JP2009046373A - 圧電/電歪体、その製造方法、及び圧電/電歪素子 - Google Patents
圧電/電歪体、その製造方法、及び圧電/電歪素子 Download PDFInfo
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Abstract
【解決手段】組成式ABO3で表される母相と、その母相に少なくとも正方晶の結晶構造を有する組成式ABO3で表される母相とは異なる添加材相を含んだ圧電/電歪体である。例えば、ニオブ酸アルカリ系の母相を形成する母材に、添加材相を形成する添加材として正方晶のニオブ酸アルカリ系のものやBaTiO3、PZT、PbTiO3、(Bi0.5,Na0.5)TiO3を添加して形成する。添加材の添加量は、母材に対する体積比で5Vol%以上30Vol%以下(Mnが添加された組成を有する添加材を用いる場合、5Vol%以上45Vol%以下)である。
【選択図】図2
Description
組成式:{Liy(Na1−xKx)1−y}a(Nb1−zTaz)O3
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、及び0.05≦z≦0.50)
で表されるものを採用することができる。
組成式:{Liy(Na1−xKx)1−y}a(Nb1−zTaz)O3
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、及び0.05≦z≦0.50)
で表されるものを採用することができる。
組成式:{Liy(Na1−xKx)1−y}a(Nb1−z−wTazMnw)O3
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、0.05≦z≦0.50、及び0.0001≦w≦0.03)
で表されるものを採用することもできる。
{Liy(Na1−xKx)1−y}a(Nb1−zTaz)O3 (1)
(但し、前記組成式(1)中、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、及び0.05≦z≦0.50である)
なお、前記組成式(1)のaの範囲は、1.00<a≦1.20であることが好ましく、より好ましくは1.00<a≦1.10である。
{Liy(Na1−xKx)1−y}a(Nb1−zTaz)O3 (2)
(但し、前記組成式(2)中、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、及び0.05≦z≦0.50)
なお、前記組成式(2)のaの範囲は、1.00<a≦1.20であることが好ましく、より好ましくは1.00<a≦1.10である。
組成式:{Liy(Na1−xKx)1−y}a(Nb1−z−wTazMnw)O3 (3)
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、0.05≦z≦0.50、及び0.0001≦w≦0.03)
所定量の炭酸リチウム(Li2CO3)、酒石酸ナトリウム(C4H5O6Na・H2O)、酒石酸カリウム(C4H5O6K)、酸化ニオブ(Nb2O5)、及び酸化タンタル(Ta2O5)を、エタノール(エチルアルコール)中で16時間混合して混合物を調製した。得られた混合物を、乾燥した後、800℃で仮焼した。次に、再びボールミルを用いて同様に粉砕、仮焼を行い、粗粉砕した後に500メッシュのふるいを通して粒度調整を行った。このときの母材原料粉末の平均粒径は0.4〜0.5μm、添加材原料粉末の平均粒径も0.4〜0.5μmとした。そして添加材原料粉末を1050℃の温度で粒成長させ、その後粗粉砕し、分級器により平均粒径を1〜2μmとした。
所定量の炭酸リチウム(Li2CO3)、酒石酸ナトリウム(C4H5O6Na・H2O)、酒石酸カリウム(C4H5O6K)、酸化ニオブ(Nb2O5)、及び酸化タンタル(Ta2O5)を、エタノール(エチルアルコール)中で16時間混合して混合物を調製した。得られた混合物を、乾燥した後、800℃で仮焼した。次に、再びボールミルを用いて同様に粉砕、仮焼を行い、粗粉砕した後に500メッシュのふるいを通して粒度調整を行った。このときの母材原料粉末の平均粒径は0.4〜0.5μm、添加材原料粉末の平均粒径も0.4〜0.5μmとした。
実施例1と同様に、母材及び添加材の原料粉末は一般的な固相法により作製した。出発原料として、炭酸リチウム(Li2CO3)、酒石酸ナトリウム(C4H5O6Na・H2O)、酒石酸カリウム(C4H5O6K)、酸化ニオブ(Nb2O5)、酸化タンタル(Ta2O5)、炭酸マンガン(MnCO3)をそれぞれの組成となるように秤量した。ボールミルを用いて16時間アルコール中で混合し、得られた混合物を乾燥した後、800℃の温度で仮焼した。次に、再び粉砕、仮焼を行い、粗粉砕した後に粒度調整を行った。このときの母材原料粉末の平均粒径は0.4〜0.5μm、添加材原料粉末の平均粒径も0.4〜0.5μmであった。添加材原料粉末は1000℃の温度で粒成長させ、その後粗粉砕し、分級器により平均粒径を1〜2μmとした。
加工した焼結体の両面にAuをスパッタし、5kV/mmの電圧を15分印加して分極処理を行った。その後、片面に歪ゲージを接着剤で貼り付けて4kV/mmの電圧を印加して歪率(ppm)を測定した。残留歪は未分極試料を歪測定することで求めた。
比較例2は、実施例2と同様に試料を作製した。ただし、添加材原料の平均粒径を0.4〜0.5μmとして混合した。実施例2及び比較例2の試料の4kV/mm印加時の歪率を表3及び図5に示す。
Claims (10)
- 組成式ABO3(Aは、Li、Na、Kから選択される1つ以上の元素、Bは、Nb、Ta、Sbから選択される1つ以上の元素)で表される母相と、
