JP2009044194A - 多層メタル線を有する薄膜構造 - Google Patents
多層メタル線を有する薄膜構造 Download PDFInfo
- Publication number
- JP2009044194A JP2009044194A JP2008290125A JP2008290125A JP2009044194A JP 2009044194 A JP2009044194 A JP 2009044194A JP 2008290125 A JP2008290125 A JP 2008290125A JP 2008290125 A JP2008290125 A JP 2008290125A JP 2009044194 A JP2009044194 A JP 2009044194A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- layers
- base metal
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/12743—Next to refractory [Group IVB, VB, or VIB] metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
Abstract
【解決手段】薄膜構造50は、基板52と、ベースメタル層54及びバリアメタル層56の複数の交互層とを備え、複数の層は、ベースメタルの各層が最大温度に対する臨界厚みよりも薄くかつバリアメタル層56がベースメタル層54の二つの層の間に挿入されるように、基板52上に支持され、メタル層の抵抗率を小さくすることなくメタル層におけるヒロックを阻止する。
【選択図】図4
Description
キャッピングがヒロックスの形成を成功裏に回避するためには、キャッピング層は、全側面上でアルミニウムを正確に突合わせなければならない。キャッピング・メタルの位置合せ(registration)が正確に行われなかったならば、ヒロックスが形成することが知られている。フォトリソグフィの現在の誤差許容範囲で、キャッピング・メタルの追加の厚みは、全線幅のかなり大きな割合いを消費する。キャッピング・メタルは、一般にアルミニウムのような良好な導体ではないでので、キャップドメタル線の抵抗率は、同じ幅のアルミニウムの線に対するよりも大きい。
本発明は、ベースメタルとバリアメタルの交互層を備えている新規の多層構造である。ベースメタルは、所与の層において、それを越えるとヒロックスが所与の温度に対して形成されやすい、ヒロック形成に対するその臨界厚みよりも少ない厚みに被着される。ベースメタルの各そのような層の間に、バリアメタルの層が挿入される。バリアメタルの介在層(intervening layer) は、ベースメタルを互いに隔離すべく作用する。各層は、臨界厚み下であるので、ヒロックスが形成されない。
52 基板
54 ベースメタル
56 バリアメタル
Claims (2)
- 製造工程によって組み立てられる薄膜構造であって、
基板と、
ベースメタル及びバリアメタルの複数の交互層とを備え、
前記複数の層は、前記基板上に支持され、前記ベースメタルの各層は、アルミニウムで構成され、ヒロック・フリーでありかつ800Å(オングストローム)以下の厚みを有し、前記バリアメタルの層は、前記ベースメタルの二つの層の間に挿入され、
前記バリアメタルは、高融点メタル合金を備えている、
ことを特徴とする薄膜構造。 - 製造工程によって組み立てられる薄膜構造であって、
基板と、
ベースメタル及びバリアメタルの複数の交互層とを備え、
前記複数の層は、前記基板上に支持され、前記ベースメタルの各層は、アルミニウムで構成され、ヒロック・フリーでありかつ800Å(オングストローム)以下の厚みを有し、前記バリアメタルの層は、前記ベースメタルの二つの層の間に挿入され、
前記バリアメタルは、複数のメタルの合金を備え、前記複数のメタルの少なくとも一つは、クロム、モリブデン、タンタル、及びタングステンから構成されている一群から選択される、
ことを特徴とする薄膜構造。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/234,897 US5518805A (en) | 1994-04-28 | 1994-04-28 | Hillock-free multilayer metal lines for high performance thin film structures |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9523195A Division JPH07302792A (ja) | 1994-04-28 | 1995-04-20 | 高性能薄膜構造用ヒロック・フリー多層メタル線 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009044194A true JP2009044194A (ja) | 2009-02-26 |
Family
ID=22883263
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9523195A Pending JPH07302792A (ja) | 1994-04-28 | 1995-04-20 | 高性能薄膜構造用ヒロック・フリー多層メタル線 |
JP2008290125A Pending JP2009044194A (ja) | 1994-04-28 | 2008-11-12 | 多層メタル線を有する薄膜構造 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9523195A Pending JPH07302792A (ja) | 1994-04-28 | 1995-04-20 | 高性能薄膜構造用ヒロック・フリー多層メタル線 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5518805A (ja) |
EP (1) | EP0681328B1 (ja) |
JP (2) | JPH07302792A (ja) |
DE (1) | DE69525100T2 (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5693983A (en) * | 1994-04-28 | 1997-12-02 | Xerox Corporation | Thin-film structure with conductive molybdenum-chromium line |
JPH0843860A (ja) * | 1994-04-28 | 1996-02-16 | Xerox Corp | 低電圧駆動アクティブ・マトリックス液晶ディスプレイにおける電気的に分離されたピクセル・エレメント |
JP3403812B2 (ja) * | 1994-05-31 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタを用いた半導体装置の作製方法 |
US5608557A (en) * | 1995-01-03 | 1997-03-04 | Xerox Corporation | Circuitry with gate line crossing semiconductor line at two or more channels |
US5693567A (en) * | 1995-06-07 | 1997-12-02 | Xerox Corporation | Separately etching insulating layer for contacts within array and for peripheral pads |
US5648674A (en) * | 1995-06-07 | 1997-07-15 | Xerox Corporation | Array circuitry with conductive lines, contact leads, and storage capacitor electrode all formed in layer that includes highly conductive metal |
US5731216A (en) * | 1996-03-27 | 1998-03-24 | Image Quest Technologies, Inc. | Method of making an active matrix display incorporating an improved TFT |
JPH10163501A (ja) * | 1996-11-29 | 1998-06-19 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型トランジスタ |
FR2756572B1 (fr) | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
KR100229613B1 (ko) * | 1996-12-30 | 1999-11-15 | 구자홍 | 액정 표시 장치 및 제조 방법 |
US6154188A (en) * | 1997-04-30 | 2000-11-28 | Candescent Technologies Corporation | Integrated metallization for displays |
US5969423A (en) * | 1997-07-15 | 1999-10-19 | Micron Technology, Inc. | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition |
US6222271B1 (en) | 1997-07-15 | 2001-04-24 | Micron Technology, Inc. | Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
US6149792A (en) * | 1997-09-30 | 2000-11-21 | Candescent Technologies Corporation | Row electrode anodization |
JPH11265938A (ja) * | 1998-03-18 | 1999-09-28 | Toshiba Corp | 半導体装置及びその製造方法 |
US6057238A (en) * | 1998-03-20 | 2000-05-02 | Micron Technology, Inc. | Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
US6396147B1 (en) | 1998-05-16 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal-oxide conductors |
US6380627B1 (en) * | 1998-06-26 | 2002-04-30 | The Regents Of The University Of California | Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication |
KR100361570B1 (ko) * | 1999-12-23 | 2002-11-21 | 아남반도체 주식회사 | 반사형 마이크로 액정 표시 장치용 기판 제조 방법 |
US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
KR100507343B1 (ko) * | 2001-11-28 | 2005-08-08 | 삼성에스디아이 주식회사 | 박막트랜지스터용 금속배선구조 및 그의 형성방법 |
US7723228B2 (en) * | 2003-05-20 | 2010-05-25 | Applied Materials, Inc. | Reduction of hillocks prior to dielectric barrier deposition in Cu damascene |
US7371427B2 (en) * | 2003-05-20 | 2008-05-13 | Applied Materials, Inc. | Reduction of hillocks prior to dielectric barrier deposition in Cu damascene |
JP4729661B2 (ja) * | 2003-07-11 | 2011-07-20 | 奇美電子股▲ふん▼有限公司 | ヒロックが無いアルミニウム層及びその形成方法 |
DE102004036140A1 (de) * | 2004-07-26 | 2006-03-23 | Infineon Technologies Ag | Halbleiterbauelement |
DE102004036142B4 (de) * | 2004-07-26 | 2009-04-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer Metallisierung mit mehreren durch zumindest eine Barriereschicht getrennten Metallisierungsschichten sowie Verfahren zu dessen Herstellung |
US9024327B2 (en) * | 2007-12-14 | 2015-05-05 | Cree, Inc. | Metallization structure for high power microelectronic devices |
US8822336B2 (en) | 2011-06-16 | 2014-09-02 | United Microelectronics Corp. | Through-silicon via forming method |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6329548A (ja) * | 1986-07-09 | 1988-02-08 | シ−メンス、アクチエンゲゼルシヤフト | 集積回路の金属化部 |
JPS6343349A (ja) * | 1986-08-08 | 1988-02-24 | Matsushita Electric Ind Co Ltd | 多層薄膜配線及びその形成方法 |
JPS63155743A (ja) * | 1986-12-19 | 1988-06-28 | Fujitsu Ltd | 半導体装置 |
JPH03222333A (ja) * | 1990-01-26 | 1991-10-01 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4522890A (en) * | 1979-10-31 | 1985-06-11 | Illinois Tool Works Inc. | Multilayer high attenuation shielding structure |
US4673623A (en) * | 1985-05-06 | 1987-06-16 | The Board Of Trustees Of The Leland Stanford Junior University | Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects |
DE3783405T2 (de) * | 1986-08-19 | 1993-08-05 | Fujitsu Ltd | Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben. |
