JP2009152194A - 導電性機械的ストッパを有するmemsスイッチ - Google Patents
導電性機械的ストッパを有するmemsスイッチ Download PDFInfo
- Publication number
- JP2009152194A JP2009152194A JP2008316853A JP2008316853A JP2009152194A JP 2009152194 A JP2009152194 A JP 2009152194A JP 2008316853 A JP2008316853 A JP 2008316853A JP 2008316853 A JP2008316853 A JP 2008316853A JP 2009152194 A JP2009152194 A JP 2009152194A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- movable actuator
- conductive
- contact
- mems switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 239000004020 conductor Substances 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000003353 gold alloy Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
【効果】導電性ストッパは可動アクチュエータが基板電極と接触することを防止する。
【選択図】図3
Description
12 基板
14 絶縁層
15 基板接点
16 基板電極
17 可動接点
18 ソース電極
20 誘電体層
23 可動アクチュエータ
30 導電性機械的ストッパを有するMEMSスイッチ
31 導電性トレース
32 基板
33 可動アクチュエータ
34 電気絶縁層
35 基板接点
36 基板電極
37 可動端
38 アンカ/ソース
39 導電性ストッパ
50 複数の導電性機械的ストッパを含む開状態のMEMSスイッチ
51 導電性トレース
56 基板電極
59 導電性ストッパ
60 導電性ストッパを有する可動アクチュエータを有するMEMSスイッチ
61 導電性トレース
63 可動アクチュエータ
69 可動導電性ストッパ
70 分割された導電性ストッパを有するMEMSスイッチ
71 導電性トレース
79a 導電性ストッパの可動部
79b 導電性ストッパの固定部
80 分割された導電性ストッパと導電性接点バンプとを有するMEMSスイッチ
83 可動アクチュエータ
85 基板接点
86 基板電極
89 接点バンプ
90 MEMSスイッチアレイ
91 導電性トレース
93 可動アクチュエータ
95 基板接点
96 基板電極
98 アンカ
99 導電性ストッパ
100 接点
102 基板
109 接点バンプ
Claims (10)
- MEMSスイッチ(30、50、60、70、80)であって、
基板(32)と、
前記基板(32)に結合された可動アクチュエータ(33、63、83)と、
基板接点(35、85)と、
基板電極(36、56、86)と、
前記可動アクチュエータ(33、63、83)に電気的に結合され、かつ前記可動アクチュエータ(33、63、83)が前記基板接点(35、85)と接触することを可能にしつつ、前記可動アクチュエータ(33、63、83)が前記基板電極(36、56、86)と接触することを防止するように構成された導電性ストッパ(39、59、69、79)とを備えるMEMSスイッチ。 - 前記可動アクチュエータ(33、63、83)及び前記基板電極(36、56、86)が前記基板(32)から電気的に絶縁される請求項1記載のMEMSスイッチ。
- 前記可動アクチュエータ(33、63、83)が導電性ビームを備える請求項1記載のMEMSスイッチ。
- 前記導電性ストッパ(39、59)が前記導電性ビームよりも高い抵抗率を有する請求項3記載のMEMSスイッチ。
- 前記導電性ストッパ(39)が前記基板(32)上に位置し、前記基板電極(36)が前記導電性ストッパ(39)と前記基板接点(35)との間に位置する請求項1記載のMEMSスイッチ。
- 前記導電性ストッパ(39、59)が、前記可動アクチュエータ(33)が前記基板接点(35)に接触する前に前記導電性ストッパ(39、59)に接触するように構成される請求項5記載のMEMSスイッチ。
- 前記可動アクチュエータ(33、63、83)に電気的に結合され、少なくとも部分的に前記可動アクチュエータ(33、63、83)の下で前記基板(32)上に位置する導電性トレース(31、61、71)をさらに備える請求項1記載のMEMSスイッチ。
- 前記基板(32)と前記基板電極(36、56、86)との間の絶縁層(34)をさらに備え、前記導電性トレース(31、61、71)が前記基板(32)と前記絶縁層(34)との間に位置する請求項7記載のMEMSスイッチ。
- 前記導電性ストッパ(69)は、前記可動アクチュエータ(63)が作動されると前記導電性ストッパ(69)が前記導電性トレース(61)に接触するように前記可動アクチュエータ(63)と一体化される請求項7記載のMEMSスイッチ。
- 共用基板(102)上に形成されたMEMSスイッチアレイ(90)であって、
前記基板(102)に結合された第1の可動アクチュエータ(93)と、
前記基板(102)に結合された第2の可動アクチュエータ(93)と、
少なくとも部分的に前記第1及び第2の可動アクチュエータ(93)の下で前記基板(102)上に位置する基板電極(96)と、
前記第1及び第2の可動アクチュエータ(93)が前記基板電極(96)の状態に基づいて前記基板接点(95)と電気的に接触するように、少なくとも部分的に前記第1及び第2の可動アクチュエータ(93)の下で前記基板(102)上に位置する基板接点(95)と、
前記可動アクチュエータ(93)に電気的に結合され、かつ前記可動アクチュエータ(93)が前記基板接点(95)と接触することを可能にしつつ、前記可動アクチュエータ(93)が前記基板電極(96)と接触することを防止するように構成された少なくとも1つの導電性ストッパ(99)とを備えるMEMSスイッチ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/961,767 | 2007-12-20 | ||
US11/961,767 US7609136B2 (en) | 2007-12-20 | 2007-12-20 | MEMS microswitch having a conductive mechanical stop |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009152194A true JP2009152194A (ja) | 2009-07-09 |
