JP2009123683A - 自動チップ形成を備える帯電粒子源 - Google Patents
自動チップ形成を備える帯電粒子源 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0805—Liquid metal sources
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30466—Detecting endpoint of process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
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Abstract
【解決手段】帯電粒子デバイスは、エミッタチップ13を含むエミッタユニットと、エミッタチップに安定な引出電界を生成するための定電圧を供給するように構成された電圧供給ユニット222と、安定引出電界に加えてパルス引出電界を生成するためのパルス電圧を供給するように構成されたパルス電圧供給部品224と、エミッタ特性を測定するための測定ユニット142、142’、142”と、測定ユニットから信号を受け取るように構成され、かつパルス電圧供給部品を制御するように構成された制御ユニット130とを含む。
【選択図】図11
Description
10 対物レンズ
12 支持線
13 エミッタ
15 ベース
50 試料支持台
130 制御装置
142、142’、142” ビーム特性測定ユニット
212 引出電極
222 静電圧源
224 パルス電圧供給
226 高電圧供給部分
227 所望RC定数生成部分
228 スイッチ
812 追加の電極
Claims (15)
- エミッタチップ(13)を含むエミッタユニットと、
前記エミッタチップに安定な引出電界を生成するための安定な電圧を供給するように構成された電圧供給ユニット(222)と、
前記安定引出電界に加えてパルス引出電界を生成するためのパルス電圧を供給するように構成されたパルス電圧供給部品(224、228)と、
エミッタ特性を測定するための測定ユニット(142、142’、142”)と、
前記測定ユニットから信号を受け取るように構成され、かつ前記パルス電圧供給部品を制御するように構成された制御ユニット(130)と、
を備える帯電粒子ビームデバイス。 - 前記パルス電圧供給部品が、前記電圧供給ユニットと直列に設けられている、請求項1に記載の帯電粒子ビームデバイス。
- 前記パルス電圧供給部品が、前記帯電粒子ビームデバイスの引出電極(212)及び/又は追加の電極(812)に接続されている、請求項2に記載の帯電粒子ビームデバイス。
- 前記パルス電圧供給部品が、前記電圧供給ユニットを安定動作モードからパルス動作モードに切り換えるように構成されている、請求項1に記載の帯電粒子ビームデバイス。
- 前記測定ユニット(142、142’、142”)が、ビーム電流測定システムを含む、請求項1〜4のいずれか一項に記載の帯電粒子ビームデバイス。
- 前記測定ユニットが、放出角度分布測定システムを含む、請求項1〜5のいずれか一項に記載の帯電粒子ビームデバイス。
- 前記パルス電圧供給部品が、1秒/kV以下の立ち上がり時間を有する、請求項1〜6のいずれか一項に記載の帯電粒子ビームデバイス。
- 前記エミッタユニットが、ガス電界イオン源である、請求項1〜7のいずれか一項に記載の帯電粒子ビームデバイス。
- エミッタチップを含むエミッタユニットを有する帯電粒子ビームデバイスを作動させる作動方法であって、
静電圧を供給することによって帯電粒子ビームを放出するステップと、
測定結果を供給するために前記帯電粒子ビームの特性を測定するステップと、
前記測定結果に依存して、前記静電圧に加えて電圧パルスを供給するステップと、
を含む作動方法。 - 一連の電圧パルスが供給される、請求項9に記載の帯電粒子ビームデバイスの作動方法。
- 少なくとも1つのさらなる測定結果を供給するために前記一連の電圧パルスのうちの2つの電圧パルスの間で測定が繰り返される、請求項9又は10に記載の帯電粒子ビームデバイスの作動方法。
- 前記一連の電圧パルスの電圧パルスの数が、前記少なくとも1つのさらなる測定結果に基づいて適合されており、及び/又は前記一連の電圧パルスの各々の若しくはいくつかの、又はすべての電圧パルスの振幅及び/又は期間が、前記少なくとも1つのさらなる測定結果に基づいて適合されている、請求項9〜11のいずれか一項に記載の帯電粒子ビームデバイスの作動方法。
- 前記一連の電圧パルスの各々の若しくはいくつかの、又はすべての電圧パルスの前記振幅が、電界蒸発閾値よりも下であり、前記電界蒸発閾値よりも上であるように大きくされる、請求項9〜12のいずれか一項に記載の帯電粒子ビームデバイスの作動方法。
- 前記電圧パルスの前記期間が、5秒以下である、請求項9〜13のいずれか一項に記載の帯電粒子ビームデバイスの作動方法。
- 前記電圧パルスの前記振幅が、前記静電圧の5%〜30%の範囲内である、請求項9〜14のいずれか一項に記載の帯電粒子ビームデバイスの作動方法。
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Application Number | Priority Date | Filing Date | Title |
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EP07022031A EP2068343B1 (en) | 2007-11-13 | 2007-11-13 | Charged particle source with automated tip formation |
EP07022031.4 | 2007-11-13 |
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JP2009123683A true JP2009123683A (ja) | 2009-06-04 |
JP5180747B2 JP5180747B2 (ja) | 2013-04-10 |
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US (1) | US8330130B2 (ja) |
EP (1) | EP2068343B1 (ja) |
JP (1) | JP5180747B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011210496A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置及びチップ先端構造検査方法 |
JP2011210493A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 荷電粒子ビーム装置、チップ再生方法、及び試料観察方法 |
JP2012529746A (ja) * | 2009-06-12 | 2012-11-22 | カール ツァイス エヌティーエス エルエルシー | 荷電粒子源の先端頂部を加熱する方法及びシステム |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2110843B1 (en) * | 2008-04-15 | 2011-08-24 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Stable emission gas ion source and method of operation thereof |
JP2013506959A (ja) * | 2009-09-30 | 2013-02-28 | カール ツァイス エヌティーエス エルエルシー | 可変エネルギー荷電粒子システム |
EP2365511B1 (en) * | 2010-03-10 | 2013-05-08 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Feedback loop for emitter flash cleaning |
US9960754B2 (en) * | 2010-06-08 | 2018-05-01 | Varex Imaging Corporation | Method and apparatus for interlaced amplitude pulsing using a hard-tube type pulse generator |
DE112011104535B4 (de) * | 2010-12-22 | 2017-08-17 | Hitachi High-Technologies Corporation | Gerät für einen Strahl von geladenen Teilchen |
US9530612B2 (en) | 2013-07-08 | 2016-12-27 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
US10354830B2 (en) | 2016-04-06 | 2019-07-16 | Carl Zeiss Microscopy, Llc | Charged particle beam system |
DE102017202339B3 (de) * | 2017-02-14 | 2018-05-24 | Carl Zeiss Microscopy Gmbh | Strahlsystem mit geladenen Teilchen und Verfahren dafür |
DE102020114999A1 (de) | 2020-06-05 | 2021-12-09 | Technische Universität Dresden | Verfahren und Vorrichtung zum Betreiben einer Flüssigmetall-Ionenquelle oder Flüssigmetall-Elektronenquelle sowie Flüssigmetall-Ionenquelle oder Flüssigmetall-Elektronenquelle |
US20230197399A1 (en) * | 2021-12-21 | 2023-06-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Electron microscope, electron source for electron microscope, and methods of operating an electron microscope |
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2007
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- 2008-10-16 US US12/253,042 patent/US8330130B2/en active Active
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JPS63141247A (ja) * | 1986-12-02 | 1988-06-13 | Sony Corp | イオンビ−ム装置 |
JPH07240165A (ja) * | 1994-02-25 | 1995-09-12 | Jeol Ltd | 電界電離型ガスフェーズイオン源の調整方法及びイオン源 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012529746A (ja) * | 2009-06-12 | 2012-11-22 | カール ツァイス エヌティーエス エルエルシー | 荷電粒子源の先端頂部を加熱する方法及びシステム |
US8993981B2 (en) | 2009-06-12 | 2015-03-31 | Carl Zeiss Microscopy, Llc | Charged particle source with light monitoring for tip temperature determination |
JP2011210496A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置及びチップ先端構造検査方法 |
JP2011210493A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 荷電粒子ビーム装置、チップ再生方法、及び試料観察方法 |
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US20090121160A1 (en) | 2009-05-14 |
JP5180747B2 (ja) | 2013-04-10 |
EP2068343A1 (en) | 2009-06-10 |
US8330130B2 (en) | 2012-12-11 |
EP2068343B1 (en) | 2011-08-31 |
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