WO2009041388A1 - マスクブランク及び転写用マスク - Google Patents
マスクブランク及び転写用マスク Download PDFInfo
- Publication number
- WO2009041388A1 WO2009041388A1 PCT/JP2008/067098 JP2008067098W WO2009041388A1 WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1 JP 2008067098 W JP2008067098 W JP 2008067098W WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mask
- transferring
- less
- blank
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-253250 | 2007-09-28 | ||
| JP2007253250A JP2009086094A (ja) | 2007-09-28 | 2007-09-28 | マスクブランク及び転写用マスク |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009041388A1 true WO2009041388A1 (ja) | 2009-04-02 |
Family
ID=40511273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/067098 Ceased WO2009041388A1 (ja) | 2007-09-28 | 2008-09-22 | マスクブランク及び転写用マスク |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009086094A (enExample) |
| TW (1) | TW200921267A (enExample) |
| WO (1) | WO2009041388A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010008604A (ja) * | 2008-06-25 | 2010-01-14 | Hoya Corp | マスクブランク及び転写用マスク |
| KR101663173B1 (ko) | 2009-10-09 | 2016-10-07 | 삼성전자주식회사 | 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법 |
| US8968970B2 (en) | 2009-10-09 | 2015-03-03 | Samsung Electronics Co., Ltd. | Phase shift masks and methods of forming phase shift masks |
| JP5602412B2 (ja) * | 2009-10-27 | 2014-10-08 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクセットおよび半導体デバイスの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10112429A (ja) * | 1996-10-07 | 1998-04-28 | Nippon Telegr & Teleph Corp <Ntt> | 光露光システム |
| JPH10125583A (ja) * | 1996-10-24 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | X線マスク |
| JP2000284468A (ja) * | 1999-03-31 | 2000-10-13 | Canon Inc | マスク構造体、該マスク構造体を用いた露光方法および露光装置、該マスク構造体を用いて作製された半導体デバイス、ならびに半導体デバイス製造方法 |
| JP2003243292A (ja) * | 2002-02-18 | 2003-08-29 | Nikon Corp | 反射マスク、露光装置及びその清掃方法 |
| JP2007184361A (ja) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | 薄膜デバイス用ガラス基板およびその成膜方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2591244Y2 (ja) * | 1992-11-30 | 1999-03-03 | 京セラ株式会社 | フォトマスク |
| JPH0784357A (ja) * | 1993-09-14 | 1995-03-31 | Nikon Corp | 露光マスクおよび投影露光方法 |
| JP4201162B2 (ja) * | 2001-03-29 | 2008-12-24 | 大日本印刷株式会社 | パターン形成体の製造方法およびそれに用いるフォトマスク |
| JP2005175324A (ja) * | 2003-12-12 | 2005-06-30 | Nikon Corp | マスク汚染防止方法、マスク汚染防止装置及び露光装置 |
| JP2005186005A (ja) * | 2003-12-26 | 2005-07-14 | Dainippon Printing Co Ltd | 光触媒含有層基板およびパターン形成体の製造方法 |
| JP4635509B2 (ja) * | 2004-08-03 | 2011-02-23 | 凸版印刷株式会社 | フォトマスクの製造方法 |
| JP4601459B2 (ja) * | 2005-03-01 | 2010-12-22 | 大日本印刷株式会社 | 露光用マスクおよびその製造方法 |
| JP2008197234A (ja) * | 2007-02-09 | 2008-08-28 | Nsk Ltd | 近接露光用フォトマスク、露光方法及び露光装置 |
| JP2008286838A (ja) * | 2007-05-15 | 2008-11-27 | Canon Inc | 露光用マスク、パターン形成装置及びパターン形成方法 |
-
2007
- 2007-09-28 JP JP2007253250A patent/JP2009086094A/ja active Pending
-
2008
- 2008-09-22 WO PCT/JP2008/067098 patent/WO2009041388A1/ja not_active Ceased
- 2008-09-26 TW TW097137086A patent/TW200921267A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10112429A (ja) * | 1996-10-07 | 1998-04-28 | Nippon Telegr & Teleph Corp <Ntt> | 光露光システム |
| JPH10125583A (ja) * | 1996-10-24 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | X線マスク |
| JP2000284468A (ja) * | 1999-03-31 | 2000-10-13 | Canon Inc | マスク構造体、該マスク構造体を用いた露光方法および露光装置、該マスク構造体を用いて作製された半導体デバイス、ならびに半導体デバイス製造方法 |
| JP2003243292A (ja) * | 2002-02-18 | 2003-08-29 | Nikon Corp | 反射マスク、露光装置及びその清掃方法 |
| JP2007184361A (ja) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | 薄膜デバイス用ガラス基板およびその成膜方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009086094A (ja) | 2009-04-23 |
| TW200921267A (en) | 2009-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1526405A3 (en) | Phase shift mask blank, phase shift mask, and pattern transfer method | |
| WO2008129914A1 (ja) | Euvマスクブランク | |
| TW200833732A (en) | Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process | |
| WO2008093534A1 (ja) | Euvリソグラフィ用反射型マスクブランク | |
| TW200834226A (en) | Mask blank and method for manufacturing transfer mask | |
| JP2016164683A5 (enExample) | ||
| WO2009059128A3 (en) | Crystalline-thin-film photovoltaic structures and methods for forming the same | |
| JP2010039352A5 (enExample) | ||
| WO2009075793A3 (en) | Controlling thickness of residual layer | |
| EP2881790A3 (en) | Photomask blank | |
| TW200641543A (en) | Underlayer coating forming composition for lithography containing compound having protected carboxy group | |
| WO2006108611A3 (de) | Transferfolie mit reliefstrukturschicht | |
| JP2011164598A5 (enExample) | ||
| WO2008084680A1 (ja) | Euvリソグラフィ用反射型マスクブランク | |
| WO2009034954A1 (ja) | TiO2含有石英ガラス基板 | |
| WO2008087763A1 (ja) | 半導体装置およびその製造方法 | |
| WO2009147602A3 (en) | Silicone rubber material for soft lithography | |
| JP2015102633A5 (enExample) | ||
| TW200720837A (en) | Photomask blank and process for producing the same, process for producing photomask, and process for producing semiconductor device | |
| WO2007053202A3 (en) | Systems and methods for nanomaterial transfer | |
| WO2009041388A1 (ja) | マスクブランク及び転写用マスク | |
| JP2017223890A5 (enExample) | ||
| SG183079A1 (en) | Reduced residual formation in etched multi-layerstacks | |
| JP2011059502A5 (enExample) | ||
| AR044334A1 (es) | Proceso para preparar un material compuesto |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08833317 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 08833317 Country of ref document: EP Kind code of ref document: A1 |