US4980752A (en) * | 1986-12-29 | 1990-12-25 | Inmos Corporation | Transition metal clad interconnect for integrated circuits |
US4910580A (en) * | 1987-08-27 | 1990-03-20 | Siemens Aktiengesellschaft | Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy |
US5071714A (en) * | 1989-04-17 | 1991-12-10 | International Business Machines Corporation | Multilayered intermetallic connection for semiconductor devices |
-
1994
- 1994-04-28 US US08/234,897 patent/US5518805A/en not_active Expired - Lifetime
-
1995
- 1995-04-20 JP JP9523195A patent/JPH07302792A/ja active Pending
- 1995-04-26 EP EP19950302791 patent/EP0681328B1/en not_active Expired - Lifetime
- 1995-04-26 DE DE69525100T patent/DE69525100T2/de not_active Expired - Lifetime
-
2008
- 2008-11-12 JP JP2008290125A patent/JP2009044194A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6329548A (ja) * | 1986-07-09 | 1988-02-08 | シ−メンス、アクチエンゲゼルシヤフト | 集積回路の金属化部 |
JPS6343349A (ja) * | 1986-08-08 | 1988-02-24 | Matsushita Electric Ind Co Ltd | 多層薄膜配線及びその形成方法 |
JPS63155743A (ja) * | 1986-12-19 | 1988-06-28 | Fujitsu Ltd | 半導体装置 |
JPH03222333A (ja) * | 1990-01-26 | 1991-10-01 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH07302792A (ja) | 1995-11-14 |
EP0681328A2 (en) | 1995-11-08 |
DE69525100T2 (de) | 2002-07-18 |
EP0681328B1 (en) | 2002-01-23 |
US5518805A (en) | 1996-05-21 |
EP0681328A3 (en) | 1997-02-12 |
DE69525100D1 (de) | 2002-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009044194A (ja) | 多層メタル線を有する薄膜構造 | |
JP3916334B2 (ja) | 薄膜トランジスタ | |
JP3976770B2 (ja) | 液晶表示装置の製造方法およびtft基板を有する液晶表示装置 | |
US6528357B2 (en) | Method of manufacturing array substrate | |
US7259035B2 (en) | Methods of forming thin-film transistor display devices | |
US7981761B2 (en) | Method of manufacturing semiconductor device having MIM capacitor | |
US7304339B2 (en) | Passivation structure for ferroelectric thin-film devices | |
JP2004157554A (ja) | 液晶表示装置の製造方法 | |
JPH06188419A (ja) | 薄膜トランジスタの製造方法 | |
NO173037B (no) | Fremgangsmaate for aa tilveiebringe passive tynnsjikt-kretser, og en passiv krets fremstilt ved fremgangsmaaten | |
US6140701A (en) | Suppression of hillock formation in thin aluminum films | |
JP4808232B2 (ja) | 金属絶縁体金属キャパシタの製造方法 | |
KR100314865B1 (ko) | 낮은저항알루미늄합금으로형성된도체를갖는기판 | |
KR100208024B1 (ko) | 힐락 억제를 위한 tft의 알루미늄 게이트 구조 및 그 제조방법 | |
JPH04188770A (ja) | 薄膜トランジスタ | |
US20030186074A1 (en) | Metal electrode using molybdenum-tungsten alloy as barrier layers and the fabrication method of the same | |
JP2809153B2 (ja) | 液晶表示装置及びその製造方法 | |
JPH0547708A (ja) | 半導体装置の製造方法 | |
JPH07302893A (ja) | 薄膜構造のメタル層におけるヒロック阻止用双対絶縁キャッピング層 | |
JP2000147550A (ja) | アクティブマトリクス基板 | |
JPH0671082B2 (ja) | 薄膜トランジスタ | |
JP3245613B2 (ja) | 薄膜素子の製造方法 | |
JP3149034B2 (ja) | 薄膜トランジスタ | |
JP3257001B2 (ja) | 多層配線板及び多層配線板の製造方法 | |
JP2017092331A (ja) | デバイス用配線膜、およびAl合金スパッタリングターゲット材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081212 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081212 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090515 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110802 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111101 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111107 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120123 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120228 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20120531 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120531 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120601 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120601 |