JP2009038344A5 - - Google Patents

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Publication number
JP2009038344A5
JP2009038344A5 JP2008146971A JP2008146971A JP2009038344A5 JP 2009038344 A5 JP2009038344 A5 JP 2009038344A5 JP 2008146971 A JP2008146971 A JP 2008146971A JP 2008146971 A JP2008146971 A JP 2008146971A JP 2009038344 A5 JP2009038344 A5 JP 2009038344A5
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Japan
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electronic
optoelectronic device
device structure
nitride substrate
substrate
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JP2008146971A
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Japanese (ja)
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JP2009038344A (ja
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Priority claimed from US11/758,395 external-priority patent/US20080303033A1/en
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Publication of JP2009038344A publication Critical patent/JP2009038344A/ja
Publication of JP2009038344A5 publication Critical patent/JP2009038344A5/ja
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JP2008146971A 2007-06-05 2008-06-04 格子整合基板上への窒化物系光電子/電子デバイス構造体の形成 Pending JP2009038344A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/758,395 US20080303033A1 (en) 2007-06-05 2007-06-05 Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates

Publications (2)

Publication Number Publication Date
JP2009038344A JP2009038344A (ja) 2009-02-19
JP2009038344A5 true JP2009038344A5 (https=) 2012-03-08

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JP2008146971A Pending JP2009038344A (ja) 2007-06-05 2008-06-04 格子整合基板上への窒化物系光電子/電子デバイス構造体の形成

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US (2) US20080303033A1 (https=)
JP (1) JP2009038344A (https=)
DE (1) DE102008026828A1 (https=)

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