JP2009105250A - ボールボンディング用金合金線 - Google Patents
ボールボンディング用金合金線 Download PDFInfo
- Publication number
- JP2009105250A JP2009105250A JP2007276104A JP2007276104A JP2009105250A JP 2009105250 A JP2009105250 A JP 2009105250A JP 2007276104 A JP2007276104 A JP 2007276104A JP 2007276104 A JP2007276104 A JP 2007276104A JP 2009105250 A JP2009105250 A JP 2009105250A
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- Prior art keywords
- wire
- mass
- bonding
- ball
- calcium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910001020 Au alloy Inorganic materials 0.000 title claims abstract description 52
- 239000003353 gold alloy Substances 0.000 title claims abstract description 51
- 239000011575 calcium Substances 0.000 claims abstract description 100
- 239000011777 magnesium Substances 0.000 claims abstract description 51
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 49
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 40
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000010931 gold Substances 0.000 claims abstract description 29
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052737 gold Inorganic materials 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000000654 additive Substances 0.000 description 36
- 230000000996 additive effect Effects 0.000 description 36
- 229910045601 alloy Inorganic materials 0.000 description 28
- 239000000956 alloy Substances 0.000 description 28
- 230000000694 effects Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 230000002411 adverse Effects 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005304 joining Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000005491 wire drawing Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000005482 strain hardening Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
【解決手段】 マグネシウム(Mg)を10〜50質量ppm、ユーロピウム(Eu)を5〜20質量ppm、カルシウム(Ca)を2〜9質量ppm、および残部が純度99.995質量%以上の金(Au)からなる金合金であって、カルシウム(Ca)はユーロピウム(Eu)の半分以下の質量であるボールボンディング用金合金線である。
【選択図】 図4
Description
ここで超音波併用熱圧着接合は、通常、ボールボンドボンディング方法により行われている。ボールボンドボンディング方法による接合法を、特許文献1に示されている図面を図1に再掲して説明する。
次いで、図1(b)に示すように、キャピラリー1を下降させて該ボール4をICチップ6上のアルミニウム電極5の上に押圧接合する。この時、図示しないが、超音波振動がキャピラリー1を通して付加されると共に、ICチップ6はヒーターブロックで加熱されるため、上記ボール4は熱圧着され、圧着ボール4’となる。
次いで、図1(d)に示すように、クランパー7はワイヤ2をクランプしたまま上昇することにより、ワイヤ2が切断され、配線が完了する。
