JP2009147001A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2009147001A
JP2009147001A JP2007320973A JP2007320973A JP2009147001A JP 2009147001 A JP2009147001 A JP 2009147001A JP 2007320973 A JP2007320973 A JP 2007320973A JP 2007320973 A JP2007320973 A JP 2007320973A JP 2009147001 A JP2009147001 A JP 2009147001A
Authority
JP
Japan
Prior art keywords
esd protection
region
mos transistor
type mos
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007320973A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009147001A5 (https=
Inventor
Hiroaki Takasu
博昭 鷹巣
Sukehiro Yamamoto
祐広 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2007320973A priority Critical patent/JP2009147001A/ja
Priority to US12/315,635 priority patent/US7898035B2/en
Priority to KR20080126300A priority patent/KR101489003B1/ko
Priority to CN200810187029XA priority patent/CN101459176B/zh
Publication of JP2009147001A publication Critical patent/JP2009147001A/ja
Publication of JP2009147001A5 publication Critical patent/JP2009147001A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2007320973A 2007-12-12 2007-12-12 半導体装置 Withdrawn JP2009147001A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007320973A JP2009147001A (ja) 2007-12-12 2007-12-12 半導体装置
US12/315,635 US7898035B2 (en) 2007-12-12 2008-12-04 Semiconductor device
KR20080126300A KR101489003B1 (ko) 2007-12-12 2008-12-12 반도체 장치
CN200810187029XA CN101459176B (zh) 2007-12-12 2008-12-12 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007320973A JP2009147001A (ja) 2007-12-12 2007-12-12 半導体装置

Publications (2)

Publication Number Publication Date
JP2009147001A true JP2009147001A (ja) 2009-07-02
JP2009147001A5 JP2009147001A5 (https=) 2010-11-25

Family

ID=40752066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007320973A Withdrawn JP2009147001A (ja) 2007-12-12 2007-12-12 半導体装置

Country Status (4)

Country Link
US (1) US7898035B2 (https=)
JP (1) JP2009147001A (https=)
KR (1) KR101489003B1 (https=)
CN (1) CN101459176B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110073947A1 (en) * 2009-09-25 2011-03-31 Hiroaki Takasu Semiconductor device
US20110073948A1 (en) * 2009-09-25 2011-03-31 Hiroaki Takasu Semiconductor device
CN116169128A (zh) * 2023-03-27 2023-05-26 上海泰矽微电子有限公司 一种静电保护装置和芯片

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置
US8378422B2 (en) * 2009-02-06 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge protection device comprising a plurality of highly doped areas within a well
US12396267B2 (en) * 2023-02-02 2025-08-19 Vanguard International Semiconductor Corporation Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343236A (ja) * 1991-05-21 1992-11-30 Nec Ic Microcomput Syst Ltd Ｍｏｓ集積回路装置
JPH06140583A (ja) * 1992-10-23 1994-05-20 Sony Corp 静電破壊保護トランジスタ
JP2003289104A (ja) * 2002-03-28 2003-10-10 Ricoh Co Ltd 半導体装置の保護回路及び半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910675A (en) * 1995-12-14 1999-06-08 Nec Corporation Semiconductor device and method of making the same
JP2005019452A (ja) * 2003-06-23 2005-01-20 Toshiba Corp 半導体装置
US6940131B2 (en) * 2003-06-30 2005-09-06 Texas Instruments Incorporated MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication
JP4593094B2 (ja) * 2003-08-21 2010-12-08 日本電気株式会社 液晶表示装置及びその製造方法
KR20050035687A (ko) * 2003-10-14 2005-04-19 삼성전자주식회사 정전기 방전 보호소자 및 그의 제조하는 방법
US6943069B2 (en) * 2003-10-14 2005-09-13 Semiconductor Components Industries, L.L.C. Power system inhibit method and device and structure therefor
US20050224883A1 (en) * 2004-04-06 2005-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit design for increasing charge device model immunity
US7397089B2 (en) * 2005-08-10 2008-07-08 Skyworks Solutions, Inc. ESD protection structure using contact-via chains as ballast resistors
JP5586819B2 (ja) * 2006-04-06 2014-09-10 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343236A (ja) * 1991-05-21 1992-11-30 Nec Ic Microcomput Syst Ltd Ｍｏｓ集積回路装置
JPH06140583A (ja) * 1992-10-23 1994-05-20 Sony Corp 静電破壊保護トランジスタ
JP2003289104A (ja) * 2002-03-28 2003-10-10 Ricoh Co Ltd 半導体装置の保護回路及び半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110073947A1 (en) * 2009-09-25 2011-03-31 Hiroaki Takasu Semiconductor device
US20110073948A1 (en) * 2009-09-25 2011-03-31 Hiroaki Takasu Semiconductor device
US8207581B2 (en) * 2009-09-25 2012-06-26 Seiko Instruments Inc. Semiconductor device
US8278714B2 (en) * 2009-09-25 2012-10-02 Seiko Instruments Inc. Semiconductor device
TWI508262B (zh) * 2009-09-25 2015-11-11 精工電子有限公司 半導體裝置
CN116169128A (zh) * 2023-03-27 2023-05-26 上海泰矽微电子有限公司 一种静电保护装置和芯片

Also Published As

Publication number Publication date
KR101489003B1 (ko) 2015-02-02
US20090152633A1 (en) 2009-06-18
CN101459176A (zh) 2009-06-17
CN101459176B (zh) 2013-01-23
KR20090063149A (ko) 2009-06-17
US7898035B2 (en) 2011-03-01

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