JP2009054991A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009054991A5 JP2009054991A5 JP2008145684A JP2008145684A JP2009054991A5 JP 2009054991 A5 JP2009054991 A5 JP 2009054991A5 JP 2008145684 A JP2008145684 A JP 2008145684A JP 2008145684 A JP2008145684 A JP 2008145684A JP 2009054991 A5 JP2009054991 A5 JP 2009054991A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- microwave
- substrate
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008145684A JP4970354B2 (ja) | 2007-06-05 | 2008-06-03 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007149790 | 2007-06-05 | ||
| JP2007149790 | 2007-06-05 | ||
| JP2007196781 | 2007-07-27 | ||
| JP2007196781 | 2007-07-27 | ||
| JP2008145684A JP4970354B2 (ja) | 2007-06-05 | 2008-06-03 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009054991A JP2009054991A (ja) | 2009-03-12 |
| JP2009054991A5 true JP2009054991A5 (https=) | 2011-06-02 |
| JP4970354B2 JP4970354B2 (ja) | 2012-07-04 |
Family
ID=40221800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008145684A Active JP4970354B2 (ja) | 2007-06-05 | 2008-06-03 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8809203B2 (https=) |
| JP (1) | JP4970354B2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855153B2 (en) * | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20100020382A1 (en) * | 2008-07-22 | 2010-01-28 | Qualcomm Mems Technologies, Inc. | Spacer for mems device |
| CN102598280B (zh) | 2009-10-21 | 2016-05-18 | 株式会社半导体能源研究所 | 液晶显示器件及包括该液晶显示器件的电子设备 |
| WO2011081010A1 (en) * | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| WO2011081011A1 (en) * | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
| WO2011081041A1 (en) | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| KR101842865B1 (ko) * | 2009-12-28 | 2018-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
| KR102008754B1 (ko) | 2010-01-24 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치와 이의 제조 방법 |
| US8879010B2 (en) | 2010-01-24 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9000438B2 (en) | 2010-02-26 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN102213854B (zh) | 2010-04-09 | 2015-08-05 | 株式会社半导体能源研究所 | 液晶显示装置及电子设备 |
| JP5852793B2 (ja) | 2010-05-21 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| WO2011145484A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8895435B2 (en) * | 2011-01-31 | 2014-11-25 | United Microelectronics Corp. | Polysilicon layer and method of forming the same |
| JP5927027B2 (ja) | 2011-10-05 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
| KR102679509B1 (ko) | 2012-09-13 | 2024-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101892433B1 (ko) * | 2012-12-31 | 2018-08-30 | 생-고뱅 퍼포먼스 플라스틱스 코포레이션 | 유연성 기재 상의 박막 규소질화물 장벽 층들 |
| KR102068093B1 (ko) * | 2013-11-04 | 2020-01-20 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 제조 방법 |
| TWI642742B (zh) * | 2015-11-24 | 2018-12-01 | 三星Ｓｄｉ股份有限公司 | 偏光板用黏著膜、包括其的偏光板及光學顯示器 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
| US5134965A (en) | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
| JP3053105B2 (ja) | 1989-06-30 | 2000-06-19 | 株式会社日立製作所 | プラズマｃｖｄ装置及びその方法 |
| JP3593363B2 (ja) | 1994-08-10 | 2004-11-24 | 株式会社東芝 | 半導体薄膜を具備するアクティブマトリックス型液晶表示装置の製造方法 |
