JP2009131951A5 - - Google Patents

Download PDF

Info

Publication number
JP2009131951A5
JP2009131951A5 JP2008284983A JP2008284983A JP2009131951A5 JP 2009131951 A5 JP2009131951 A5 JP 2009131951A5 JP 2008284983 A JP2008284983 A JP 2008284983A JP 2008284983 A JP2008284983 A JP 2008284983A JP 2009131951 A5 JP2009131951 A5 JP 2009131951A5
Authority
JP
Japan
Prior art keywords
material layer
layer
electrode layer
filling material
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008284983A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009131951A (ja
JP5271671B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008284983A priority Critical patent/JP5271671B2/ja
Priority claimed from JP2008284983A external-priority patent/JP5271671B2/ja
Publication of JP2009131951A publication Critical patent/JP2009131951A/ja
Publication of JP2009131951A5 publication Critical patent/JP2009131951A5/ja
Application granted granted Critical
Publication of JP5271671B2 publication Critical patent/JP5271671B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008284983A 2007-11-07 2008-11-06 微小電気機械式装置 Expired - Fee Related JP5271671B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008284983A JP5271671B2 (ja) 2007-11-07 2008-11-06 微小電気機械式装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007289224 2007-11-07
JP2007289224 2007-11-07
JP2008284983A JP5271671B2 (ja) 2007-11-07 2008-11-06 微小電気機械式装置

Publications (3)

Publication Number Publication Date
JP2009131951A JP2009131951A (ja) 2009-06-18
JP2009131951A5 true JP2009131951A5 (enExample) 2011-11-24
JP5271671B2 JP5271671B2 (ja) 2013-08-21

Family

ID=40588367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008284983A Expired - Fee Related JP5271671B2 (ja) 2007-11-07 2008-11-06 微小電気機械式装置

Country Status (3)

