JP2009086094A - マスクブランク及び転写用マスク - Google Patents
マスクブランク及び転写用マスク Download PDFInfo
- Publication number
- JP2009086094A JP2009086094A JP2007253250A JP2007253250A JP2009086094A JP 2009086094 A JP2009086094 A JP 2009086094A JP 2007253250 A JP2007253250 A JP 2007253250A JP 2007253250 A JP2007253250 A JP 2007253250A JP 2009086094 A JP2009086094 A JP 2009086094A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- transfer
- film
- haze
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims description 23
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 230000001699 photocatalysis Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 17
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 82
- 239000010410 layer Substances 0.000 description 82
- 230000009467 reduction Effects 0.000 description 19
- 239000011651 chromium Substances 0.000 description 16
- 230000010363 phase shift Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 13
- 229910052804 chromium Inorganic materials 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 11
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000011941 photocatalyst Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 5
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- -1 sulfide ions Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 229910008828 WSiO Inorganic materials 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- FXNGWBDIVIGISM-UHFFFAOYSA-N methylidynechromium Chemical compound [Cr]#[C] FXNGWBDIVIGISM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007253250A JP2009086094A (ja) | 2007-09-28 | 2007-09-28 | マスクブランク及び転写用マスク |
| PCT/JP2008/067098 WO2009041388A1 (ja) | 2007-09-28 | 2008-09-22 | マスクブランク及び転写用マスク |
| TW097137086A TW200921267A (en) | 2007-09-28 | 2008-09-26 | Mask blank and transfer mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007253250A JP2009086094A (ja) | 2007-09-28 | 2007-09-28 | マスクブランク及び転写用マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009086094A true JP2009086094A (ja) | 2009-04-23 |
| JP2009086094A5 JP2009086094A5 (enExample) | 2010-10-07 |
Family
ID=40511273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007253250A Pending JP2009086094A (ja) | 2007-09-28 | 2007-09-28 | マスクブランク及び転写用マスク |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009086094A (enExample) |
| TW (1) | TW200921267A (enExample) |
| WO (1) | WO2009041388A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010008604A (ja) * | 2008-06-25 | 2010-01-14 | Hoya Corp | マスクブランク及び転写用マスク |
| JP2011095347A (ja) * | 2009-10-27 | 2011-05-12 | Hoya Corp | マスクブランク、転写用マスクおよび転写用マスクセット |
| US8361679B2 (en) | 2009-10-09 | 2013-01-29 | Samsung Electronics Co. Ltd. | Phase shift masks |
| US8968970B2 (en) | 2009-10-09 | 2015-03-03 | Samsung Electronics Co., Ltd. | Phase shift masks and methods of forming phase shift masks |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0647953U (ja) * | 1992-11-30 | 1994-06-28 | 京セラ株式会社 | フォトマスク |
| JPH0784357A (ja) * | 1993-09-14 | 1995-03-31 | Nikon Corp | 露光マスクおよび投影露光方法 |
| JPH10112429A (ja) * | 1996-10-07 | 1998-04-28 | Nippon Telegr & Teleph Corp <Ntt> | 光露光システム |
| JPH10125583A (ja) * | 1996-10-24 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | X線マスク |
