JP2009175436A5 - - Google Patents
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- Publication number
- JP2009175436A5 JP2009175436A5 JP2008013962A JP2008013962A JP2009175436A5 JP 2009175436 A5 JP2009175436 A5 JP 2009175436A5 JP 2008013962 A JP2008013962 A JP 2008013962A JP 2008013962 A JP2008013962 A JP 2008013962A JP 2009175436 A5 JP2009175436 A5 JP 2009175436A5
- Authority
- JP
- Japan
- Prior art keywords
- underlayer film
- resist underlayer
- condition
- resist
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 3
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 2
- 238000003380 quartz crystal microbalance Methods 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 125000004432 carbon atoms Chemical group C* 0.000 claims 1
- 239000003431 cross linking reagent Substances 0.000 claims 1
- 238000011156 evaluation Methods 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol Chemical class OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008013962A JP5141882B2 (ja) | 2008-01-24 | 2008-01-24 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008013962A JP5141882B2 (ja) | 2008-01-24 | 2008-01-24 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009175436A JP2009175436A (ja) | 2009-08-06 |
| JP2009175436A5 true JP2009175436A5 (US20080242721A1-20081002-C00053.png) | 2010-12-16 |
| JP5141882B2 JP5141882B2 (ja) | 2013-02-13 |
Family
ID=41030592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008013962A Expired - Fee Related JP5141882B2 (ja) | 2008-01-24 | 2008-01-24 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5141882B2 (US20080242721A1-20081002-C00053.png) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101804392B1 (ko) | 2011-03-15 | 2017-12-04 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성 방법 |
| JP6083537B2 (ja) * | 2012-03-23 | 2017-02-22 | 日産化学工業株式会社 | Ｅｕｖリソグラフィー用レジスト下層膜形成組成物 |
| JP6132105B2 (ja) * | 2012-05-07 | 2017-05-24 | 日産化学工業株式会社 | レジスト下層膜形成組成物 |
| JP6256719B2 (ja) | 2013-02-25 | 2018-01-10 | 日産化学工業株式会社 | 水酸基を有するアリールスルホン酸塩含有レジスト下層膜形成組成物 |
| CN110698331B (zh) | 2013-06-26 | 2022-07-19 | 日产化学工业株式会社 | 包含被置换的交联性化合物的抗蚀剂下层膜形成用组合物 |
| JP6410053B2 (ja) * | 2013-08-08 | 2018-10-24 | 日産化学株式会社 | 窒素含有環化合物を含むポリマーを含むレジスト下層膜形成組成物 |
| JP6335807B2 (ja) * | 2015-01-27 | 2018-05-30 | 四国化成工業株式会社 | 新規なグリコールウリル類とその利用 |
| US9908990B2 (en) | 2015-04-17 | 2018-03-06 | Samsung Sdi Co., Ltd. | Organic layer composition, organic layer, and method of forming patterns |
| CN116235112A (zh) | 2020-09-28 | 2023-06-06 | 日产化学株式会社 | 包含具有氟烷基的有机酸或其盐的抗蚀剂下层膜形成用组合物 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0980755A (ja) * | 1995-09-12 | 1997-03-28 | Sony Corp | レジストプロセス及び多層レジスト膜 |
| JP3506357B2 (ja) * | 1996-12-13 | 2004-03-15 | 東京応化工業株式会社 | リソグラフィー用下地材 |
| EP1172695A1 (en) * | 2000-07-14 | 2002-01-16 | Shipley Company LLC | Barrier layer |
| AU2003271123A1 (en) * | 2002-10-09 | 2004-05-04 | Nissan Chemical Industries, Ltd. | Composition for forming antireflection film for lithography |
| JP2005142339A (ja) * | 2003-11-06 | 2005-06-02 | Semiconductor Leading Edge Technologies Inc | パターン形成方法 |
| JP2005268321A (ja) * | 2004-03-16 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| EP1705519B1 (en) * | 2005-03-20 | 2016-07-06 | Rohm and Haas Electronic Materials, L.L.C. | Method of treating a microelectronic substrate |
| KR100655064B1 (ko) * | 2005-05-27 | 2006-12-06 | 제일모직주식회사 | 반사방지성을 갖는 하드마스크 조성물 |
| KR101276028B1 (ko) * | 2006-03-27 | 2013-06-19 | 닛산 가가쿠 고교 가부시키 가이샤 | Ｑｃｍ 센서를 이용한 열경화막중의 승화물의 측정 방법 |
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2008
- 2008-01-24 JP JP2008013962A patent/JP5141882B2/ja not_active Expired - Fee Related