JP5449756B2 JP5449756B2 (ja) | 2014-03-19 |
Family
ID=40499615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008316853A Active JP5449756B2 (ja) | 2007-12-20 | 2008-12-12 | 導電性機械的ストッパを有するmemsスイッチ |
Country Status (7)
Country | Link |
---|---|
US (1) | US7609136B2 (ja) |
EP (1) | EP2073236B1 (ja) |
JP (1) | JP5449756B2 (ja) |
KR (1) | KR101538169B1 (ja) |
CN (1) | CN101533740B (ja) |
CA (1) | CA2645834A1 (ja) |
DE (1) | DE602008005244D1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004112A (ja) * | 2010-06-17 | 2012-01-05 | General Electric Co <Ge> | スイッチング電流を導通するよう構成された基材を有するmemsスイッチングアレイ |
WO2012011703A2 (ko) * | 2010-07-19 | 2012-01-26 | 주식회사 코미코 | 멤스 스위치 및 이의 제조 방법 |
JP2012196727A (ja) * | 2011-03-18 | 2012-10-18 | Fujitsu Ltd | Mems素子 |
WO2013011864A1 (ja) | 2011-07-15 | 2013-01-24 | 株式会社村田製作所 | 薄膜デバイスおよび薄膜デバイスの製造方法 |
JP2017073228A (ja) * | 2015-10-05 | 2017-04-13 | アルプス電気株式会社 | 磁気リードスイッチ |
JP2017073227A (ja) * | 2015-10-05 | 2017-04-13 | アルプス電気株式会社 | 磁気リードスイッチ |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7754986B1 (en) * | 2007-02-27 | 2010-07-13 | National Semiconductor Corporation | Mechanical switch that reduces the effect of contact resistance |
KR101303579B1 (ko) * | 2007-07-19 | 2013-09-09 | 삼성전자주식회사 | 전기기계적 스위치 및 그 제조방법 |
JP4492677B2 (ja) * | 2007-11-09 | 2010-06-30 | セイコーエプソン株式会社 | アクティブマトリクス装置、電気光学表示装置、および電子機器 |
US8354899B2 (en) * | 2009-09-23 | 2013-01-15 | General Electric Company | Switch structure and method |
US8779886B2 (en) * | 2009-11-30 | 2014-07-15 | General Electric Company | Switch structures |
FR2963784B1 (fr) * | 2010-08-11 | 2012-08-31 | Univ Limoges | Microsystemes electromecaniques a gaps d'air. |
US8797127B2 (en) * | 2010-11-22 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS switch with reduced dielectric charging effect |
US9120667B2 (en) * | 2011-06-20 | 2015-09-01 | International Business Machines Corporation | Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures |
KR101273700B1 (ko) | 2011-09-15 | 2013-06-12 | 삼성전기주식회사 | Mems 소자 |
US9829550B2 (en) | 2012-12-27 | 2017-11-28 | General Electric Company | Multi-nuclear receiving coils for magnetic resonance imaging (MRI) |
US20140264655A1 (en) * | 2013-03-13 | 2014-09-18 | Invensense, Inc. | Surface roughening to reduce adhesion in an integrated mems device |
JP2016519831A (ja) | 2013-03-14 | 2016-07-07 | インテル・コーポレーション | ナノワイヤベースのメカニカルスイッチングデバイス |
US9136165B2 (en) * | 2013-06-04 | 2015-09-15 | Invensense, Inc. | Methods for stiction reduction in MEMS sensors |
US9475093B2 (en) * | 2013-10-03 | 2016-10-25 | Fujifilm Dimatix, Inc. | Piezoelectric ultrasonic transducer array with switched operational modes |
US9525119B2 (en) | 2013-12-11 | 2016-12-20 | Fujifilm Dimatix, Inc. | Flexible micromachined transducer device and method for fabricating same |
US9748048B2 (en) * | 2014-04-25 | 2017-08-29 | Analog Devices Global | MEMS switch |
EP3201123A4 (en) * | 2014-10-03 | 2018-05-23 | Wispry, Inc. | Systems, devices, and methods to reduce dielectric charging in micro-electromechanical systems devices |