| JP2000284468A (ja) * | 1999-03-31 | 2000-10-13 | Canon Inc | マスク構造体、該マスク構造体を用いた露光方法および露光装置、該マスク構造体を用いて作製された半導体デバイス、ならびに半導体デバイス製造方法 |
| JP2003243292A (ja) * | 2002-02-18 | 2003-08-29 | Nikon Corp | 反射マスク、露光装置及びその清掃方法 |
| JP2003295428A (ja) * | 2001-03-29 | 2003-10-15 | Dainippon Printing Co Ltd | パターン形成体の製造方法およびそれに用いるフォトマスク |
| JP2005175324A (ja) * | 2003-12-12 | 2005-06-30 | Nikon Corp | マスク汚染防止方法、マスク汚染防止装置及び露光装置 |
| JP2005186005A (ja) * | 2003-12-26 | 2005-07-14 | Dainippon Printing Co Ltd | 光触媒含有層基板およびパターン形成体の製造方法 |
| JP2006047539A (ja) * | 2004-08-03 | 2006-02-16 | Toppan Printing Co Ltd | フォトマスク及びその製造方法 |
| JP2006243162A (ja) * | 2005-03-01 | 2006-09-14 | Dainippon Printing Co Ltd | 露光用マスクおよびその製造方法 |
| JP2007184361A (ja) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | 薄膜デバイス用ガラス基板およびその成膜方法 |
| JP2008197234A (ja) * | 2007-02-09 | 2008-08-28 | Nsk Ltd | 近接露光用フォトマスク、露光方法及び露光装置 |
| JP2008286838A (ja) * | 2007-05-15 | 2008-11-27 | Canon Inc | 露光用マスク、パターン形成装置及びパターン形成方法 |
-
2007
- 2007-09-28 JP JP2007253250A patent/JP2009086094A/ja active Pending
-
2008
- 2008-09-22 WO PCT/JP2008/067098 patent/WO2009041388A1/ja not_active Ceased
- 2008-09-26 TW TW097137086A patent/TW200921267A/zh unknown
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0647953U (ja) * | 1992-11-30 | 1994-06-28 | 京セラ株式会社 | フォトマスク |
| JPH0784357A (ja) * | 1993-09-14 | 1995-03-31 | Nikon Corp | 露光マスクおよび投影露光方法 |
| JPH10112429A (ja) * | 1996-10-07 | 1998-04-28 | Nippon Telegr & Teleph Corp <Ntt> | 光露光システム |
| JPH10125583A (ja) * | 1996-10-24 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | X線マスク |
| JP2000284468A (ja) * | 1999-03-31 | 2000-10-13 | Canon Inc | マスク構造体、該マスク構造体を用いた露光方法および露光装置、該マスク構造体を用いて作製された半導体デバイス、ならびに半導体デバイス製造方法 |
| JP2003295428A (ja) * | 2001-03-29 | 2003-10-15 | Dainippon Printing Co Ltd | パターン形成体の製造方法およびそれに用いるフォトマスク |
| JP2003243292A (ja) * | 2002-02-18 | 2003-08-29 | Nikon Corp | 反射マスク、露光装置及びその清掃方法 |
| JP2005175324A (ja) * | 2003-12-12 | 2005-06-30 | Nikon Corp | マスク汚染防止方法、マスク汚染防止装置及び露光装置 |
| JP2005186005A (ja) * | 2003-12-26 | 2005-07-14 | Dainippon Printing Co Ltd | 光触媒含有層基板およびパターン形成体の製造方法 |
| JP2006047539A (ja) * | 2004-08-03 | 2006-02-16 | Toppan Printing Co Ltd | フォトマスク及びその製造方法 |
| JP2006243162A (ja) * | 2005-03-01 | 2006-09-14 | Dainippon Printing Co Ltd | 露光用マスクおよびその製造方法 |
| JP2007184361A (ja) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | 薄膜デバイス用ガラス基板およびその成膜方法 |
| JP2008197234A (ja) * | 2007-02-09 | 2008-08-28 | Nsk Ltd | 近接露光用フォトマスク、露光方法及び露光装置 |
| JP2008286838A (ja) * | 2007-05-15 | 2008-11-27 | Canon Inc | 露光用マスク、パターン形成装置及びパターン形成方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010008604A (ja) * | 2008-06-25 | 2010-01-14 | Hoya Corp | マスクブランク及び転写用マスク |
| US8361679B2 (en) | 2009-10-09 | 2013-01-29 | Samsung Electronics Co. Ltd. | Phase shift masks |
| US8968970B2 (en) | 2009-10-09 | 2015-03-03 | Samsung Electronics Co., Ltd. | Phase shift masks and methods of forming phase shift masks |
| JP2011095347A (ja) * | 2009-10-27 | 2011-05-12 | Hoya Corp | マスクブランク、転写用マスクおよび転写用マスクセット |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200921267A (en) | 2009-05-16 |
| WO2009041388A1 (ja) | 2009-04-02 |
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