JP2009059871A - 有機金属化合物供給容器 - Google Patents
有機金属化合物供給容器 Download PDFInfo
- Publication number
- JP2009059871A JP2009059871A JP2007225595A JP2007225595A JP2009059871A JP 2009059871 A JP2009059871 A JP 2009059871A JP 2007225595 A JP2007225595 A JP 2007225595A JP 2007225595 A JP2007225595 A JP 2007225595A JP 2009059871 A JP2009059871 A JP 2009059871A
- Authority
- JP
- Japan
- Prior art keywords
- container
- carrier gas
- organometallic compound
- carrier
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Abstract
【解決手段】容器上部にキャリアガス導入管の先端部、底部にキャリアガス導出管の先端部を配設し、かつ該容器内に有機金属化合物に対して不活性な担体に常温で固体の有機金属化合物を被覆した担体担持有機金属化合物を充填してなる有機金属化合物供給容器において、キャリアガス導入管の先端部より供給されるキャリアガスが、容器を垂直に設置した場合、その中心軸に対し略垂直方向に噴出するように、キャリアガス導入管の先端部を構成していることを特徴とする。
【選択図】 図1
Description
担体の形状は特に限定されるものではなく、不定形状、球状、繊維状、網状、コイル状、円管状等各種形状のものが使用される。
担体は比表面積が大きい方が好ましく、担体表面が平滑なものより約100〜2000μm程度の微細な凹凸を有するもの、あるいは担体自身に多数の気孔(空隙)を有するものが好ましい。このような担体としてはアルミナボール、ラシヒリング、ヘリパック、ディクソンパッキン、ステンレス焼結エレメント、グラスウール等が挙げられる。
容器の底部とキャリアガス導出管の先端部5との間隔は約2〜15mm、好ましくは約2〜10mm、さらに好ましくは2〜5mmである。約15mmより大きくなると有機金属化合物の使用率が低下するので好ましくない。
(容器A)
図1に模式的に示したと同様に容器の天板に、キャリアガス導入管2、キャリアガス導出管4、担体および有機金属化合物の投入口を配設した内容積800mlのステンレス製容器(湾曲状の底部)を用いた。キャリアガス導入管の先端部は、図2(A)に示すように、容器天板7の部分の開口部に直径18mmの円盤状の邪魔板3’を天板との間隔を約3mmとして天板に対し水平に取り付けて構成した。また、容器の底部とキャリアガス導出管の先端部5との間隔は3mmとした。
(容器B)
キャリアガス導入管2の先端部3が図4に示すような容器天板に対して鉛直方向を向いており、キャリアガス導入管2の先端部3が容器天板内壁面の面位置に位置するように配設した以外は容器Aと同様の容器を用いた。
水素ボンベ、流量制御装置、上記の担体担持有機金属化合物を充填した有機金属化合物供給容器、ガス濃度計、トリメチルインジウム捕集用深冷トラップ、圧力制御装置および真空ポンプをこの順序に接続した(図示せず)。
供給容器は恒温槽に入れ、25℃に保持した。ガス濃度計としてエピソン濃度計(トーマス スワン サイエンティフィック イクイップメント社製)を用いた。
担体担持有機金属化合物を充填した容器Aについて、キャリアガス導入管から水素ガスを900ml/分(大気圧換算)で供給し、トリメチルインジウムを気化させ、ガス濃度計でトリメチルインジウム濃度を測定した。
実験2
担体担持有機金属化合物を充填した容器Bについて、キャリアガス導入管から水素ガスを900ml/分(大気圧換算)で供給し、実験1と同様にトリメチルインジウム濃度を測定した。
実験3
担体担持有機金属化合物を充填した容器Bについて、キャリアガス導入管から水素ガスを600ml/分(大気圧換算)で供給し、実験例1と同様にトリメチルインジウム濃度を測定した。
各実験の測定結果より、使用率(一定濃度のトリメチルインジウムガスが得られる間に気化したトリメチルインジウムの総重量の容器へのトリメチルインジウム充填量に対する比率)の比(実験1を基準)を求めた。その結果を表1に示す。
2 キャリアガス導入管
3 キャリアガス導入管の先端部
3’邪魔板
4 キャリアガス導出管
5 キャリアガス導出管の先端部
6 担体担持有機金属化合物
7 容器の天板
Claims (3)
- 容器上部にキャリアガス導入管の先端部、容器底部にキャリアガス導出管の先端部を配設し、かつ該容器内に有機金属化合物に対して不活性な担体に常温で固体の有機金属化合物を被覆した担体担持有機金属化合物を充填してなる有機金属化合物供給容器において、キャリアガス導入管の先端部より供給されるキャリアガスが、容器を垂直に設置した場合、その中心軸に対し略垂直方向に噴出するように、キャリアガス導入管の先端部を構成してなる有機金属化合物供給容器。
- キャリアガス導入管の先端部からの噴出角度が、容器中心軸に対し90°±5°であることを特徴とする請求項1記載の有機金属化合物供給容器。
- 有機金属化合物がトリメチルインジウムであることを特徴とする請求項1〜2のいずれかに記載の有機金属化合物供給容器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225595A JP5050739B2 (ja) | 2007-08-31 | 2007-08-31 | 有機金属化合物供給容器 |
KR1020080083293A KR20090023166A (ko) | 2007-08-31 | 2008-08-26 | 유기 금속 화합물 공급 용기 |
