substances 0.000 claims description 49
- 150000004767 nitrides Chemical class 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008014244A JP5167831B2 (ja) | 2008-01-24 | 2008-01-24 | Ｉｉｉ族窒化物半導体素子、およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008014244A JP5167831B2 (ja) | 2008-01-24 | 2008-01-24 | Ｉｉｉ族窒化物半導体素子、およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009176966A JP2009176966A (ja) | 2009-08-06 |
| JP2009176966A5 true JP2009176966A5 (enrdf_load_stackoverflow) | 2010-06-24 |
| JP5167831B2 JP5167831B2 (ja) | 2013-03-21 |
Family
ID=41031749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008014244A Active JP5167831B2 (ja) | 2008-01-24 | 2008-01-24 | Ｉｉｉ族窒化物半導体素子、およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5167831B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011086899A (ja) * | 2009-09-15 | 2011-04-28 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物半導体発光素子 |
| US8471288B2 (en) | 2009-09-15 | 2013-06-25 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer |
| JP5356292B2 (ja) | 2010-03-19 | 2013-12-04 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |
| JP4778107B1 (ja) | 2010-10-19 | 2011-09-21 | 有限会社ナプラ | 発光デバイス、及び、その製造方法 |
| JP2014220533A (ja) * | 2014-08-26 | 2014-11-20 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124408A (ja) * | 2001-10-11 | 2003-04-25 | Tokuyama Corp | 放熱性基板 |
| DE10355600B4 (de) * | 2003-11-28 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
| JP2006303034A (ja) * | 2005-04-18 | 2006-11-02 | Sanyo Electric Co Ltd | 窒化物系半導体素子の作製方法 |
| JP2007207981A (ja) * | 2006-02-01 | 2007-08-16 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
| JP5186800B2 (ja) * | 2007-04-28 | 2013-04-24 | 日亜化学工業株式会社 | 窒化物半導体発光素子、これを備える発光装置及び窒化物半導体発光素子の製造方法 |
-
2008
- 2008-01-24 JP JP2008014244A patent/JP5167831B2/ja active Active
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