Country Link
US (2) US7872320B2 (enExample)
JP (1) JP5271671B2 (enExample)
KR (1) KR101541906B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010286471A (ja) * 2009-05-15 2010-12-24 Seiko Epson Corp Ｍｅｍｓセンサー、電子機器
JP5396335B2 (ja) 2009-05-28 2014-01-22 株式会社半導体エネルギー研究所 タッチパネル
JP5866089B2 (ja) * 2009-11-20 2016-02-17 株式会社半導体エネルギー研究所 電子機器
TWI507934B (zh) * 2009-11-20 2015-11-11 Semiconductor Energy Lab 顯示裝置
CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
US8367459B2 (en) 2010-12-14 2013-02-05 Sharp Laboratories Of America, Inc. Organic semiconductor interface preparation
US9223618B2 (en) 2011-09-20 2015-12-29 Intel Corporation Multi-threaded queuing system for pattern matching
CN102980694B (zh) * 2012-11-29 2015-07-29 北京大学 无应变膜结构的mems压阻式压力传感器及其制作方法
US20150122531A1 (en) * 2013-11-01 2015-05-07 Carestream Health, Inc. Strain gauge
CN103730511B (zh) * 2013-12-26 2016-03-23 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板、显示装置
CN106044704B (zh) * 2016-06-27 2017-09-29 李岩 微电子机械系统结构形成方法
CN117548321A (zh) * 2022-08-05 2024-02-13 天津大学 具有双承载层的微机械超声换能器结构及其制造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278925A (ja) * 1988-09-16 1990-03-19 Yokohama Syst Kenkyusho:Kk 静電容量型圧力センサ
DE19536250A1 (de) * 1995-09-28 1997-04-03 Siemens Ag Mikroelektronischer, integrierter Sensor und Verfahren zur Herstellung des Sensors
JP2000273236A (ja) 1999-03-25 2000-10-03 Jsr Corp 親水性多孔質膜
US6749733B1 (en) * 2000-04-10 2004-06-15 Intel Corporation Materials classifier, method of using, and method of making
JP2002170470A (ja) * 2000-11-28 2002-06-14 Matsushita Electric Works Ltd 半導体マイクロリレー及びその製造方法
US6465280B1 (en) * 2001-03-07 2002-10-15 Analog Devices, Inc. In-situ cap and method of fabricating same for an integrated circuit device
JP4773630B2 (ja) * 2001-05-15 2011-09-14 株式会社デンソー ダイアフラム型半導体装置とその製造方法
US6780786B2 (en) * 2001-11-26 2004-08-24 The Regents Of The University Of California Method for producing a porous silicon film
US7943412B2 (en) * 2001-12-10 2011-05-17 International Business Machines Corporation Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
TW576864B (en) 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
JP4077312B2 (ja) 2001-12-28 2008-04-16 株式会社東芝 発光素子の製造方法および発光素子
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
JP4076829B2 (ja) 2002-09-20 2008-04-16 株式会社東芝 マイクロスイッチ及びその製造方法
KR100470634B1 (ko) * 2002-10-02 2005-03-10 한국전자통신연구원 축전식 미세전자기계적 스위치 및 그 제조 방법
US6917459B2 (en) * 2003-06-03 2005-07-12 Hewlett-Packard Development Company, L.P. MEMS device and method of forming MEMS device
JP4269806B2 (ja) * 2003-06-30 2009-05-27 カシオ計算機株式会社 半導体装置およびその製造方法
US7560789B2 (en) * 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4519804B2 (ja) 2005-05-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007276089A (ja) * 2006-04-11 2007-10-25 Sony Corp 電気機械素子とその製造方法、並びに共振器とその製造方法
US7687833B2 (en) * 2006-05-31 2010-03-30 Stmicroelectronics S.A. Component containing a baw filter
JP2008132583A (ja) * 2006-10-24 2008-06-12 Seiko Epson Corp Ｍｅｍｓデバイス
JP5127210B2 (ja) * 2006-11-30 2013-01-23 株式会社日立製作所 Ｍｅｍｓセンサが混載された半導体装置
JP4337870B2 (ja) * 2006-12-15 2009-09-30 セイコーエプソン株式会社 Ｍｅｍｓレゾネータ及びｍｅｍｓレゾネータの製造方法
US7687297B2 (en) * 2007-06-29 2010-03-30 Intel Corporation Forming a cantilever assembly for vertical and lateral movement
JP5352975B2 (ja) 2007-08-31 2013-11-27 オムロン株式会社 素子集合体及びその製造方法

Similar Documents

Publication Publication Date Title
JP2009131951A5 (enExample)
JP2013508254A5 (enExample)
JP2012512754A5 (enExample)
TW200744940A (en) Non-planar surface structures and process for microelectromechanical systems
TW200746241A (en) Non-planar surface structures and process for microelectromechanical systems
EP2505548A3 (en) Micromechanical sound transducer having a membrane support with tapered surface
WO2015066404A8 (en) Mitigating leaks in membranes
JP2011521459A5 (enExample)
EP1752415A3 (en) Manufacturing method of a suspended MEMS structure
TW200744939A (en) Non-planar surface structures and process for microelectromechanical systems
WO2008136232A1 (ja) ハニカムフィルタ
JP2012512742A5 (enExample)
JP2011508686A5 (enExample)
EP1848032A3 (en) Materials and methods of forming controlled voids in dielectric layers
JP2011521797A5 (enExample)
JP2009502530A5 (enExample)
WO2008156977A3 (en) Methods of fabricating nanostructures by use of thin films of self-assembling of diblock copolymers, and devices resulting from those methods
EP2248763A3 (en) Capacitive electro-mechanical transducer and fabrication method of the same
JP2010505661A5 (enExample)
JP2012096329A5 (enExample)
JP2016033937A5 (ja) 圧電デバイス
EP2489629A3 (en) Mems device having variable gap width and method of manufacture
JP2014509038A5 (enExample)
WO2010140792A3 (en) Method for manufacturing 3-dimensional structures using thin film with columnar nano pores and manufacture thereof
EP2476644A3 (en) Method of making a MEMS device