US9708176B2 (en) * | 2015-05-28 | 2017-07-18 | Invensense, Inc. | MEMS sensor with high voltage switch |
US11114265B2 (en) * | 2015-11-16 | 2021-09-07 | Cavendish Kinetics, Inc. | Thermal management in high power RF MEMS switches |
CN105702527B (zh) * | 2016-05-03 | 2018-09-21 | 北京邮电大学 | 一种微机电系统开关 |
CN108698813B (zh) * | 2016-06-02 | 2023-01-20 | 歌尔股份有限公司 | Mems器件及电子设备 |
WO2018063814A1 (en) | 2016-09-29 | 2018-04-05 | Cavendish Kinetics, Inc | Mems rf-switch with near-zero impact landing |
US10416524B1 (en) * | 2017-04-25 | 2019-09-17 | University Of South Florida | Chromatic devices comprising a salt-based electrolyte |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002326197A (ja) * | 2001-02-27 | 2002-11-12 | Samsung Electronics Co Ltd | 非線形的復原力のバネを有するmems素子 |
US6646215B1 (en) * | 2001-06-29 | 2003-11-11 | Teravicin Technologies, Inc. | Device adapted to pull a cantilever away from a contact structure |
US6967548B2 (en) * | 2002-07-11 | 2005-11-22 | Intel Corporation | Microelectromechanical (MEMS) switching apparatus |
JP2007535797A (ja) * | 2004-05-07 | 2007-12-06 | インテル・コーポレーション | マイクロマシン技術(mems)スイッチ用のビーム |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
US6307169B1 (en) * | 2000-02-01 | 2001-10-23 | Motorola Inc. | Micro-electromechanical switch |
US6657832B2 (en) * | 2001-04-26 | 2003-12-02 | Texas Instruments Incorporated | Mechanically assisted restoring force support for micromachined membranes |
WO2003028059A1 (en) * | 2001-09-21 | 2003-04-03 | Hrl Laboratories, Llc | Mems switches and methods of making same |
DE60230341D1 (de) * | 2001-11-09 | 2009-01-22 | Wispry Inc | MEMS-Einrichtung mit dreischichtigem Strahl und diesbezügliche Verfahren |
US6608268B1 (en) * | 2002-02-05 | 2003-08-19 | Memtronics, A Division Of Cogent Solutions, Inc. | Proximity micro-electro-mechanical system |
US6876282B2 (en) * | 2002-05-17 | 2005-04-05 | International Business Machines Corporation | Micro-electro-mechanical RF switch |
US6657525B1 (en) * | 2002-05-31 | 2003-12-02 | Northrop Grumman Corporation | Microelectromechanical RF switch |
US6998946B2 (en) * | 2002-09-17 | 2006-02-14 | The Board Of Trustees Of The University Of Illinois | High cycle deflection beam MEMS devices |
CN1252771C (zh) * | 2003-09-29 | 2006-04-19 | 中国科学院上海微系统与信息技术研究所 | 一种微型扭转式单刀双置射频开关结构及制作方法 |
US7283024B2 (en) * | 2003-12-18 | 2007-10-16 | Intel Corporation | MEMS switch stopper bumps with adjustable height |
US7101724B2 (en) * | 2004-02-20 | 2006-09-05 | Wireless Mems, Inc. | Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
JP4504237B2 (ja) * | 2005-03-18 | 2010-07-14 | 富士通株式会社 | ウエットエッチング方法、マイクロ可動素子製造方法、およびマイクロ可動素子 |
CN1716492A (zh) * | 2005-06-07 | 2006-01-04 | 北京邮电大学 | 集成方式的rf mems开关 |
US7385744B2 (en) * | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
JP2008238330A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | Mems装置およびこのmems装置を有する携帯通信端末 |
-
2007
- 2007-12-20 US US11/961,767 patent/US7609136B2/en active Active
-
2008
- 2008-12-04 CA CA002645834A patent/CA2645834A1/en not_active Abandoned