| JP2701775B2 (ja) | 1995-03-17 | 1998-01-21 | 日本電気株式会社 | プラズマ処理装置 |
| KR100226366B1 (ko) * | 1995-08-23 | 1999-10-15 | 아끼구사 나오유끼 | 플라즈마장치 및 플라즈마 처리방법 |
| JP3400293B2 (ja) | 1996-05-01 | 2003-04-28 | 株式会社東芝 | Ｃｖｄ装置及びそのクリーニング方法 |
| JP3601988B2 (ja) | 1999-01-04 | 2004-12-15 | 株式会社東芝 | 絶縁膜の形成方法 |
| JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7465478B2 (en) * | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| JP2002158218A (ja) | 2000-11-21 | 2002-05-31 | Toshiba Corp | 成膜方法 |
| TW546857B (en) * | 2001-07-03 | 2003-08-11 | Semiconductor Energy Lab | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| US6489238B1 (en) | 2001-08-21 | 2002-12-03 | Texas Instruments Incorporated | Method to reduce photoresist contamination from silicon carbide films |
| US6995053B2 (en) | 2004-04-23 | 2006-02-07 | Sharp Laboratories Of America, Inc. | Vertical thin film transistor |
| JP2004296963A (ja) | 2003-03-28 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| US7520790B2 (en) * | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
| JP2006013361A (ja) | 2004-06-29 | 2006-01-12 | Advanced Lcd Technologies Development Center Co Ltd | 絶縁膜の形成方法およびプラズマ成膜装置 |
| TW200537695A (en) | 2004-03-19 | 2005-11-16 | Adv Lcd Tech Dev Ct Co Ltd | Insulating film forming method, insulating film forming apparatus, and plasma film forming apparatus |
| US20050238816A1 (en) | 2004-04-23 | 2005-10-27 | Li Hou | Method and apparatus of depositing low temperature inorganic films on plastic substrates |
| JP4720266B2 (ja) | 2005-04-08 | 2011-07-13 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及びコンピュータプログラム |
| US7465674B2 (en) * | 2005-05-31 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2008
- 2008-05-30 US US12/130,307 patent/US8809203B2/en not_active Expired - Fee Related
- 2008-06-03 JP JP2008145684A patent/JP4970354B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009054991A5 (https=) | ||
| TWI713116B (zh) | 圖案化低介電常數介電膜之方法 | |
| TW493244B (en) | Semiconductor device and method of manufacturing the same | |
| CN101690420B (zh) | 氮化硼和氮化硼导出材料的沉积方法 | |
| KR102853014B1 (ko) | 플라즈마 원자 층 증착을 제공하는 방법 | |
| KR101336366B1 (ko) | 실리콘계 박막 및 실리콘계 박막의 형성 방법 | |
| US20160365245A1 (en) | Method for filling gaps of semiconductor device and semiconductor device formed by the same | |
| KR102655396B1 (ko) | 고품질 얇은 필름들을 형성하기 위한 사이클식 순차 프로세스들 | |
| WO2017023693A8 (en) | Compositions and methods for depositing silicon nitride films | |
| WO2012008409A1 (ja) | エッチング方法 | |
| JP2017195367A5 (ja) | フレキシブルデバイスの作製方法 | |
| JP2011097029A5 (https=) | ||
| JP2009290026A (ja) | 中性粒子を用いた半導体装置の成膜方法 | |
| JP2016192483A5 (https=) | ||
| JP2011238900A5 (https=) | ||
| TW202025233A (zh) | 針對芯部移除製程使用熱分解材料縮減開槽的方法 | |
| WO2012033305A8 (ko) | 반도체 소자의 제조 방법 | |
| JP5075897B2 (ja) | 半導体装置の製造方法 | |
| KR102616699B1 (ko) | 갭 충진 애플리케이션들에서 실리콘 다이옥사이드 막의 원자층 증착에서의 심들을 제거하기 위한 시스템들 및 방법들 | |
| JP2014199795A (ja) | 有機デバイスの製造方法、有機デバイスの製造装置及び有機デバイス | |
| CN102915953A (zh) | 无定形碳膜的处理方法，开口的形成方法 | |
| WO2010038887A1 (ja) | 二酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置 | |
| KR20230048108A (ko) | 저응력 붕소 함유 층들의 증착 | |
| CN103117201B (zh) | Pecvd装置及半导体器件的形成方法 | |
| CN104201101A (zh) | 一种双接触孔刻蚀停止层的制作方法 |