JP2009071307A - コーナーリフレクタを有する半導体装置 - Google Patents

コーナーリフレクタを有する半導体装置 Download PDF

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Publication number
JP2009071307A
JP2009071307A JP2008231300A JP2008231300A JP2009071307A JP 2009071307 A JP2009071307 A JP 2009071307A JP 2008231300 A JP2008231300 A JP 2008231300A JP 2008231300 A JP2008231300 A JP 2008231300A JP 2009071307 A JP2009071307 A JP 2009071307A
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JP
Japan
Prior art keywords
semiconductor laser
laser device
corner reflector
resonator
emitted
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Pending
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JP2008231300A
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English (en)
Japanese (ja)
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JP2009071307A5 (https=
Inventor
Hans Lindberg
リンドベルグ ハンス
Stefan Illek
イレック シュテファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2009071307A publication Critical patent/JP2009071307A/ja
Publication of JP2009071307A5 publication Critical patent/JP2009071307A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2008231300A 2007-09-11 2008-09-09 コーナーリフレクタを有する半導体装置 Pending JP2009071307A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007043189 2007-09-11
DE102007053296A DE102007053296A1 (de) 2007-09-11 2007-11-08 Halbleitervorrichtung mit Winkelreflektor

Publications (2)

Publication Number Publication Date
JP2009071307A true JP2009071307A (ja) 2009-04-02
JP2009071307A5 JP2009071307A5 (https=) 2011-09-15

Family

ID=40340185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008231300A Pending JP2009071307A (ja) 2007-09-11 2008-09-09 コーナーリフレクタを有する半導体装置

Country Status (4)

Country Link
US (1) US7756188B2 (https=)
EP (1) EP2037549A3 (https=)
JP (1) JP2009071307A (https=)
DE (1) DE102007053296A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108384A (ja) 1982-12-13 1984-06-22 Matsushita Electric Ind Co Ltd 光帰還型半導体レ−ザ装置
JPH07283485A (ja) * 1992-11-24 1995-10-27 Internatl Business Mach Corp <Ibm> 導波路型光アイソレータ
JPH1168606A (ja) 1997-06-09 1999-03-09 Mitsubishi Electric Corp 周波数混合器及びこの周波数混合器を用いた送信装置、受信装置、送受信装置
JP2002313783A (ja) * 2001-04-12 2002-10-25 Canon Inc 多角形半導体リングレーザの作製方法及び多角形半導体リングレーザ、多角形半導体リングレーザジャイロ
JP2005518656A (ja) * 2001-08-01 2005-06-23 ビノプティクス・コーポレイション 湾曲導波路型リングレーザ
JP2007511081A (ja) * 2003-11-13 2007-04-26 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 光学的にポンピングされる半導体レーザー装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851368A (en) * 1987-12-04 1989-07-25 Cornell Research Foundation, Inc. Method of making travelling wave semi-conductor laser
JP3559680B2 (ja) * 1997-04-25 2004-09-02 キヤノン株式会社 リング共振器型面発光半導体レーザ及びその製造法
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6704336B1 (en) * 2000-07-22 2004-03-09 Joseph Reid Henrichs Folded cavity surface emitting laser
CA2328637A1 (en) * 2000-12-15 2002-06-15 Richard D. Clayton Lateral optical pumping of vertical cavity surface emitting laser
DE10214120B4 (de) * 2002-03-28 2007-06-06 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
TW595059B (en) * 2002-05-03 2004-06-21 Osram Opto Semiconductors Gmbh Optically pumped semiconductor laser device
DE10241192A1 (de) 2002-09-05 2004-03-11 Osram Opto Semiconductors Gmbh Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung
US7035508B2 (en) 2003-04-18 2006-04-25 Metrophotonics Inc. Waveguide structure having improved reflective mirror features

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108384A (ja) 1982-12-13 1984-06-22 Matsushita Electric Ind Co Ltd 光帰還型半導体レ−ザ装置
JPH07283485A (ja) * 1992-11-24 1995-10-27 Internatl Business Mach Corp <Ibm> 導波路型光アイソレータ
JPH1168606A (ja) 1997-06-09 1999-03-09 Mitsubishi Electric Corp 周波数混合器及びこの周波数混合器を用いた送信装置、受信装置、送受信装置
JP2002313783A (ja) * 2001-04-12 2002-10-25 Canon Inc 多角形半導体リングレーザの作製方法及び多角形半導体リングレーザ、多角形半導体リングレーザジャイロ
JP2005518656A (ja) * 2001-08-01 2005-06-23 ビノプティクス・コーポレイション 湾曲導波路型リングレーザ
JP2007511081A (ja) * 2003-11-13 2007-04-26 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 光学的にポンピングされる半導体レーザー装置

Also Published As

Publication number Publication date
US7756188B2 (en) 2010-07-13
US20090080481A1 (en) 2009-03-26
EP2037549A2 (de) 2009-03-18
EP2037549A3 (de) 2011-05-18
DE102007053296A1 (de) 2009-03-12

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