ウェッジ接合用金合金線として、特許文献1では、高純度金にカルシウム(Ca)を1〜100質量ppm添加した金合金線であって、該金合金線の金純度が99.9質量%以上であり、引張強さが33.0kg/mm2以上、伸び率が1〜3%であることを特徴とする金合金線が開発されていた。この金合金線は、高温の接合強度に優れ、ICチップの高密度配線として好適で、ウェッジボンディングによっても良好に接合していた。
しかし、このボンディングワイヤは、ワイヤ強度に優れているものの、後述する比較例2で明らかなとおり、圧着ボール形状の真円性が悪く、また、ステッチ接合性も満足のいくものとはいえないものであった。
好ましい態様においては、微量な添加元素であるマグネシウム(Mg)は、15〜40質量ppm添加する。
ボンディングワイヤのステッチ接合は固相接合に分類される。固相接合に良い影響を及ぼす現象として、密着部形成の為の変形がし易く、密着部における結合力が高いことが知られている。
密着部形成の為の変形がし易いとは、弾性変形、塑性変形、クリープ変形、拡散による変形などがし易いことを意味している。この現象はステッチ接合においても同様であり、ボンディングワイヤの場合は、ワイヤ強度が低いほど密着部形成の為の変形がし易いと考えられるため、ワイヤ強度とステッチ接合性には負相関の関係がある。
溶融ボールとは、大気中でスパークを飛ばしてボンディングワイヤの先端を溶かして得られたボールのことである。いくつかの添加元素について、添加量が多くなるとボール全面や、ボールとワイヤとの境界(ネックという)部分に添加元素の酸化物が確認される。また、場合によっては、ボール底辺に引け巣が発生することもある。ボンディングワイヤの性能上、溶融ボール形成性は重要であり、酸化物や引け巣は極力少なくすることが求められている。本発明の微量な添加元素を所定の配合比で使用することで実用性に耐え満足する溶融ボール形成性が得られる。
半導体装置の高密度実装化によりICチップ上のアルミニウム電極の間隔および面積が狭小化してきている。間隔および面積が狭小化したアルミニウム電極上にボンディングする際には、隣接する圧着ボール同士の接触を防止するために、圧着ボール形状の真円性向上が必要不可欠となる。圧着ボール形状の真円性に対しては添加元素の配合比の影響が大きく、配合比のバランスが崩れることにより溶融ボールを圧着させた際の変形が不均一となり圧着ボール形状の真円性が保てなくなる。さらに圧着ボール形状の真円性は、ステッチ接合性と同様に、ワイヤ強度と負相関の傾向にある。本発明の微量な添加元素を所定の配合比で使用することで実用性に耐えうる圧着ボール形状の真円性とワイヤ強度の両立が達成される。
本発明の合金系において、マグネシウム(Mg)は圧着ボール形状の真円性に最も効果的な元素である。
本発明の合金系において、マグネシウム(Mg)はワイヤ強度にはあまり効果をもたらさない添加元素である。
本発明の合金系において、マグネシウム(Mg)は10質量ppm以上必要である。これ未満では圧着ボール形状の真円性に効果がないからである。本発明の合金系において、圧着ボール形状の真円性を安定させるには、マグネシウム(Mg)は15質量ppm以上が好ましい。他方、本発明の合金系において、マグネシウム(Mg)が50質量ppmを超えて多くなりすぎても、溶融ボール形成性に悪影響を及ぼす。本発明の合金系において、良好な溶融ボール形成性を得るには、マグネシウム(Mg)は40質量ppm以下が好ましい。
本発明の合金系において、ユーロピウム(Eu)はボンディングワイヤのワイヤ強度に効果的な元素であるが、後述のカルシウム(Ca)ほどの効果はない。
また、本発明の合金系において、ユーロピウム(Eu)は圧着ボール形状の真円性に効果的な元素であるが、マグネシウム(Mg)ほどの効果はない。
本発明の合金系において、ユーロピウム(Eu)は5質量ppm以上必要である。これ未満ではワイヤ強度に効果がないからである。他方、本発明の合金系において、ユーロピウム(Eu)が20質量ppmを超えると、溶融ボール形成性に悪影響を及ぼす。
本発明の合金系において、カルシウム(Ca)はボンディングワイヤのワイヤ強度に最も効果的な元素である。しかしながら、カルシウム(Ca)は、圧着ボール形状の真円性に悪影響を及ぼす元素でもある。そのため本発明の合金系において、カルシウム(Ca)が有効な組成範囲は2〜9質量ppmと非常に狭い範囲に限定される。この範囲内でしかカルシウム(Ca)は本発明の合金系において効果を発揮しない。
本発明の合金系において、カルシウム(Ca)が2質量ppm未満ではワイヤ強度に効果がなく、9質量ppmを超えると圧着ボール形状の真円性に悪影響を及ぼすからである。
本発明の合金系において、ユーロピウム(Eu)はカルシウム(Ca)と相互作用をしていると考えられる。すなわち、ユーロピウム(Eu)とカルシウム(Ca)はいずれもワイヤ強度に効果的な添加元素であるが、これらの微量な添加元素を共に添加することによって更にワイヤ強度を向上させる効果がある。ただし、合計の添加量は25質量ppm以下にすることが望ましい。25質量ppmを超えると、ステッチ接合性および圧着ボール形状の真円性に悪影響を及ぼすからである。
また、カルシウム(Ca)はユーロピウム(Eu)の半分以下の添加量であることが必要である。カルシウム(Ca)はワイヤ強度に最も効果的な元素であるが、圧着ボール形状の真円性に悪影響を及ぼすからである。
本発明の合金系において、スズ(Sn)は圧着ボール形状の真円性を良くする元素であるが、マグネシウム(Mg)ほどの効果はない。
本発明の合金系において、スズ(Sn)はボンディングワイヤのワイヤ強度にはあまり効果をもたらさない元素である。
本発明の合金系において、スズ(Sn)が効果を発揮するためにはマグネシウム(Mg)の存在を必要とする。
本発明の合金系において、スズ(Sn)が効果を発揮するには、スズ(Sn)が1質量ppm以上必要である。これ未満ではマグネシウム(Mg)の圧着ボール形状の真円性の改善効果に打ち消されてしまい、スズ(Sn)の添加効果が現れないからである。本発明の合金系において、スズ(Sn)が30質量ppmを超えて多くなりすぎると、溶融ボール形成性に悪影響を及ぼす。
伸び率を4%に調製したときの本発明の金合金のワイヤ強度に関して、従来と同様の測定方法を用いて評価した。なお、伸び率は、室温で標点距離を100mmとして、引張試験機により金合金線を引張速度10mm/分で引っ張り、破断した時の伸び量を次式に代入して、求めた。
具体的には、ワイヤ強度11.5g(112.7mN)以上あるものを◎印で、ワイヤ強度11.5g(112.7mN)未満〜10.0g(98mN)以上のものを○印で、ワイヤ強度10.0g(98mN)未満〜8.5g(83.3mN)以上のものを△印で、ワイヤ強度8.5g(83.3mN)未満のものを×印で表した。
溶融ボール形成性は、一般的な走査電子顕微鏡観察、光学顕微鏡観察により容易に確認することが可能である。
本発明では、判定は、測定数を10個とし、走査電子顕微鏡観察により全面的な酸化物による汚れや引け巣が6個以上確認された試料を×、5個〜2個確認された試料を△、1個以下の試料を○と判定した。
ステッチ接合とは、ボンディングワイヤにキャピラリーを介して荷重・超音波などを加えながら押し付けて変形させ、Ag、Au、Pdなどによりめっき処理されたフレームまたは基板上に接合させることをいう。ステッチ接合性に関して、本発明の金合金は、従来の金合金と同様に、ステッチ接合性を高く維持させることができる。
測定方法は、ボンディング直後の試料を用い、ICチップ側とリード端子を治具で固定し、ワイヤを上方に引っ張り剥離強度を測定した。判定は、測定数30個の平均値を測定値とし、値が高い試料を良いとした。
具体的には、剥離強度7.0g(68.6mN)以上のものを◎印で、剥離強度7.0g(68.6mN)未満〜5.0g(49.0mN)以上のものを○印で、剥離強度5.0g(49.0mN)未満〜3.0g(29.4mN)のもの以上を△印で、剥離強度3.0g(29.4mN)未満を×印で表した。
圧着ボール形状の真円性の評価は、シリコンチップ上のアルミニウム電極(アルミニウム厚:約7×10-8m)に圧着ボール径がおおよそ63μmとなる条件でボールボンディングをし、その後、銀(Ag)めっきされた42アロイからなるリードとの間でステッチ接合をし、ボールボンディング法にて結線した。その際、スパンは3×10-3mで、本数を200本とし、結線したワイヤのうちから任意で50個の圧着ボールを用いて圧着ボール形状の真円性を評価した。超音波の印加方向と平行方向の圧着径および垂直方向の圧着径を測定し、合計50個の圧着ボールの標準偏差が低い試料を良好とした。
具体的には、標準偏差0.7μm未満を◎印で、標準偏差0.7μm以上〜1.0μm未満を○印で、標準偏差1.0μm以上〜1.5μm未満を△印で、標準偏差1.5μm以上を×印で表した。
本発明に係る金合金線の好ましい製造方法を説明する。
高純度金に所定量の元素を添加し真空溶解炉で溶解し鋳造する。鋳造したインゴットに溝ロール圧延機を用いた圧延加工および伸線機を用いた冷間加工と中間アニールを施し、最終伸線加工により直径25μmの細線とした後、最終アニールをして伸び率を4%に調製するものである。
純度99.999質量%以上の金線は、ワイヤ強度が低く、ワイヤ強度の経時低下もみられる。そのため、ボンディングワイヤとして用いられる金合金線は、それぞれ任意の添加元素を所定量添加し、純度99.999質量%以上の金線よりもワイヤ強度が高められている。市販されている大多数のボンディングワイヤは、ベリリウム(Be)、カルシウム(Ca)、いくつかの希土類元素などが添加されているが、これらの添加元素にはワイヤ強度向上効果がある。
具体的には、本発明の合金系において、カルシウム(Ca)はユーロピウム(Eu)よりもボンディングワイヤのワイヤ強度に効き目が強い。そこで、ボンディングワイヤのワイヤ強度に及ぼすカルシウム(Ca)の影響を従とし、ユーロピウム(Eu)の影響を主とするため、カルシウム(Ca)はユーロピウム(Eu)の半分以下の添加量であるとした。
純度99.999質量%の高純度金に所定量の添加元素を微量に添加し、真空溶解炉で溶解した後鋳造して表1左欄に示す組成の金合金インゴットを得た。該当インゴットに溝ロール圧延機を用いた圧延加工および伸線機を用いた冷間加工と中間アニールを施し、最終伸線加工により直径25μmの細線とした後、最終アニールをして伸び率4%になるように調製した。
このときICチップ側の接合条件は、荷重を30g、接合時間を12ミリ秒、超音波出力を300mWとした。一方、リード端子側の接合条件は、荷重を40g、接合時間を10ミリ秒、超音波出力を400mWとした。共通の接合条件である接合温度は200℃で行い、キャピラリーはエスピーティ株式会社製のSBNS―33CD―AZM―1/16―XLを用いた。
次に、ボンディング直後の試料を用いて、圧着ボール形状の真円性はアルミニウム電極上から測定し、ステッチ接合性はリード端子付近のワイヤ剥離強度から測定した。それぞれの測定結果を表1右欄に示す。
(1)実施例1〜12は、走査電子顕微鏡観察により観察したところ、全面的な酸化物による汚れや引け巣があまりなく、溶融ボール形成性が実用性に耐え満足するものであった。これに対して、マグネシウム(Mg)添加量が上限値を超えている比較例4、および、スズ(Sn)添加量が上限値を超えている比較例5は、走査電子顕微鏡観察により全面的な酸化物による汚れや引け巣が数多く観察され、溶融ボール形成性が実用性に耐えず満足するものでなかった。
2:ワイヤ
3:電気トーチ
4:ボール
4′:圧着ボール
5:Al電極
6:ICチップ
7:クランパー
8:外部配線
D:ワイヤ径
L1:圧着ボール径
L2:つぶれ幅
Claims (5)
- マグネシウム(Mg)を10〜50質量ppm、ユーロピウム(Eu)を5〜20質量ppm、カルシウム(Ca)を2〜9質量ppm、および残部が純度99.998質量%以上の金(Au)からなる金合金であって、カルシウム(Ca)はユーロピウム(Eu)の半分以下の添加量であることを特徴とするボールボンディング用金合金線。
- マグネシウム(Mg)を10〜50質量ppm、スズ(Sn)を1〜30質量ppm、ユーロピウム(Eu)を5〜20質量ppm、カルシウム(Ca)を2〜9質量ppm、および残部が純度99.998質量%以上の金(Au)からなる金合金であって、カルシウム(Ca)はユーロピウム(Eu)の半分以下の添加量であることを特徴とするボールボンディング用金合金線。
- マグネシウム(Mg)が10〜50質量ppm、ユーロピウム(Eu)を5〜20質量ppm、カルシウム(Ca)を2〜9質量ppm、および残部が純度99.998質量%以上の金(Au)からなる金合金であって、カルシウム(Ca)はユーロピウム(Eu)の半分以下の質量であり、かつ、ユーロピウム(Eu)とカルシウム(Ca)合計の添加量が25質量ppm以下の添加量であることを特徴とするボールボンディング用金合金線。
- マグネシウム(Mg)を10〜50質量ppm、スズ(Sn)を1〜30質量ppm、ユーロピウム(Eu)を5〜20質量ppm、カルシウム(Ca)を2〜9質量ppm、および残部が純度が99.998質量%以上の金(Au)からなる金合金であって、カルシウム(Ca)はユーロピウム(Eu)の半分以下の添加量であり、かつ、ユーロピウム(Eu)とカルシウム(Ca)合計の添加量が25質量ppm以下の添加量であることを特徴とするボールボンディング用金合金線。
- マグネシウム(Mg)が15〜40質量ppmであることを特徴とする請求項1ないし請求項4のいずれかに記載のボールボンディング用金合金線。
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JP2007276104A JP4134261B1 (ja) | 2007-10-24 | 2007-10-24 | ボールボンディング用金合金線 |
KR1020087025455A KR101047827B1 (ko) | 2007-10-24 | 2008-06-23 | 볼 본딩용 금합금선 |
CN2008800001948A CN101601126B (zh) | 2007-10-24 | 2008-06-23 | 用于球焊的金合金线 |
MYPI20084383A MY155023A (en) | 2007-10-24 | 2008-06-23 | Gold alloy wire for ball bonding |
US12/224,212 US8147750B2 (en) | 2007-10-24 | 2008-06-23 | Gold alloy wire for ball bonding |
PCT/JP2008/061424 WO2009054164A1 (ja) | 2007-10-24 | 2008-06-23 | ボールボンディング用金合金線 |
EP08790566.7A EP2204846A4 (en) | 2007-10-24 | 2008-06-23 | GOLD ALLOY WIRE FOR WELDING BY BALL CRUSHING |
TW097134412A TWI371812B (en) | 2007-10-24 | 2008-09-08 | Gold alloy wire for ball bonding |
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JPH104114A (ja) | 1996-06-17 | 1998-01-06 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP3657087B2 (ja) | 1996-07-31 | 2005-06-08 | 田中電子工業株式会社 | ウエッジボンディング用金合金線 |
US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
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US20080050267A1 (en) * | 2004-09-30 | 2008-02-28 | Hiroshi Murai | Au Alloy Bonding Wire |
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