JP2009033179A - 半導体デバイスの低温酸化のための方法 - Google Patents

半導体デバイスの低温酸化のための方法 Download PDF

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Publication number
JP2009033179A
JP2009033179A JP2008196682A JP2008196682A JP2009033179A JP 2009033179 A JP2009033179 A JP 2009033179A JP 2008196682 A JP2008196682 A JP 2008196682A JP 2008196682 A JP2008196682 A JP 2008196682A JP 2009033179 A JP2009033179 A JP 2009033179A
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substrate
oxygen
chamber
hydrogen
plasma
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JP2008196682A
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Japanese (ja)
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JP2009033179A5 (https=
Inventor
Thai Cheng Chua
チェン チュア タイ
James P Cruse
ピー． クルーズ ジェームス
Cory Czarnik
クザルニク コリー
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

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  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2008196682A 2007-07-30 2008-07-30 半導体デバイスの低温酸化のための方法 Pending JP2009033179A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/830,140 US7645709B2 (en) 2007-07-30 2007-07-30 Methods for low temperature oxidation of a semiconductor device

Publications (2)

Publication Number Publication Date
JP2009033179A true JP2009033179A (ja) 2009-02-12
JP2009033179A5 JP2009033179A5 (https=) 2011-09-15

Family

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Family Applications (1)

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JP2008196682A Pending JP2009033179A (ja) 2007-07-30 2008-07-30 半導体デバイスの低温酸化のための方法

Country Status (4)

Country Link
US (1) US7645709B2 (https=)
JP (1) JP2009033179A (https=)
KR (2) KR20090013051A (https=)
TW (1) TWI553734B (https=)

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* Cited by examiner, † Cited by third party
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JP2017103476A (ja) * 2017-01-26 2017-06-08 富士通セミコンダクター株式会社 半導体装置の製造方法
KR20180019661A (ko) * 2015-06-18 2018-02-26 오스람 옵토 세미컨덕터스 게엠베하 광전 반도체 소자를 제조하는 방법 및 광전 반도체 소자

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US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
US8481433B2 (en) 2009-03-31 2013-07-09 Applied Materials, Inc. Methods and apparatus for forming nitrogen-containing layers
WO2010117703A2 (en) * 2009-03-31 2010-10-14 Applied Materials, Inc. Method of selective nitridation
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
WO2010147937A2 (en) * 2009-06-15 2010-12-23 Applied Materials, Inc. Enhancing nand flash floating gate performance
WO2011032854A2 (en) * 2009-09-18 2011-03-24 Oerlikon Solar Ag, Truebbach A method for manufacturing a photovoltaic device
US20110189860A1 (en) * 2010-02-02 2011-08-04 Applied Materials, Inc. Methods for nitridation and oxidation
CN102108484B (zh) * 2011-01-18 2012-07-04 厦门建霖工业有限公司 一种双层抗菌镀层的制备方法
US20120326230A1 (en) * 2011-06-22 2012-12-27 International Business Machines Corporation Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
KR102028779B1 (ko) 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
US10020186B2 (en) * 2016-07-29 2018-07-10 Applied Materials, Inc. Silicon germanium selective oxidation process
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
CN108447770B (zh) * 2018-03-08 2020-07-28 清华大学 二氧化硅薄膜的制备方法
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10790183B2 (en) 2018-06-05 2020-09-29 Applied Materials, Inc. Selective oxidation for 3D device isolation
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

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JPS59229887A (ja) * 1983-06-11 1984-12-24 Nippon Telegr & Teleph Corp <Ntt> トンネル型ジヨセフソン接合素子の製法及びそれに使用する装置
JPH06140368A (ja) * 1992-10-28 1994-05-20 Fujitsu Ltd 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置
JP2004095918A (ja) * 2002-08-30 2004-03-25 Fasl Japan Ltd 半導体記憶装置及び半導体装置の製造方法
JP2004349546A (ja) * 2003-05-23 2004-12-09 Tokyo Electron Ltd 酸化膜形成方法、酸化膜形成装置および電子デバイス材料
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KR102508721B1 (ko) 2015-06-18 2023-03-09 에이엠에스-오스람 인터내셔널 게엠베하 광전 반도체 소자를 제조하는 방법 및 광전 반도체 소자
JP2017103476A (ja) * 2017-01-26 2017-06-08 富士通セミコンダクター株式会社 半導体装置の製造方法

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Publication number Publication date
TW200913069A (en) 2009-03-16
KR20110018408A (ko) 2011-02-23
US7645709B2 (en) 2010-01-12
KR20090013051A (ko) 2009-02-04
US20090035952A1 (en) 2009-02-05
TWI553734B (zh) 2016-10-11

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