少なくとも正方晶の結晶構造を有する組成式ABO3(Aは、Li、Na、Kから選択される1つ以上の元素、Bは、Nb、Ta、Sb、Mnから選択される1つ以上の元素)で表される前記母相とは組成が異なる添加材相とを含む圧電/電歪体。 - 前記母相は、
組成式:{Liy(Na1−xKx)1−y}a(Nb1−zTaz)O3
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、及び0.05≦z≦0.50)
で表される請求項1に記載の圧電/電歪体。 - 前記添加材相は、
組成式:{Liy(Na1−xKx)1−y}a(Nb1−zTaz)O3
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、及び0.05≦z≦0.50)
で表される請求項1または2に記載の圧電/電歪体。 - 前記添加材相は、
組成式:{Liy(Na1−xKx)1−y}a(Nb1−z−wTazMnw)O3
(但し、0.90≦a≦1.20、0.20≦x≦0.80、0.02≦y≦0.20、0.05≦z≦0.50、及び0.0001≦w≦0.03)
で表される請求項1または2に記載の圧電/電歪体。 - 請求項1ないし4のいずれか1項に記載の圧電/電歪体と、
その圧電/電歪体に配設された電極部と、
を含む圧電/電歪素子。 - 請求項3に記載の圧電/電歪体の製造方法であって、前記添加材相を形成する原料粉末を、前記母相を形成する原料粉末に対して体積比で5Vol%以上30Vol%以下で混合し、焼成する圧電/電歪体の製造方法。
- 請求項4に記載の圧電/電歪体の製造方法であって、前記添加材相を形成する原料粉末を、前記母相を形成する原料粉末に対して体積比で5Vol%以上45Vol%以下で混合し、焼成する圧電/電歪体の製造方法。
- 前記母相を形成する前記原料粉末に、前記母相を形成する前記原料粉末よりも平均粒径が大きい前記添加材相を形成する前記原料粉末を混合し、焼成する請求項6または7に記載の圧電/電歪体の製造方法。
- 前記添加材相を形成する平均粒径が0.5μm以上10μm以下である前記原料粉末を、前記母相を形成する前記原料粉末に加えて焼成する請求項6ないし8のいずれか1項に記載の圧電/電歪体の製造方法。
- 前記母相を形成する平均粒径が0.1μm以上1μm以下である前記原料粉末に、前記添加材相を形成する前記原料粉末を加えて焼成する請求項6ないし9のいずれか1項に記載の圧電/電歪体の製造方法。
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Cited By (6)
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JP2009132598A (ja) * | 2007-11-08 | 2009-06-18 | Ngk Insulators Ltd | 圧電/電歪体、及び圧電/電歪素子 |
JP2011032157A (ja) * | 2009-07-10 | 2011-02-17 | Ngk Insulators Ltd | 圧電/電歪セラミックス焼結体 |
JP2011144100A (ja) * | 2009-12-14 | 2011-07-28 | Ngk Insulators Ltd | 圧電/電歪セラミックス焼結体 |
JP2011144101A (ja) * | 2009-12-14 | 2011-07-28 | Ngk Insulators Ltd | 圧電/電歪セラミックス焼結体 |
JP2013219250A (ja) * | 2012-04-10 | 2013-10-24 | Murata Mfg Co Ltd | 圧電セラミック電子部品、及び該圧電セラミック電子部品の製造方法 |
JP2016528151A (ja) * | 2013-08-07 | 2016-09-15 | ピーアイ セラミック ゲーエムベーハー | 鉛含有量が低減された圧電セラミック材料 |
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US7911117B2 (en) * | 2007-11-08 | 2011-03-22 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive body, and piezoelectric/electrostrictive element |
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JP2009132598A (ja) * | 2007-11-08 | 2009-06-18 | Ngk Insulators Ltd | 圧電/電歪体、及び圧電/電歪素子 |
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JP2013219250A (ja) * | 2012-04-10 | 2013-10-24 | Murata Mfg Co Ltd | 圧電セラミック電子部品、及び該圧電セラミック電子部品の製造方法 |
JP2016528151A (ja) * | 2013-08-07 | 2016-09-15 | ピーアイ セラミック ゲーエムベーハー | 鉛含有量が低減された圧電セラミック材料 |
JP2019055908A (ja) * | 2013-08-07 | 2019-04-11 | ピーアイ セラミック ゲーエムベーハー | 鉛含有量が低減された圧電セラミック材料 |
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