TW097132869A TW200920490A (en) | 2007-08-31 | 2008-08-28 | A vessel for providing organometallic compound |
CNA2008102149354A CN101376967A (zh) | 2007-08-31 | 2008-08-29 | 有机金属化合物供给容器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225595A JP5050739B2 (ja) | 2007-08-31 | 2007-08-31 | 有機金属化合物供給容器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009059871A true JP2009059871A (ja) | 2009-03-19 |
JP5050739B2 JP5050739B2 (ja) | 2012-10-17 |
Family
ID=40420702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007225595A Expired - Fee Related JP5050739B2 (ja) | 2007-08-31 | 2007-08-31 | 有機金属化合物供給容器 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5050739B2 (ja) |
KR (1) | KR20090023166A (ja) |
CN (1) | CN101376967A (ja) |
TW (1) | TW200920490A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013018265A1 (ja) * | 2011-08-01 | 2013-02-07 | 株式会社フジキン | 原料気化供給装置 |
WO2013147491A1 (ko) * | 2012-03-28 | 2013-10-03 | 주식회사 유니텍스 | 소스 컨테이너 및 기상 증착용 반응로 |
US9494947B2 (en) | 2011-05-10 | 2016-11-15 | Fujikin Incorporated | Pressure type flow control system with flow monitoring |
US9556518B2 (en) | 2011-07-08 | 2017-01-31 | Fujikin Incorporated | Raw material gas supply apparatus for semiconductor manufacturing equipment |
US9631777B2 (en) | 2011-09-06 | 2017-04-25 | Fujikin Incorporated | Raw material vaporizing and supplying apparatus equipped with raw material concentration |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007139159A1 (ja) * | 2006-05-30 | 2007-12-06 | Ube Industries, Ltd. | 有機金属化合物の供給装置 |
-
2007
- 2007-08-31 JP JP2007225595A patent/JP5050739B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-26 KR KR1020080083293A patent/KR20090023166A/ko not_active Application Discontinuation
- 2008-08-28 TW TW097132869A patent/TW200920490A/zh unknown
- 2008-08-29 CN CNA2008102149354A patent/CN101376967A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007139159A1 (ja) * | 2006-05-30 | 2007-12-06 | Ube Industries, Ltd. | 有機金属化合物の供給装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9632511B2 (en) | 2011-05-10 | 2017-04-25 | Fujikin Incorporated | Pressure type flow control system with flow monitoring, and method for detecting anomaly in fluid supply system and handling method at abnormal monitoring flow rate using the same |
US9494947B2 (en) | 2011-05-10 | 2016-11-15 | Fujikin Incorporated | Pressure type flow control system with flow monitoring |
US9870006B2 (en) | 2011-05-10 | 2018-01-16 | Fujikin Incorporated | Pressure type flow control system with flow monitoring |