- 2008-12-11 DE DE602008005244T patent/DE602008005244D1/de active Active
- 2008-12-11 EP EP08171380A patent/EP2073236B1/en active Active
- 2008-12-12 JP JP2008316853A patent/JP5449756B2/ja active Active
- 2008-12-18 KR KR1020080129356A patent/KR101538169B1/ko active IP Right Grant
- 2008-12-22 CN CN200810188424XA patent/CN101533740B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002326197A (ja) * | 2001-02-27 | 2002-11-12 | Samsung Electronics Co Ltd | 非線形的復原力のバネを有するmems素子 |
US6646215B1 (en) * | 2001-06-29 | 2003-11-11 | Teravicin Technologies, Inc. | Device adapted to pull a cantilever away from a contact structure |
US6967548B2 (en) * | 2002-07-11 | 2005-11-22 | Intel Corporation | Microelectromechanical (MEMS) switching apparatus |
JP2007535797A (ja) * | 2004-05-07 | 2007-12-06 | インテル・コーポレーション | マイクロマシン技術(mems)スイッチ用のビーム |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004112A (ja) * | 2010-06-17 | 2012-01-05 | General Electric Co <Ge> | スイッチング電流を導通するよう構成された基材を有するmemsスイッチングアレイ |
WO2012011703A2 (ko) * | 2010-07-19 | 2012-01-26 | 주식회사 코미코 | 멤스 스위치 및 이의 제조 방법 |
WO2012011703A3 (ko) * | 2010-07-19 | 2012-03-29 | 주식회사 코미코 | 멤스 스위치 및 이의 제조 방법 |
JP2012196727A (ja) * | 2011-03-18 | 2012-10-18 | Fujitsu Ltd | Mems素子 |
WO2013011864A1 (ja) | 2011-07-15 | 2013-01-24 | 株式会社村田製作所 | 薄膜デバイスおよび薄膜デバイスの製造方法 |
US9368247B2 (en) | 2011-07-15 | 2016-06-14 | Murata Manufacturing Co., Ltd. | Thin film device and method for manufacturing thin film device |
JP2017073228A (ja) * | 2015-10-05 | 2017-04-13 | アルプス電気株式会社 | 磁気リードスイッチ |
JP2017073227A (ja) * | 2015-10-05 | 2017-04-13 | アルプス電気株式会社 | 磁気リードスイッチ |
Also Published As
Publication number | Publication date |
---|---|
CA2645834A1 (en) | 2009-06-20 |
CN101533740A (zh) | 2009-09-16 |
KR101538169B1 (ko) | 2015-07-20 |
DE602008005244D1 (de) | 2011-04-14 |
US20090159410A1 (en) | 2009-06-25 |
CN101533740B (zh) | 2013-11-13 |
EP2073236B1 (en) | 2011-03-02 |
JP5449756B2 (ja) | 2014-03-19 |
US7609136B2 (en) | 2009-10-27 |
KR20090067080A (ko) | 2009-06-24 |
EP2073236A1 (en) | 2009-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5449756B2 (ja) | 導電性機械的ストッパを有するmemsスイッチ | |
JP4262199B2 (ja) | 微小電気機械スイッチ | |
KR101745722B1 (ko) | 마이크로 전기기계 시스템 스위치 | |
US7692519B2 (en) | MEMS switch with improved standoff voltage control | |
JP5530624B2 (ja) | デュアルアクチュエータと共用ゲートとを有するmemsマイクロスイッチ | |
US6635837B2 (en) | MEMS micro-relay with coupled electrostatic and electromagnetic actuation | |
US8054147B2 (en) | High voltage switch and method of making | |
KR101766482B1 (ko) | 스위치 구조물 | |
KR20110031150A (ko) | 집적 리드 스위치 | |
TWI501274B (zh) | 微機電系統裝置及其製造方法 | |
JP5724141B2 (ja) | 静電駆動マイクロメカニカルスイッチングデバイス | |
JP2004319502A (ja) | 屈曲型スイッチバーを含む高周波ラッチングリレー | |
JP7283064B2 (ja) | マイクロ構造およびマイクロ構造の制御方法 | |
JP2023064039A (ja) | Memsスイッチ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110214 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131114 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131225 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5449756 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |