JP2009105468A5 - - Google Patents

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Publication number
JP2009105468A5
JP2009105468A5 JP2009033349A JP2009033349A JP2009105468A5 JP 2009105468 A5 JP2009105468 A5 JP 2009105468A5 JP 2009033349 A JP2009033349 A JP 2009033349A JP 2009033349 A JP2009033349 A JP 2009033349A JP 2009105468 A5 JP2009105468 A5 JP 2009105468A5
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JP
Japan
Prior art keywords
substrate
processed
plasma processing
electrode
plasma
Prior art date
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Application number
JP2009033349A
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English (en)
Japanese (ja)
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JP2009105468A (ja
JP4697315B2 (ja
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Priority to JP2009033349A priority Critical patent/JP4697315B2/ja
Priority claimed from JP2009033349A external-priority patent/JP4697315B2/ja
Publication of JP2009105468A publication Critical patent/JP2009105468A/ja
Publication of JP2009105468A5 publication Critical patent/JP2009105468A5/ja
Application granted granted Critical
Publication of JP4697315B2 publication Critical patent/JP4697315B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2009033349A 2003-03-18 2009-02-17 プラズマ処理方法 Expired - Fee Related JP4697315B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009033349A JP4697315B2 (ja) 2003-03-18 2009-02-17 プラズマ処理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003073861 2003-03-18
JP2003073861 2003-03-18
JP2009033349A JP4697315B2 (ja) 2003-03-18 2009-02-17 プラズマ処理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004069155A Division JP4598416B2 (ja) 2003-03-18 2004-03-11 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2009105468A JP2009105468A (ja) 2009-05-14
JP2009105468A5 true JP2009105468A5 (enExample) 2010-11-18
JP4697315B2 JP4697315B2 (ja) 2011-06-08

Family

ID=34131323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009033349A Expired - Fee Related JP4697315B2 (ja) 2003-03-18 2009-02-17 プラズマ処理方法

Country Status (2)

Country Link
US (1) US7205250B2 (enExample)
JP (1) JP4697315B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050287814A1 (en) * 2004-06-29 2005-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. H2O plasma for simultaneous resist removal and charge releasing
US20060199393A1 (en) * 2004-06-29 2006-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. H20 plasma and h20 vapor methods for releasing charges
US20060175290A1 (en) * 2005-02-09 2006-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photo resist stripping and de-charge method for metal post etching to prevent metal corrosion
US20080129302A1 (en) * 2006-11-30 2008-06-05 Cyrus Shafai Microelectromechanical Electric Potential Sensor
JP6333302B2 (ja) * 2016-03-30 2018-05-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226292A (ja) * 1992-02-13 1993-09-03 Tokyo Electron Yamanashi Kk プラズマ処理開始方法
JP3170849B2 (ja) 1992-03-31 2001-05-28 松下電器産業株式会社 ドライエッチング方法
JP3227812B2 (ja) 1992-07-28 2001-11-12 松下電器産業株式会社 ドライエッチング方法
JPH06216060A (ja) * 1993-01-12 1994-08-05 Tokyo Electron Ltd 真空処理方法
JP3173691B2 (ja) 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
JPH11274138A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 試料処理方法
JP2001135618A (ja) * 1999-11-04 2001-05-18 Sharp Corp ドライエッチング装置
JP2001351905A (ja) * 2000-06-09 2001-12-21 Denso Corp ドライエッチング方法及びこの方法に用いるドライエッチング装置
US7247252B2 (en) * 2002-06-20 2007-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of avoiding plasma arcing during RIE etching
JP4322484B2 (ja) * 2002-08-30 2009-09-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US6703317B1 (en) * 2003-01-30 2004-03-09 Taiwan Semiconductor Manufacturing Co., Ltd Method to neutralize charge imbalance following a wafer cleaning process

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