JP2009049443A5 - - Google Patents
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- Publication number
- JP2009049443A5 JP2009049443A5 JP2008309986A JP2008309986A JP2009049443A5 JP 2009049443 A5 JP2009049443 A5 JP 2009049443A5 JP 2008309986 A JP2008309986 A JP 2008309986A JP 2008309986 A JP2008309986 A JP 2008309986A JP 2009049443 A5 JP2009049443 A5 JP 2009049443A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- surface side
- silicon
- silicon substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 13
- 238000002161 passivation Methods 0.000 claims 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 238000009792 diffusion process Methods 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000001681 protective effect Effects 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008309986A JP5004932B2 (ja) | 2008-12-04 | 2008-12-04 | 太陽電池および太陽電池の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008309986A JP5004932B2 (ja) | 2008-12-04 | 2008-12-04 | 太陽電池および太陽電池の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004312140A Division JP4540447B2 (ja) | 2004-10-27 | 2004-10-27 | 太陽電池および太陽電池の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009049443A JP2009049443A (ja) | 2009-03-05 |
| JP2009049443A5 true JP2009049443A5 (enExample) | 2009-04-16 |
| JP5004932B2 JP5004932B2 (ja) | 2012-08-22 |
Family
ID=40501302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008309986A Expired - Fee Related JP5004932B2 (ja) | 2008-12-04 | 2008-12-04 | 太陽電池および太陽電池の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5004932B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2409331A4 (en) * | 2009-03-20 | 2017-06-28 | Intevac, Inc. | Advanced high efficiency crystalline solar cell fabrication method |
| DE102009025977A1 (de) | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
| WO2010151478A1 (en) * | 2009-06-22 | 2010-12-29 | International Business Machines Corporation | Method of making a semiconductor optical detector structure |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| WO2013070978A2 (en) | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Substrate processing system and method |
| TWI570745B (zh) | 2012-12-19 | 2017-02-11 | 因特瓦克公司 | 用於電漿離子植入之柵極 |
| CN115036375B (zh) * | 2021-02-23 | 2023-03-24 | 浙江晶科能源有限公司 | 太阳能电池及其制作方法、太阳能组件 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2989923B2 (ja) * | 1991-03-25 | 1999-12-13 | 京セラ株式会社 | 太陽電池素子 |
| JP2002057352A (ja) * | 2000-06-02 | 2002-02-22 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
| JP2002164556A (ja) * | 2000-11-27 | 2002-06-07 | Kyocera Corp | 裏面電極型太陽電池素子 |
| JP2002270879A (ja) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | 半導体装置 |
| JP2004039751A (ja) * | 2002-07-01 | 2004-02-05 | Toyota Motor Corp | 光起電力素子 |
| JP2004047776A (ja) * | 2002-07-12 | 2004-02-12 | Honda Motor Co Ltd | 太陽電池セルおよびその製造方法 |
| JP2004128438A (ja) * | 2002-08-01 | 2004-04-22 | Sharp Corp | 半導体デバイスおよびその製造方法 |
| JP4540447B2 (ja) * | 2004-10-27 | 2010-09-08 | シャープ株式会社 | 太陽電池および太陽電池の製造方法 |
-
2008
- 2008-12-04 JP JP2008309986A patent/JP5004932B2/ja not_active Expired - Fee Related
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