US10386861B2 (en) | 2011-05-10 | 2019-08-20 | Fujikin Incorporated | Pressure type flow control system with flow monitoring, and method for detecting anomaly in fluid supply system and handling method at abnormal monitoring flow rate using the same |
US9556518B2 (en) | 2011-07-08 | 2017-01-31 | Fujikin Incorporated | Raw material gas supply apparatus for semiconductor manufacturing equipment |
JP2013033782A (ja) * | 2011-08-01 | 2013-02-14 | Fujikin Inc | 原料気化供給装置 |
CN103718275A (zh) * | 2011-08-01 | 2014-04-09 | 株式会社富士金 | 原料气化供给装置 |
KR101513517B1 (ko) * | 2011-08-01 | 2015-04-20 | 가부시키가이샤 후지킨 | 원료 기화 공급 장치 |
WO2013018265A1 (ja) * | 2011-08-01 | 2013-02-07 | 株式会社フジキン | 原料気化供給装置 |
US9631777B2 (en) | 2011-09-06 | 2017-04-25 | Fujikin Incorporated | Raw material vaporizing and supplying apparatus equipped with raw material concentration |
WO2013147491A1 (ko) * | 2012-03-28 | 2013-10-03 | 주식회사 유니텍스 | 소스 컨테이너 및 기상 증착용 반응로 |
KR101389011B1 (ko) | 2012-03-28 | 2014-04-24 | 주식회사 유니텍스 | 소스 컨테이너 및 기상 증착용 반응로 |
US10066295B2 (en) | 2012-03-28 | 2018-09-04 | Unitex Co., Ltd. | Source container and vapour-deposition reactor |
Also Published As
Publication number | Publication date |
---|---|
CN101376967A (zh) | 2009-03-04 |
TW200920490A (en) | 2009-05-16 |
JP5050739B2 (ja) | 2012-10-17 |
KR20090023166A (ko) | 2009-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5257197B2 (ja) | 有機金属化合物供給装置 | |
JP5438142B2 (ja) | 供給装置 | |
JP5050739B2 (ja) | 有機金属化合物供給容器 | |
JP5209899B2 (ja) | デリバリーデバイス | |
JP2651530B2 (ja) | 気相成長用有機金属化合物供給装置 | |
US8758515B2 (en) | Delivery device and method of use thereof | |
JP4710481B2 (ja) | 有機金属化合物供給容器 | |
US9328431B2 (en) | Apparatus for manufacturing a silicon carbide single crystal comprising a mounting portion and a purge gas introduction system | |
JP6867637B2 (ja) | サセプタ | |
JP5163076B2 (ja) | 有機金属化合物供給装置 | |
JP5045062B2 (ja) | 固体有機金属化合物の供給方法 | |
JP3563083B2 (ja) | 超微粒子のガスデポジション方法及び装置 | |
JP5262083B2 (ja) | 固体有機金属化合物の供給装置 | |
JP2007277703A (ja) | 気相成長用担体担持有機金属化合物及びその製法、並びに当該化合物を充填した気相成長用有機金属化合物充填装置 | |
JP4941475B2 (ja) | 炭化珪素単結晶の製造方法およびそれに適した製造装置 | |
JPH0620951A (ja) | 有機金属気化用容器 | |
JP2013127121A (ja) | 気相成長用担体担持有機金属化合物及びその製法、並びに当該化合物を充填した気相成長用有機金属化合物充填装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100804 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120316 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120410 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120608 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120626 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120709 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |