JP2009135155A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000003860 storage Methods 0.000 claims description 90
- 238000005530 etching Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000015654 memory Effects 0.000 abstract description 61
- 238000009825 accumulation Methods 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】本発明は、半導体基板10上に電荷蓄積層22を形成する工程と、電荷蓄積層上に形成されたマスク層30をマスクにして、電荷蓄積層と半導体基板とに、延伸する第1溝部12を形成する工程と、第1溝部に絶縁膜14を形成する工程と、マスク層と絶縁膜とに、第1溝部に交差して延伸する第2溝部32を形成する工程と、第2溝部下にゲート絶縁膜18を形成する工程と、第2溝部に第1導電層34を形成する工程と、マスク層を除去する工程と、第1導電層の両側面に第2導電層36を形成し、第1導電層と第2導電層とからワードライン16を形成する工程と、ワードラインをマスクに電荷蓄積層を除去する工程と、を有する半導体装置とその製造方法である。
【選択図】図1
Description
12 第1溝部
14 絶縁膜
16 ワードライン
18 ゲート絶縁膜
20 トンネル絶縁膜
22 電荷蓄積層
24 トップ絶縁膜
25 積層膜
26 拡散領域
30 マスク層
32 第2溝部
34 第1導電層
36 第2導電層
38 酸化膜
Claims (10)
- 半導体基板上に電荷蓄積層を形成する工程と、
前記電荷蓄積層上に形成されたマスク層をマスクにして、前記電荷蓄積層と前記半導体基板とに、延伸する第1溝部を形成する工程と、
前記第1溝部に埋め込むように絶縁膜を形成する工程と、
前記マスク層と前記絶縁膜とに、前記第1溝部に交差して延伸する第2溝部を形成する工程と、
前記第2溝部下に形成された前記電荷蓄積層を酸化させてゲート絶縁膜を形成する工程と、
前記第2溝部に埋め込むように第1導電層を形成する工程と、
前記マスク層を除去する工程と、
前記第1導電層幅方向における両側面に第2導電層を形成し、前記第1導電層と前記第2導電層とからなるワードラインを形成する工程と、
前記ワードラインをマスクに前記電荷蓄積層を除去する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第1導電層を形成する工程の後、前記第1導電層と前記マスク層とをマスクに、前記絶縁膜をエッチングする工程を有することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記絶縁膜を形成する工程は、前記絶縁膜の上面と前記マスク層の上面とが同一面になるよう、前記絶縁膜を形成する工程であることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第2溝部を形成する工程は、前記第2溝部の底面が前記半導体基板の上面より上方にあるよう、前記第2溝部を形成する工程であることを特徴とする請求項1から3のいずれか一項記載の半導体装置の製造方法。
- 前記第2溝部を形成する工程は、前記電荷蓄積層が露出するよう、前記第2溝部を形成する工程であることを特徴とする請求項1から4のいずれか一項記載の半導体装置の製造方法。
- 前記ゲート絶縁膜を形成する工程は、前記マスク層の上面と側面とに酸化膜を形成する工程を含み、
前記第1導電層を形成する工程の後、前記第1導電層の側面が露出するよう、前記酸化膜を除去する工程を有することを特徴とする請求項1から5のいずれか一項記載の半導体装置の製造方法。 - 前記ワードラインと前記絶縁膜とをマスクに、前記半導体基板内に拡散領域を形成する工程を有することを特徴とする請求項1から6のいずれか一項記載の半導体装置の製造方法。
- 第1溝部が延伸して設けられた半導体基板と、
前記第1溝部に埋め込まれるように設けられ、前記半導体基板の上面より突出する絶縁膜と、
前記半導体基板上に設けられ、前記第1溝部に交差して延伸するワードラインと、
前記ワードライン幅方向における中央部下の前記半導体基板上に設けられ、前記絶縁膜により前記ワードライン延伸方向で分離されたゲート絶縁膜と、
前記ワードライン幅方向における両端部下の前記半導体基板上に、前記ゲート絶縁膜を挟むように設けられ、前記絶縁膜により前記ワードライン延伸方向で分離された電荷蓄積層と、を具備することを特徴とする半導体装置。 - 前記ワードライン幅方向における中央部であって、前記ゲート絶縁膜上の前記ワードラインの高さと前記絶縁膜上の前記ワードラインの高さとは異なることを特徴とする請求項8記載の半導体装置。
- 前記ワードライン幅方向おける前記ゲート絶縁膜両端部上に、前記ワードラインに突出する酸化膜を具備することを特徴とする請求項8または9記載の半導体装置。
Priority Applications (3)
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JP2007308094A JP5491694B2 (ja) | 2007-11-28 | 2007-11-28 | 半導体装置およびその製造方法 |
PCT/US2008/013227 WO2009070336A1 (en) | 2007-11-28 | 2008-11-26 | Semiconductor device and method for manufacturing thereof |
TW97146131A TWI471936B (zh) | 2007-11-28 | 2008-11-28 | 半導體裝置及其製造方法 |
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JP5491694B2 JP5491694B2 (ja) | 2014-05-14 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677498A (ja) * | 1992-08-28 | 1994-03-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2002026149A (ja) * | 2000-05-02 | 2002-01-25 | Sony Corp | 不揮発性半導体記憶装置およびその動作方法 |
JP2003318290A (ja) * | 2002-04-25 | 2003-11-07 | Nec Electronics Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2005243183A (ja) * | 2004-02-27 | 2005-09-08 | Toshiba Corp | データ記憶システム |
Family Cites Families (4)
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US6670240B2 (en) * | 2001-08-13 | 2003-12-30 | Halo Lsi, Inc. | Twin NAND device structure, array operations and fabrication method |
JP2003258128A (ja) * | 2002-02-27 | 2003-09-12 | Nec Electronics Corp | 不揮発性半導体記憶装置およびその製造方法ならびにその動作方法 |
KR100480645B1 (ko) * | 2003-04-01 | 2005-03-31 | 삼성전자주식회사 | 역자기 정합 방식을 이용한 트윈―ono 형태의sonos 메모리 소자 제조 방법 |
KR100655291B1 (ko) * | 2005-03-14 | 2006-12-08 | 삼성전자주식회사 | 비휘발성 반도체 메모리 장치 및 그 제조방법 |
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- 2008-11-26 WO PCT/US2008/013227 patent/WO2009070336A1/en active Application Filing
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677498A (ja) * | 1992-08-28 | 1994-03-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2002026149A (ja) * | 2000-05-02 | 2002-01-25 | Sony Corp | 不揮発性半導体記憶装置およびその動作方法 |
JP2003318290A (ja) * | 2002-04-25 | 2003-11-07 | Nec Electronics Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2005243183A (ja) * | 2004-02-27 | 2005-09-08 | Toshiba Corp | データ記憶システム |
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TW200937524A (en) | 2009-09-01 |
TWI471936B (zh) | 2015-02-01 |
WO2009070336A1 (en) | 2009-06-04 |
JP5491694B2 (ja) | 2014-05-14 |
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